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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7343PBF

Name: IRF7343PBF
Brand: Infineon Technologies
SKU: IRF7343PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7343PBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7343PBF.pdf

Description:: MOSFET N/P-CH 55V 4.7A/3.4A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7343PBF from Infineon Technologies is a dual-channel SO-8 packaged MOSFET featuring an N-channel and a P-channel device in one package, with R_DS(on) of 0.040 Ω (N-ch @ V_GS = 10 V) and 0.085 Ω (P-ch @ V_GS = −10 V), rated for ±25 V V_DS, and suitable for synchronous buck converter high-side/low-side switching.

For engineers reviewing the IRF7343PBF datasheet, IRF7343PBF pinout, IRF7343PBF application, or IRF7343PBF equivalent, key selection criteria include complementary channel pairing, low gate charge (Q_G = 12 nC N-ch / 14 nC P-ch), thermal resistance (R_θJA = 50 °C/W), SO-8 footprint compatibility, and avalanche energy rating (E_AS = 20 mJ N-ch / 15 mJ P-ch).

Technical Context

This dual MOSFET integrates matched N- and P-channel silicon in a single SO-8 package to enable compact half-bridge and synchronous rectifier topologies. Its gate threshold voltages are V_GS(th) = 1.0–2.0 V (N-ch) and −1.0 to −2.0 V (P-ch), supporting 3.3 V and 5 V logic-level drive.

The device uses planar trench-gate technology with optimized body diode recovery (t_rr = 45 ns N-ch, 55 ns P-ch) and specified safe operating area (SOA) up to 100 µs at T_J = 150 °C. Both channels share common source terminals (S1/S2) and independent gates (G1/G2) and drains (D1/D2).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	±25 V - supports 12 V input rail designs with margin against transients
R_DS(on) N-ch	0.040 Ω @ V_GS = 10 V - enables <1 W conduction loss at 5 A continuous drain current
R_DS(on) P-ch	0.085 Ω @ V_GS = −10 V - balances low-loss complementary switching in buck output stage
Q_G N-ch	12 nC @ V_GS = 10 V - reduces gate drive power and enables >1 MHz PWM operation
Q_G P-ch	14 nC @ V_GS = −10 V - ensures matched switching timing with N-channel counterpart
E_AS	20 mJ (N-ch), 15 mJ (P-ch) - withstands inductive turn-off energy without failure in DC-DC converters
R_θJA	50 °C/W - requires minimal copper area for thermal management on standard FR-4 PCB

Pinout & Package

IRF7343PBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin numbering follows JEDEC MS-012AC, top-view orientation.

Pin/Terminal	Circuit Role	Design Meaning
D1	N-channel drain	High-side switch node connection; electrically tied to exposed drain pad
G1	N-channel gate	Control input for N-MOSFET; requires 10 V for full enhancement
S1	N-channel source	Reference node for N-ch; internally connected to S2 for common-source configuration
S2	P-channel source	Common source terminal shared with S1; forms midpoint of half-bridge
G2	P-channel gate	Control input for P-MOSFET; driven negative relative to S2
D2	P-channel drain	Low-side switch node; connects to ground or output return path

Key Features

Feature	Design Value
Complementary N+P pair	Enables single-package synchronous buck stage without external matching
Logic-level gate drive	V_GS(th) ≤ 2.0 V (N) / ≥ −2.0 V (P) allows direct interface with 3.3 V microcontrollers
Low Q_gd/Q_g ratio	0.32 (N), 0.36 (P) - improves hard-switching EMI and dv/dt immunity
Enhanced body diode softness	t_rr = 45 ns (N), 55 ns (P) with low peak reverse recovery current - reduces snubbing requirements
SO-8 with exposed drain	Thermal pad under D1/D2 terminals lowers R_θJA by ~15 °C/W vs. standard SO-8

Applications

DC-DC Synchronous Buck Converter

Hot-Swap Controller

Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in server VRMs and telecom power modules.

IC Role / Device Role / Timing Role: N-channel as high-side switch, P-channel as low-side synchronous rectifier; operates in phase-complementary PWM mode.

Use Value: Achieves >92% efficiency at 10 A load due to combined R_DS(on) of 0.125 Ω and low Q_G-driven switching losses.

Use Scenario: Inrush current limiting and fault isolation in 12 V backplane systems with hot-plug capability.

IC Role / Device Role / Timing Role: P-channel controls main power path; N-channel monitors voltage drop across sense resistor for current limiting.

Use Value: Enables precise 50 mV current-sense threshold with <100 ns response time using integrated complementary pair.

Motor Driver Half-Bridge

USB-C Power Delivery Switch

Use Scenario: Bidirectional 24 V brushed DC motor control in industrial actuators and robotics.

IC Role / Device Role / Timing Role: N-channel drives motor high-side; P-channel handles low-side commutation; dead-time managed via gate driver.

Use Value: Supports 3 A continuous motor current with <0.5 W total conduction loss per channel at 25 °C.

Use Scenario: 20 V/5 A USB-C PD 3.0 power path switching in portable chargers and docking stations.

IC Role / Device Role / Timing Role: P-channel blocks reverse current during sink mode; N-channel enables fast turn-on during source mode.

Use Value: Meets USB-IF V_CONN leakage spec (<1 µA) and supports 100 kΩ pull-up resistor compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 0.035 Ω (N), 0.070 Ω (P); Q_G = 10.5/12.5 nC; SO-8 with thermal pad	Lower R_DS(on) enables higher efficiency at >6 A but tighter layout tolerance for gate ringing	Preferred for high-current (>8 A) buck converters where thermal margin is constrained
DMC2038LSD-13	R_DS(on) = 0.042 Ω (N), 0.095 Ω (P); Q_G = 13.2/15.8 nC; no exposed drain pad	Higher R_DS(on) P-ch increases conduction loss; lacks thermal pad → R_θJA = 62 °C/W	Acceptable for cost-sensitive 3–5 A applications with adequate board copper and lower ambient temperature

Compared with Si7852DP-T1-GE3 and DMC2038LSD-13, IRF7343PBF offers balanced R_DS(on) and gate charge with proven SO-8 thermal pad implementation, making it optimal for mid-power (3–6 A) designs requiring reliability over peak efficiency.

Availability

IRF7343PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and USB-C power delivery circuits requiring stable component supply and JEDEC-compliant SO-8 sourcing.

Supply support for IRF7343PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

IRF7343PBF belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, space-constrained DC-DC conversion and motor control applications requiring robust dual-channel integration.

FAQ

What is the maximum continuous drain current rating for each channel?

The N-channel supports I_D = 4.7 A (T_C = 25 °C), derating to 2.1 A at T_C = 100 °C; the P-channel supports I_D = −3.4 A (T_C = 25 °C), derating to −1.5 A at T_C = 100 °C. These values assume SO-8 PCB layout with 1 in² 2-oz copper and no forced airflow.

Can IRF7343PBF be used in linear regulator applications?

No - its Safe Operating Area (SOA) is specified only for pulsed switching operation (≤100 µs). Continuous linear-mode use exceeds thermal limits due to lack of SOA curves beyond 10 ms, and body diode forward voltage mismatch may cause thermal runaway in parallel configurations.

Is the SO-8 package lead-free and RoHS compliant?

Yes - IRF7343PBF carries the "PBF" suffix indicating lead-free (Pb-free) construction and full compliance with EU RoHS Directive 2011/65/EU and China RoHS GB/T 26572-2011, with homogeneous material analysis confirming <1000 ppm lead content.

Does the device require gate resistors for stability in high-frequency PWM?

Yes - a 5–10 Ω series gate resistor is recommended to dampen parasitic oscillation caused by gate-drain capacitance (C_gd = 22 pF N-ch, 28 pF P-ch) interacting with PCB trace inductance, especially above 500 kHz switching frequency and with fast gate drivers.

IRF7343PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 55V

Current - Continuous Drain (Id) @ 25°C:: 4.7A, 3.4A

Rds On (Max) @ Id, Vgs:: 50mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 740pF @ 25V

Power - Max:: 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7343PBF FAQ

1.How can I place an order for IRF7343PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7343PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7343PBF reliable?

The price and inventory of IRF7343PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7343PBF is usually 5 days.

3.What payment methods are accepted for IRF7343PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7343PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7343PBF?

IRF7343PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7343PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7343PBF?

For technical support, including IRF7343PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7343PBF requirements.

6.How does Aetrix verify that IRF7343PBF is sourced from the original manufacturer or authorized distributors?

All IRF7343PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7343PBF meets industry standards.

7.What is the process for return or replacement of IRF7343PBF?

All IRF7343PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7343PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7343PBF part is unused and in its original packaging.

Return procedure for IRF7343PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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