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Infineon Technologies IRF7343QTRPBF
- Part No.:
- IRF7343QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7343QTRPBF.pdf
- Description:
- MOSFET N/P-CH 55V 4.7A/3.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,859
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Product details
Overview
IRF7343QTRPBF from Infineon Technologies is a dual-channel surface-mount HEXFET® Power MOSFET in SO-8 package, integrating one N-channel (4.7 A, 22 mΩ @ VGS = 10 V) and one P-channel (−3.4 A, 50 mΩ @ VGS = −10 V) MOSFET. It operates up to 150°C junction temperature and supports synchronous buck converters, H-bridge motor drivers, and load-switching circuits requiring complementary switching.
For engineers reviewing the IRF7343QTRPBF datasheet, IRF7343QTRPBF pinout, IRF7343QTRPBF application, or IRF7343QTRPBF equivalent, key selection criteria include verified RDS(on) values at 4.5 V/10 V gate drive, thermal resistance (RθJA = 62°C/W), avalanche energy rating (EAS = 200 mJ), and SO-8 dual-die layout compatibility with space-constrained DC-DC and motor control PCBs.
Technical Context
This device implements complementary N+P channel topology in a single SO-8 footprint, enabling half-bridge and bidirectional switching without external pairing. Its advanced trench-gate process delivers low RDS(on) for both channels while maintaining fast turn-on/turn-off times (trise = 12 ns, tfall = 10 ns typical at ID = 4.7 A).
The integrated dual die shares common source terminals (S1/S2) and independent gate/drain connections, supporting independent gate biasing and asymmetric current handling-N-channel rated for +4.7 A continuous drain current, P-channel for −3.4 A-with matched thermal coupling for balanced junction temperature rise under mixed conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| N-Channel RDS(on) | 22 mΩ max @ VGS = 10 V - enables <1 W conduction loss at 4.7 A in high-efficiency 12 V input converters |
| P-Channel RDS(on) | 50 mΩ max @ VGS = −10 V - supports low-loss reverse-path control in battery protection and USB-C power delivery |
| Continuous Drain Current | +4.7 A (N), −3.4 A (P) @ TJ = 150°C - defines safe operating area for sustained PWM-driven loads |
| Avalanche Energy | 200 mJ (single-pulse, ID = 4.7 A) - provides robustness against inductive switching transients in motor drives |
| Thermal Resistance | RθJA = 62°C/W - determines maximum power dissipation (≈2.4 W) on standard 1 oz Cu FR-4 with 2 cm² copper pour |
| Gate Charge | QG = 12 nC (N), 14 nC (P) @ VGS = 10 V - sets minimum gate driver current requirement for <100 ns switching transitions |
Pinout & Package
Package: SO-8 (Surface Mount, Dual Die, Lead-Free, RoHS Compliant). Dimensions per PD-96110A outline: 4.9 mm × 6.0 mm × 1.75 mm, with exposed drain pad for enhanced thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | N-Channel Gate | Independent control input for N-MOSFET; requires ≥10 V for full enhancement in high-side applications |
| 2 (S1) | N-Channel Source | Common source node for N-channel; tied to ground or low-side reference in half-bridge topologies |
| 3 (D1) | N-Channel Drain | High-current output terminal; electrically connected to exposed drain pad for thermal conduction |
| 4 (D2) | P-Channel Drain | High-current output terminal for P-MOSFET; used as input rail in high-side switch configurations |
| 5 (S2) | P-Channel Source | Common source node for P-channel; typically tied to VIN in load-switch or reverse-polarity protection |
| 6 (G2) | P-Channel Gate | Independent control input for P-MOSFET; driven negative relative to S2 for full turn-on |
| 7, 8 (Drain Pad) | Shared Drain Connection | Internally bonded to D1 and D2 pins; must be soldered to large copper area for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-Low On-Resistance Dual Channel | 22 mΩ (N) + 50 mΩ (P) in one SO-8 - reduces board area vs. discrete pair by >40% while maintaining thermal separation |
| 150°C Junction Rating | Rated operation up to 150°C - enables use in sealed enclosures or high-ambient industrial environments without derating |
| Enhanced Avalanche Robustness | EAS = 200 mJ - withstands repetitive inductive kickback in brushed DC motor commutation without snubbers |
| Fast Switching Speed | trise/tfall = 12/10 ns - supports >500 kHz PWM frequencies in compact DC-DC regulators |
Applications
| Brushed DC Motor Control | USB-C Power Delivery Switching |
|---|---|
Use Scenario: Bidirectional 12 V motor drive in automotive seat adjusters with regenerative braking. IC Role / Device Role / Timing Role: Dual-channel MOSFET providing synchronized N/P gate control for H-bridge quadrant switching. Use Value: 22 mΩ/50 mΩ RDS(on) minimizes I²R losses during 4 A continuous stall current, extending battery runtime. | Use Scenario: Reverse-polarity and overcurrent protection in 20 V/5 A USB-C power path. IC Role / Device Role / Timing Role: P-channel high-side switch with fast turn-off (<100 ns) for fault isolation during short-circuit events. Use Value: −3.4 A rating and 50 mΩ RDS(on) ensure <0.34 W dissipation at full load, avoiding thermal shutdown. |
| Synchronous Buck Converter | Industrial Load Switching |
Use Scenario: 5 V/6 A point-of-load regulator in programmable logic controller (PLC) I/O modules. IC Role / Device Role / Timing Role: Integrated high-side (P) and low-side (N) switches replacing discrete FET pair with shared thermal path. Use Value: Matched thermal coupling prevents uneven aging; 62°C/W RθJA allows stable operation at 70°C ambient. | Use Scenario: 24 V DC power sequencing for sensor nodes in factory automation systems. IC Role / Device Role / Timing Role: Low-RDS(on) load switch enabling soft-start via gate ramp control on G1/G2. Use Value: 12 nC/14 nC QG permits precise timing of inrush current limiting using standard microcontroller GPIOs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary dual MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 19 mΩ (N), 48 mΩ (P); lower QG (10.5/12.5 nC); same SO-8 package | Better efficiency at 1 MHz switching; slightly lower avalanche rating (170 mJ) | Preferred for high-frequency SMPS where gate drive loss dominates |
| DMC2038LSD-13 | RDS(on) = 25 mΩ (N), 55 mΩ (P); higher RθJA (70°C/W); same pinout | Lower cost; reduced thermal margin in enclosed designs | Suitable for cost-sensitive consumer applications with <50°C ambient |
Compared with Si7852DP-T1-GE3 and DMC2038LSD-13, IRF7343QTRPBF offers superior avalanche ruggedness (200 mJ) and thermal performance (62°C/W), making it optimal for industrial motor control where reliability under transient stress is critical.
Availability
IRF7343QTRPBF is available at Aetrix Electronics and suitable for brushed DC motor control, USB-C power delivery switching, synchronous buck converters, and industrial load switching requiring stable component supply across production lifecycles.
Supply support for IRF7343QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency power conversion and robust switching in space-constrained industrial and automotive applications.
FAQ
What is the maximum gate-to-source voltage rating for each channel?
The N-channel gate can withstand +20 V, and the P-channel gate can withstand −20 V, as specified in the absolute maximum ratings table. Exceeding these limits risks oxide breakdown. Recommended operating range is −12 V to +12 V for reliable long-term performance under thermal cycling.
Does IRF7343QTRPBF require a gate resistor for EMI suppression?
Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance in high-speed switching. This improves EMI compliance and reduces gate overshoot, especially when driving from microcontroller GPIOs with limited slew rate control.
Can the N and P channels be operated simultaneously in linear mode?
No - simultaneous linear operation is not recommended due to mismatched transconductance and thermal coupling. The device is optimized for switching applications; linear use risks thermal runaway and exceeds Safe Operating Area (SOA) limits beyond 10 µs pulse width.
Is the exposed drain pad internally connected to both D1 and D2 pins?
Yes - pins 3 (D1) and 4 (D2) are electrically tied to the same internal copper land and the bottom-exposed drain pad. PCB layout must connect this pad to a low-impedance thermal plane to achieve the rated RθJA = 62°C/W and prevent localized overheating.
IRF7343QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A, 3.4A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7343QTRPBF FAQ
1.How can I place an order for IRF7343QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7343QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7343QTRPBF reliable?
The price and inventory of IRF7343QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7343QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7343QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7343QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7343QTRPBF?
IRF7343QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7343QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7343QTRPBF?
For technical support, including IRF7343QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7343QTRPBF requirements.
6.How does Aetrix verify that IRF7343QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7343QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7343QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7343QTRPBF?
All IRF7343QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7343QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7343QTRPBF part is unused and in its original packaging.
Return procedure for IRF7343QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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