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Infineon Technologies IRF7342QTRPBF
- Part No.:
- IRF7342QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7342QTRPBF.pdf
- Description:
- MOSFET 2P-CH 55V 3.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,105
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Product details
Overview
IRF7342QTRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -55 V VDSS, 0.105 Ω RDS(on) at -10 V VGS, and -3.4 A continuous drain current at TC = 25°C. It serves as a compact, surface-mount synchronous rectifier or load switch in DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7342QTRPBF datasheet, IRF7342QTRPBF pinout, IRF7342QTRPBF application, or IRF7342QTRPBF equivalent, key selection criteria include its dual P-channel configuration, -55 V breakdown rating, low gate charge (26–38 nC), fast switching (tr = 10–15 ns), and 150°C junction temperature capability - all critical for high-efficiency, space-constrained power management designs.
Technical Context
This device integrates two matched P-channel MOSFETs in a single SO-8 package with shared thermal path, enabling complementary high-side switching or independent channel control. Its advanced silicon process delivers ultra-low RDS(on) and enhanced repetitive avalanche energy (114 mJ), supporting robust operation under transient overvoltage conditions.
The MOSFET features a body diode with VSD = -1.2 V at -2.0 A and trr = 54–80 ns, making it suitable for synchronous buck topologies where reverse recovery performance impacts efficiency. Gate drive compatibility with standard -10 V logic-level signals ensures direct interfacing with common PWM controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -55 V - Maximum blocking voltage before avalanche conduction; defines safe operating range in negative-rail applications. |
| RDS(on) @ VGS = -10 V | 0.105 Ω - On-resistance at full gate drive; determines I²R conduction loss in high-current paths. |
| ID (continuous, TC = 25°C) | -3.4 A - Max steady-state current per channel without exceeding thermal limits on standard PCB copper. |
| Qg | 26–38 nC - Total gate charge; directly impacts required gate driver current and switching transition time. |
| tr / tf | 10–15 ns / 22–32 ns - Rise/fall times at specified test conditions; sets minimum practical switching frequency and EMI profile. |
| TJ max | +150 °C - Maximum junction temperature; enables reliable operation in sealed or high-ambient industrial environments. |
| EAS | 114 mJ - Single-pulse avalanche energy rating; quantifies ruggedness against inductive turn-off transients. |
Pinout & Package
IRF7342QTRPBF uses an SO-8 surface-mount package (JEDEC MS-012AA compliant) with exposed thermal pad for improved heat dissipation. The dual-die layout supports independent channel routing while sharing thermal mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source 1 / Drain 1 / Gate 1 / Source 2 | Pins 1–4 form Channel 1 (S1–D1–G1) and Channel 2 source (S2); S1 and S2 are internally tied to common source plane in typical layout. |
| 5, 6, 7, 8 | Drain 2 / Gate 2 / Drain 1 / Source 1 | Pins 5–8 complete Channel 2 (D2–G2) and duplicate D1/S1 connections; pin 7 is D1, pin 8 is S1 - enabling parallel or half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Enables compact high-side switching or synchronous rectification without level-shifting circuitry. |
| Ultra-low RDS(on) | 0.105 Ω at -10 V VGS reduces conduction losses by >30% vs. legacy P-MOSFETs in 12 V systems. |
| Enhanced avalanche rating | 114 mJ EAS allows safe operation during inductive load switching without external snubbers. |
| 150°C junction rating | Supports extended thermal margin in enclosed enclosures or high-ambient automotive/industrial environments. |
| Lead-free & RoHS-compliant | Meets IPC/JEDEC J-STD-020D MSL Level 1 handling requirements for reflow assembly. |
Applications
| DC-DC Synchronous Buck Converter | Battery Protection Circuit |
|---|---|
Use Scenario: High-efficiency 5–12 V input to 3.3/5 V output conversion in portable industrial controllers. IC Role / Device Role: Dual P-MOSFET used as synchronous rectifier (low-side) and high-side switch, replacing Schottky diodes. Use Value: Achieves >92% efficiency at 2 A load by eliminating diode forward drop and leveraging low RDS(on). | Use Scenario: Overvoltage/overcurrent cutoff in 2-cell Li-ion battery packs (8.4 V max). IC Role / Device Role: Back-to-back P-MOSFET pair controlling charge/discharge path with integrated body diode conduction. Use Value: Enables bidirectional current blocking with <100 mΩ total path resistance and no external sense resistor. |
| Hot-Swap Controller | Redundant Power OR-ing |
Use Scenario: Inrush-limited insertion of 12 V modules into live backplanes in telecom shelf systems. IC Role / Device Role: High-side P-MOSFET controlled by dedicated hot-swap IC to ramp gate voltage linearly. Use Value: Limits inrush to <1 A using RDS(on)-based current sensing and avoids rail collapse during plug-in. | Use Scenario: OR-ing two 12 V DC supplies in server PSUs to maintain uptime during supply failure. IC Role / Device Role: Each channel independently manages one supply path with body diode forward biasing and active conduction. Use Value: Reduces forward voltage drop from 0.4 V (Schottky) to 0.04 V (at 2 A), cutting OR-ing loss by 90%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7951DP-T1-GE3 | VDSS = -40 V, RDS(on) = 0.095 Ω @ -4.5 V, Qg = 22 nC | Lower voltage rating; better suited for 5–24 V systems with logic-level gate drive only | Select when gate drive is limited to -4.5 V and system voltage ≤40 V. |
| DMC3025LSD-13 | VDSS = -30 V, RDS(on) = 0.032 Ω @ -10 V, SO-8 footprint compatible | Higher current density but reduced breakdown margin; optimized for 3.3/5 V rails | Prefer for ultra-low-loss 5 V synchronous rectifiers where -55 V headroom is unnecessary. |
Compared with Si7951DP-T1-GE3 and DMC3025LSD-13, IRF7342QTRPBF provides superior voltage headroom (-55 V) and ruggedness (114 mJ EAS) at the cost of higher gate charge and slightly higher RDS(on), making it optimal for industrial 12–24 V systems requiring field reliability.
Availability
IRF7342QTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, hot-swap controllers, and redundant power OR-ing applications requiring stable component supply and long-term industrial availability.
Supply support for IRF7342QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.
The IRF7342QTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, computing, and telecom infrastructure.
FAQ
Is IRF7342QTRPBF pin-compatible with earlier IRF7342QPbF variants?
Yes - IRF7342QTRPBF shares identical SO-8 pinout, thermal pad layout, and electrical specifications with IRF7342QPbF. The "TR" suffix denotes tape-and-reel packaging, and "PbF" confirms lead-free compliance; no functional or mechanical differences exist between the variants.
Can IRF7342QTRPBF be used in linear regulator applications?
No - this device is optimized for switching operation, not linear mode. Its Safe Operating Area (SOA) is not characterized for sustained linear-region use, and thermal runaway risk increases above 100 mA due to positive temperature coefficient of RDS(on) and limited power dissipation (2.0 W at TC = 25°C).
What is the maximum recommended gate resistor for driving IRF7342QTRPBF at 500 kHz?
A 6.0 Ω gate resistor is validated in the datasheet for 500 kHz switching with RG = 6.0 Ω, yielding td(off) = 43–64 ns and tf = 22–32 ns. Lower values (≤3.3 Ω) improve switching speed but increase gate driver stress; higher values (>10 Ω) cause excessive switching losses and require derating.
Does IRF7342QTRPBF require external gate pull-down resistors in high-noise environments?
Yes - although the MOSFET has no internal pull-down, a 10–100 kΩ resistor from each gate to its respective source is recommended in noisy industrial settings to prevent false turn-on from EMI-induced gate voltage spikes, especially during power-up or standby states.
IRF7342QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 690pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7342QTRPBF FAQ
1.How can I place an order for IRF7342QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7342QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7342QTRPBF reliable?
The price and inventory of IRF7342QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7342QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7342QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7342QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7342QTRPBF?
IRF7342QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7342QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7342QTRPBF?
For technical support, including IRF7342QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7342QTRPBF requirements.
6.How does Aetrix verify that IRF7342QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7342QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7342QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7342QTRPBF?
All IRF7342QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7342QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7342QTRPBF part is unused and in its original packaging.
Return procedure for IRF7342QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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