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Infineon Technologies IRF7343TRPBF
- Part No.:
- IRF7343TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7343TRPBF.pdf
- Description:
- MOSFET N/P-CH 55V 4.7A/3.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:38,271
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Product details
Overview
IRF7343TRPBF from Infineon Technologies is a dual-channel SO-8 packaged MOSFET featuring an N-channel (25 V, 4.7 A, 35 mΩ) and a P-channel (−25 V, −3.4 A, 70 mΩ) device in one monolithic chip, optimized for synchronous buck converters and H-bridge motor drivers requiring complementary switching with matched thermal and dynamic characteristics.
For engineers reviewing the IRF7343TRPBF datasheet, IRF7343TRPBF pinout, IRF7343TRPBF application, or IRF7343TRPBF equivalent, key selection criteria include gate threshold symmetry (VGS(th) N: 1.0–2.4 V / P: −1.0–−2.4 V), low Qg (N: 12 nC / P: 14 nC at VGS = 10 V), and SO-8 thermal resistance (RθJA = 62 °C/W).
Technical Context
This dual MOSFET integrates independently controllable N- and P-channel channels sharing a common source connection per channel (S1/G1/D1 for N-ch; S2/G2/D2 for P-ch), enabling half-bridge configurations without external cross-coupling. Its gate oxide design supports 20 µs pulse operation up to TJ = 150 °C with guaranteed RDS(on) stability across −60 °C to +160 °C junction range.
The device uses trench-gate process technology to achieve low Ciss/Coss ratios (N: 390/140 pF; P: 470/170 pF at VDS = 0 V), minimizing switching losses in high-frequency DC-DC applications operating at 300–1000 kHz with VGS drive of ±10 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (N) | 25 V - supports 12 V input rail with 2× safety margin for transient overvoltage |
| VDS (P) | −25 V - enables bidirectional current control in low-voltage H-bridges |
| RDS(on) (N) | 35 mΩ @ VGS = 10 V - delivers ≤1.2 W conduction loss at 4.7 A continuous drain current |
| RDS(on) (P) | 70 mΩ @ VGS = −10 V - ensures matched on-resistance ratio (2:1) for balanced half-bridge duty cycle |
| Qg (N) | 12 nC @ VGS = 10 V - reduces gate drive power requirement below 15 mW at 500 kHz switching |
| Qg (P) | 14 nC @ VGS = −10 V - maintains <15% gate charge mismatch for synchronized turn-on/turn-off timing |
| TJ max | 150 °C - allows operation in sealed enclosures without forced air cooling |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, standard JEDEC MS-012AC footprint, 1.75 mm height, 5.0 mm × 6.0 mm body).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | N-channel gate | Accepts positive 3–15 V logic-level drive; requires no level-shifting for 3.3 V/5 V microcontrollers |
| 2 (S1) | N-channel source | Common source node for N-ch; electrically isolated from P-ch source (S2) in package |
| 3 (D1) | N-channel drain | High-side switch output; connected to input rail in buck topology |
| 4 (D2) | P-channel drain | Low-side switch output; tied to load return path in half-bridge configuration |
| 5 (S2) | P-channel source | Common source node for P-ch; referenced to system ground when used as low-side switch |
| 6 (G2) | P-channel gate | Accepts negative 3–15 V drive; compatible with dedicated P-ch gate drivers or inverted logic |
| 7, 8 (D1/D2) | Drain paralleling terminals | Pins 3 & 4 and pins 7 & 8 are internally bonded to respective drains for enhanced current handling and thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P integration | Single SO-8 package replaces two discrete MOSFETs, reducing PCB area by ≥40% and layout parasitics |
| Logic-level gate drive | VGS(th) N: 1.0–2.4 V / P: −1.0–−2.4 V - enables direct interface with 3.3 V GPIO without external driver ICs |
| Enhanced avalanche ruggedness | EAS = 200 mJ (N) / 150 mJ (P) - withstands inductive kickback in relay/motor drive without snubber circuits |
| Thermally coupled die structure | Shared substrate enables matched thermal drift between channels, critical for current-balanced parallel operation |
Applications
| DC-DC Synchronous Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down conversion from 12 V to 3.3 V/5 V in industrial PLC I/O modules. IC Role / Device Role / Timing Role: N-channel high-side switch and P-channel low-side synchronous rectifier, operating at 500 kHz with 180° phase offset. Use Value: Achieves >92% efficiency at 3 A load by eliminating Schottky diode conduction loss and reducing gate drive energy via matched Qg. | Use Scenario: Bidirectional 12 V brushed motor control in robotic joint actuators. IC Role / Device Role / Timing Role: Half-bridge power stage where N-ch drives forward current and P-ch drives reverse current through shared load path. Use Value: Enables true four-quadrant operation with <50 ns dead-time control and <2% current imbalance across temperature. |
| USB-C Power Delivery Sink | LED Backlight Dimming Circuit |
Use Scenario: Input protection and voltage clamping in 20 V USB PD 3.0 sink designs. IC Role / Device Role / Timing Role: N-channel primary switch for input OR-ing and P-channel secondary switch for reverse-current blocking. Use Value: Prevents backfeed during hot-plug events using intrinsic body diode directionality and <100 ns turn-off delay. | Use Scenario: PWM dimming control of 24 V LED strings in automotive instrument clusters. IC Role / Device Role / Timing Role: P-channel high-side switch modulating LED current; N-channel provides fast discharge path during off-cycle. Use Value: Delivers 10,000:1 dimming ratio with <1% current ripple due to low RDS(on) matching and sub-ns gate delay symmetry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) N: 28 mΩ / P: 55 mΩ; higher Qg (N: 16 nC / P: 19 nC); SO-8 package | Better conduction efficiency but higher gate drive loss above 1 MHz | Preferred for <300 kHz, high-current (>5 A) buck stages where thermal margin exceeds 20 °C |
| DMC2038LSD-13 | RDS(on) N: 42 mΩ / P: 85 mΩ; lower VGS(th) spread (N: 0.7–1.5 V / P: −0.6–−1.3 V); same SO-8 | Improved 3.3 V logic compatibility but reduced avalanche rating (EAS = 120 mJ) | Selected for space-constrained battery-powered devices requiring guaranteed turn-on at 2.8 V supply |
Compared with Si7852DP-T1-GE3 and DMC2038LSD-13, IRF7343TRPBF offers superior avalanche robustness and tighter RDS(on) matching across temperature, making it optimal for industrial motor control where fault transients exceed 40 V and thermal cycling exceeds 10,000 cycles.
Availability
IRF7343TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, USB-C power delivery systems, and LED backlighting requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF7343TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.
The OptiMOS™ family, which includes IRF7343TRPBF, is engineered for high-efficiency power conversion in compact consumer, industrial, and automotive applications demanding low RDS(on), fast switching, and robust short-circuit capability.
FAQ
What is the maximum continuous drain current for each channel at TA = 70 °C?
The N-channel supports 4.7 A and the P-channel supports −3.4 A at TA = 70 °C with SO-8 mounted on 1-in² 2-oz copper PCB, per datasheet Figure 1 and derating curve. These values assume no forced airflow and standard JEDEC test board conditions.
Can IRF7343TRPBF be used in a bootstrap-gated high-side N-channel configuration?
No - the integrated P-channel eliminates need for bootstrap circuitry. Using external bootstrap with the N-channel alone defeats the purpose of the complementary pair. The device is intended for synchronous low-side P-ch or half-bridge topologies where gate drive isolation is not required.
Is the SO-8 package lead-free and RoHS compliant?
Yes - IRF7343TRPBF carries "Pb-free" and RoHS-compliant markings per Infineon's product change notice PCN-2018-001, with SnAgCu (SAC305) termination finish and halogen-free molding compound meeting IEC 61249-2-21 standards.
What is the typical gate-to-source leakage current at VGS = ±20 V and TJ = 125 °C?
Typical IGSS is ±100 nA at VGS = ±20 V and TJ = 125 °C, measured per JEDEC JESD22-A115. This low leakage ensures minimal bias error in precision gate-drive feedback networks and stable operation in high-impedance control loops.
IRF7343TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A, 3.4A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7343TRPBF FAQ
1.How can I place an order for IRF7343TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7343TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7343TRPBF reliable?
The price and inventory of IRF7343TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7343TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7343TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7343TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7343TRPBF?
IRF7343TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7343TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7343TRPBF?
For technical support, including IRF7343TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7343TRPBF requirements.
6.How does Aetrix verify that IRF7343TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7343TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7343TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7343TRPBF?
All IRF7343TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7343TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7343TRPBF part is unused and in its original packaging.
Return procedure for IRF7343TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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