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Infineon Technologies IRF7342TRPBF
- Part No.:
- IRF7342TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7342TRPBF.pdf
- Description:
- MOSFET 2P-CH 55V 3.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,036
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Product details
Overview
IRF7342TRPBF from Infineon Technologies is a dual P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -55 V VDS, 0.105 Ω RDS(on) at -10 V VGS, and -3.4 A continuous drain current at 25°C. It delivers ultra-low on-resistance per silicon area, fast switching (td(off) ≤ 64 ns), and rugged avalanche capability (EAS = 114 mJ), enabling high-efficiency synchronous rectification and load switching in DC-DC converters.
For engineers reviewing the IRF7342TRPBF datasheet, IRF7342TRPBF pinout, IRF7342TRPBF application, or IRF7342TRPBF equivalent, key selection criteria include dual P-channel topology for high-side switching without level-shifting, thermal performance under PCB-mount conditions (RθJA = 62.5°C/W), and gate charge profile (Qg = 38 nC) for optimized driver sizing in compact power stages.
Technical Context
This dual P-channel MOSFET integrates two identical die in a single SO-8 package with isolated source terminals (S1, S2) and shared gate connections (G1, G2) - enabling independent control of each channel. Its Generation V HEXFET process yields low RDS(on) and high dV/dt immunity (5.0 V/ns), supporting stable operation in noisy buck converter high-side configurations.
The device features a body diode with VSD = -1.2 V at -2.0 A and trr = 80 ns, making it suitable for freewheeling paths where reverse recovery behavior impacts efficiency. Thermal derating is linear at 16 mW/°C above 70°C ambient, with maximum junction temperature limited to +150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -55 V - supports input rails up to -48 V in telecom and industrial power supplies |
| RDS(on) max | 0.105 Ω @ VGS = -10 V, ID = -3.4 A - enables <1 W conduction loss at full load in 3.3 V–12 V output converters |
| ID cont | -3.4 A @ TA = 25°C - sufficient for 5–10 W synchronous buck stages with forced-air cooling |
| Qg | 38 nC - determines gate driver current requirement (~1.9 A peak for 20 ns turn-on) |
| EAS | 114 mJ - provides single-pulse avalanche robustness during inductive switching transients |
| tr/tf | 10–15 ns / 22–32 ns - enables >1 MHz switching in high-frequency DC-DC topologies |
| RθJA | 62.5°C/W - defines thermal rise over ambient on standard 1"² copper PCB, limiting usable power to ~1.3 W at 70°C ambient |
Pinout & Package
IRF7342TRPBF uses an SO-8 surface-mount package with enhanced thermal lead frame, optimized for vapor-phase, infrared, and wave soldering. The package supports >0.8 W power dissipation in typical PCB mount applications and complies with JEDEC MS-012AA outline and RoHS requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source 1 (S1) | Low-impedance return path for Channel 1; electrically isolated from S2 for dual-rail operation |
| 5 | Gate 1 (G1) | Control terminal for Channel 1; requires negative VGS for turn-on (-10 V typical) |
| 6 | Drain 1 (D1) | Main current path for Channel 1; connected internally to D2 for common-drain configuration |
| 7 | Gate 2 (G2) | Independent control terminal for Channel 2; enables asynchronous or phase-shifted switching |
| 8 | Source 2 (S2) | Isolated return path for Channel 2; allows separate ground referencing or floating bias |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Eliminates need for high-side gate drivers or charge pumps in buck/boost controllers |
| Generation V HEXFET process | Reduces RDS(on) by ~20% vs. prior generation, improving efficiency in space-constrained 5–24 V systems |
| Enhanced SO-8 thermal lead frame | Enables 2× power density vs. standard SO-8 - supports dual-device replacement in same footprint |
| Dynamic dv/dt rating | 5.0 V/ns immunity prevents false turn-on during fast voltage transients in motor drive half-bridges |
| Lead-free and MSL1 | Compatible with standard reflow profiles; no moisture sensitivity concerns in automated assembly |
Applications
| Telecom DC-DC Converters | Industrial PLC I/O Modules |
|---|---|
|
Use Scenario: 48 V input to 3.3 V/5 V point-of-load conversion in base station power supplies. IC Role / Device Role: Dual-channel high-side synchronous rectifier replacing discrete P-MOSFETs and driver ICs. Use Value: Reduces board area by 35% and conduction losses by 18% vs. single-channel alternatives at 2 A load. |
Use Scenario: Isolated 24 V DC power distribution to digital input/output channels in programmable logic controllers. IC Role / Device Role: Independent load switch for channel-level overcurrent protection and hot-swap control. Use Value: Enables per-channel enable/disable with <100 µs response time and <0.5 V dropout at 1.5 A. |
| Automotive Body Control Units | Server VRM Auxiliary Supplies |
|
Use Scenario: 12 V battery-supplied lighting and sensor biasing in non-AEC-Q101-compliant sub-systems. IC Role / Device Role: Dual P-MOSFET for reverse-polarity protection and load switching in interior lighting modules. Use Value: Provides integrated reverse-battery protection (VDS = -55 V) and <150 mΩ total path resistance. |
Use Scenario: 12 V to 1.8 V auxiliary rail for memory buffer and clock ICs in enterprise servers. IC Role / Device Role: High-efficiency synchronous buck high-side switch operating at 500 kHz–1 MHz. Use Value: Achieves >92% efficiency at 3 A with Qg-optimized gate drive and low Crss (86 pF). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7951DP-T1-GE3 | RDS(on) = 0.075 Ω @ -4.5 V (lower gate threshold), Qg = 42 nC, VDS = -40 V | Better suited for 3.3 V logic-driven designs but limited to -40 V breakdown | Select when gate drive voltage is constrained to -4.5 V and input voltage ≤ -36 V |
| DMC3025LSD-13 | RDS(on) = 0.032 Ω @ -10 V, SO-8, but single-channel; requires external driver for dual control | Higher efficiency per channel but doubles component count and layout complexity | Select when maximum RDS(on) reduction is critical and board area is not constrained |
Compared with Si7951DP-T1-GE3, IRF7342TRPBF offers higher voltage margin and lower Qgd/Qg ratio for improved EMI performance; compared with DMC3025LSD-13, it reduces BOM count and routing overhead at the cost of 30% higher RDS(on).
Availability
IRF7342TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial PLC I/O modules, and automotive body control units requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRF7342TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in telecom, computing, and industrial equipment, emphasizing low RDS(on), fast switching, and rugged transient handling.
FAQ
What is the maximum safe operating voltage for IRF7342TRPBF in continuous DC applications?
The absolute maximum VDS is -55 V, but continuous operation should be limited to ≤ -48 V to maintain ≥20% voltage margin against transients and ensure long-term reliability. Derating is required above 70°C ambient due to linear thermal derating (16 mW/°C), reducing usable power from 2.0 W at 25°C to 1.3 W at 70°C.
Can IRF7342TRPBF be used in synchronous rectification for buck converters without a dedicated gate driver?
No - its P-channel structure requires negative gate-to-source voltage for turn-on, so a gate driver capable of pulling G1/G2 below the source potential (e.g., bootstrap or isolated driver) is mandatory. Direct microcontroller GPIO connection is unsafe and will not achieve specified RDS(on) or switching speed.
How does the dual-die SO-8 package affect thermal performance compared to two discrete SO-8 MOSFETs?
The shared thermal pad and optimized lead frame reduce total thermal resistance by ~15% versus two separate SO-8 packages, but simultaneous full-load operation of both channels raises junction temperature faster. For thermal design, use RθJA = 62.5°C/W with derated power (≤1.3 W total) when both channels conduct >2 A continuously.
Is IRF7342TRPBF qualified for automotive applications per AEC-Q101?
No - the datasheet explicitly states this product is not qualified to AEC-Q101. It is rated for industrial and commercial temperature ranges (-55°C to +150°C), but lacks the stress testing, failure analysis, and documentation required for automotive use. For AEC-Q101-compliant alternatives, consult Infineon's OptiMOS™ P-channel portfolio.
IRF7342TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 690pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7342TRPBF FAQ
1.How can I place an order for IRF7342TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7342TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7342TRPBF reliable?
The price and inventory of IRF7342TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7342TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7342TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7342TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7342TRPBF?
IRF7342TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7342TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7342TRPBF?
For technical support, including IRF7342TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7342TRPBF requirements.
6.How does Aetrix verify that IRF7342TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7342TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7342TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7342TRPBF?
All IRF7342TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7342TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7342TRPBF part is unused and in its original packaging.
Return procedure for IRF7342TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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