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Infineon Technologies IRF7342PBF
- Part No.:
- IRF7342PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7342PBF.pdf
- Description:
- MOSFET 2P-CH 55V 3.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,063
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Product details
Overview
IRF7342PBF from Infineon Technologies is a dual P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -55 V VDS, 0.095 Ω typical RDS(on) at -10 V VGS, and -3.4 A continuous drain current at 25°C. It serves as a synchronous rectifier or high-side load switch in DC-DC converters and power management circuits.
For engineers reviewing the IRF7342PBF datasheet, IRF7342PBF pinout, IRF7342PBF application, or IRF7342PBF equivalent, key selection criteria include verified dual P-channel topology, thermal performance on standard PCB (RθJA = 62.5°C/W), avalanche energy rating (114 mJ), and lead-free SO-8 compatibility with vapor-phase and wave soldering.
Technical Context
This dual MOSFET integrates two identical P-channel HEXFET devices in a single SO-8 package with shared source terminals (S1/S2) and independent gate/drain connections - enabling complementary half-bridge or dual independent switching configurations. Its Generation V process delivers ultra-low on-resistance per die area and robust dv/dt immunity (5.0 V/ns).
The device features a body diode with 54–80 ns reverse recovery time and 85–130 nC Qrr, supporting high-frequency synchronous rectification. Gate charge parameters (Qg = 26–38 nC, Qgd = 8.4–13 nC) are optimized for fast turn-on/turn-off (td(on) = 14–22 ns, tf = 22–32 ns) under -10 V gate drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -55 V - Maximum blocking voltage for high-side P-channel switching in ≤48 V systems |
| RDS(on) max | 0.105 Ω @ -10 V VGS, -3.4 A - Enables <110 mW conduction loss at full rated current |
| ID cont | -3.4 A @ TA = 25°C - Sustains continuous load current without derating on standard FR4 PCB |
| PD max | 2.0 W @ TA = 25°C - Supports >0.8 W dissipation in typical PCB mount per manufacturer validation |
| EAS | 114 mJ - Single-pulse avalanche energy allows safe operation during inductive switching transients |
| Qg | 26–38 nC - Total gate charge determines driver strength requirement for <50 ns switching transitions |
| tr/tf | 10–15 ns / 22–32 ns - Fast edge rates reduce switching losses in 300 kHz–1 MHz DC-DC topologies |
Pinout & Package
IRF7342PBF uses an SO-8 surface-mount package with exposed thermal pad (non-electrical), optimized for enhanced thermal dissipation and multiple-die integration. The lead frame is customized to improve thermal resistance and board-level reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 (S1) | Common source terminal for first MOSFET; electrically tied to pins 1–3 for low-inductance return path |
| 4 | Gate 1 (G1) | Independent control input for first P-channel MOSFET; requires negative gate drive relative to S1 |
| 5 | Drain 1 (D1) | High-side output node for first MOSFET; connects to input rail or inductor node in buck converter |
| 6 | Drain 2 (D2) | High-side output node for second MOSFET; enables dual independent switching or paralleled operation |
| 7 | Gate 2 (G2) | Independent control input for second P-channel MOSFET; supports asynchronous or synchronized drive |
| 8, 7, 6 | Source 2 (S2) | Common source terminal for second MOSFET; pins 6–8 form low-impedance S2 connection |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Two matched HEXFETs in one SO-8 footprint reduce board space by >40% vs. discrete solutions |
| Generation V silicon process | Delivers 0.095 Ω RDS(on) at -10 V - 18% lower than prior-gen equivalents at same voltage rating |
| Enhanced thermal lead frame | Enables 2.0 W power dissipation on standard PCB - 25% higher than baseline SO-8 MOSFETs |
| Lead-free and RoHS-compliant | Meets JEDEC MSL1 moisture sensitivity level - suitable for automated reflow without baking |
| Fast body diode recovery | trr = 54–80 ns with Qrr = 85–130 nC - minimizes shoot-through risk in synchronous rectifiers |
Applications
| DC-DC Buck Converter | Hot-Swap Controller |
|---|---|
|
Use Scenario: Primary high-side switch in 12 V–48 V input buck regulators delivering up to 3 A to FPGA or ASIC core rails. IC Role / Device Role / Timing Role: P-channel high-side switch controlling power delivery timing; operates in hard-switched mode at 500 kHz. Use Value: 0.105 Ω RDS(on) limits conduction loss to <1.1 W at 3.4 A, enabling >92% efficiency at full load. |
Use Scenario: Inrush current limiter and fault-isolation switch in 24 V industrial backplane power distribution. IC Role / Device Role / Timing Role: Dual-channel load switch providing independent enable control and overcurrent protection via external sense resistor. Use Value: Matched dual channels allow redundant configuration or split-load operation; avalanche rating handles capacitive load surges. |
| USB-C Power Delivery | Automotive Body Control Module |
|
Use Scenario: Reverse-polarity protection and VBUS switching in 20 V USB PD 3.0 sink applications. IC Role / Device Role / Timing Role: P-channel back-to-back switch ensuring bidirectional blocking and controlled turn-on sequencing. Use Value: -55 V VDS withstands automotive load-dump transients; fast switching reduces transition losses during plug insertion. |
Use Scenario: Window lift motor driver and seat position actuator control in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: Half-bridge high-side switch driving brushed DC motors with PWM duty cycle modulation. Use Value: 114 mJ EAS safely clamps inductive kickback from 50 W motors; SO-8 footprint simplifies layout in space-constrained modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7945DP-T1-GE3 | Lower RDS(on) (0.065 Ω), but only -30 V VDS; higher Qg (42 nC) | Restricted to ≤24 V systems; less suitable for 48 V telecom or industrial inputs | Select when operating voltage ≤24 V and lowest conduction loss is critical |
| DMC3025LSD-13 | Higher VDS (-60 V), but larger SO-8 variant with 0.125 Ω RDS(on) and no avalanche rating | Lacks EAS specification; unsuitable for inductive switching without external snubbing | Select when absolute -60 V rating is required and transient robustness is managed externally |
Compared with Si7945DP and DMC3025LSD, IRF7342PBF uniquely balances -55 V rating, 114 mJ avalanche capability, and 0.105 Ω on-resistance in standard SO-8 - making it optimal for 36–48 V industrial DC-DC and hot-swap designs where reliability under transient stress is mandatory.
Availability
IRF7342PBF is available at Aetrix Electronics and suitable for DC-DC power conversion, hot-swap protection, and USB-C power delivery applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF7342PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification.
IRF7342PBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power switching in industrial, telecom, and consumer power supplies.
FAQ
What is the maximum junction temperature for continuous operation?
The IRF7342PBF has a specified operating junction temperature range of -55°C to +150°C. Continuous operation at 150°C requires strict thermal design: PCB copper area ≥1 in², ambient ≤70°C, and power dissipation limited to ≤1.3 W per the linear derating curve (0.016 W/°C above 70°C).
Can IRF7342PBF be used in synchronous rectification?
Yes - its body diode exhibits 54–80 ns reverse recovery time and 85–130 nC Qrr, enabling effective synchronous rectification in buck converters up to 1 MHz. Gate drive must provide clean negative turn-off to prevent cross-conduction with the low-side N-MOSFET.
Is the SO-8 package thermally enhanced?
Yes - the SO-8 package uses a customized lead frame with increased copper mass and optimized thermal path, achieving 62.5°C/W junction-to-ambient resistance on a 1 in² copper board. This exceeds standard SO-8 thermal performance by ~15%.
Does IRF7342PBF support wave soldering?
Yes - the device is qualified for vapor phase, infrared, and wave soldering per manufacturer specifications. Its lead-free construction (PbF suffix) and MSL1 rating ensure reliable assembly without pre-baking, provided peak temperature does not exceed 260°C for ≤10 seconds.
IRF7342PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 690pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7342PBF FAQ
1.How can I place an order for IRF7342PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7342PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7342PBF reliable?
The price and inventory of IRF7342PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7342PBF is usually 5 days.
3.What payment methods are accepted for IRF7342PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7342PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7342PBF?
IRF7342PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7342PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7342PBF?
For technical support, including IRF7342PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7342PBF requirements.
6.How does Aetrix verify that IRF7342PBF is sourced from the original manufacturer or authorized distributors?
All IRF7342PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7342PBF meets industry standards.
7.What is the process for return or replacement of IRF7342PBF?
All IRF7342PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7342PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7342PBF part is unused and in its original packaging.
Return procedure for IRF7342PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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