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Vishay Siliconix IRF734PBF
- Part No.:
- IRF734PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF734PBF.pdf
- Description:
- MOSFET N-CH 450V 4.9A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,789
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Product details
Overview
IRF734PBF from Vishay Siliconix is a 450 V, 4.9 A N-channel power MOSFET in TO-220 package, featuring 1.2 Ω RDS(on) at VGS = 10 V, 45 nC total gate charge, and repetitive avalanche rating up to 4.9 A - designed for high-voltage DC-DC converters, AC-DC power supplies, and motor control circuits requiring rugged switching under inductive loads.
For engineers reviewing the IRF734PBF datasheet, IRF734PBF pinout, IRF734PBF application, or IRF734PBF equivalent, key selection criteria include its 450 V VDS, 1.2 Ω on-resistance at 10 V drive, 330 mJ single-pulse avalanche energy, TO-220 thermal performance (RthJC = 1.7 °C/W), and dV/dt immunity of 4.0 V/ns - all critical for reliable high-voltage hard-switching designs.
Technical Context
This third-generation power MOSFET employs planar V-groove technology optimized for fast switching with low gate charge (Qg = 45 nC) and controlled body diode recovery (trr = 460–690 ns). Its 1.2 Ω RDS(on) balances conduction loss and die size for cost-sensitive 450 V applications.
The device supports repetitive avalanche operation (IAR = 4.9 A, EAR = 7.4 mJ) and features dynamic dV/dt immunity (4.0 V/ns), enabling robust operation in unclamped inductive switching circuits without external snubbers in many cases.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 450 V - maximum blocking voltage for primary-side switches in offline SMPS and industrial HV DC links |
| RDS(on) | 1.2 Ω @ VGS = 10 V - determines conduction loss at 4.9 A continuous drain current (TC = 25 °C) |
| Qg | 45 nC - defines gate drive power requirement and switching speed in hard-switched topologies |
| EAS | 330 mJ - enables safe single-pulse inductive turn-off without external clamping in motor drives |
| trr | 460–690 ns - body diode reverse recovery time affecting shoot-through risk and EMI in bridge configurations |
| RthJC | 1.7 °C/W - junction-to-case thermal resistance enabling 74 W dissipation with adequate heatsinking |
| dV/dt | 4.0 V/ns - rated peak diode recovery dV/dt tolerance, supporting noise-immune operation in noisy environments |
Pinout & Package
TO-220 package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.7 °C/W junction-to-case thermal resistance, and RoHS-compliant lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures reliable turn-on with standard gate drivers |
| D (Drain) | High-side power output | Connected to internal die substrate and metal tab; electrically tied to heatsink in standard mounting |
| S (Source) | Power return/reference | Common node for gate drive reference and current sensing; low-inductance source leads (LS = 7.5 nH) |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 4.9 A IAR and 7.4 mJ EAR without degradation - eliminates need for external avalanche protection in flyback and forward converters |
| Dynamic dV/dt immunity | 4.0 V/ns rating prevents false turn-on during high-slew-rate transients in high-noise industrial environments |
| Low Qgd/Qg ratio | 24/45 = 0.53 - improves Miller immunity and reduces risk of spurious turn-on during high dV/dt commutation |
| Fast body diode recovery | trr = 460–690 ns with Qrr = 1.8–2.7 µC - minimizes switching loss and ringing in synchronous rectification and half-bridge LLC |
| Lead (Pb)-free construction | RoHS-compliant TO-220 package with matte tin-plated leads - meets global environmental compliance requirements without derating |
Applications
| Industrial Motor Drives | AC-DC Power Supplies |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pump systems. IC Role / Device Role / Timing Role: High-side N-channel switch handling 400 V DC bus, switched at 15–20 kHz with dead-time control. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM transitions, eliminating external clamps and reducing BOM count. |
Use Scenario: Primary-side switch in 100–300 W offline flyback converter for industrial control power. IC Role / Device Role / Timing Role: Main switching element operating at 65 kHz, subjected to unclamped inductive turn-off stress. Use Value: 330 mJ single-pulse avalanche energy ensures reliable operation without snubber losses or thermal runaway under overload conditions. |
| DC-DC Converters | Lighting Ballasts |
|
Use Scenario: High-voltage buck converter for LED driver input stage in streetlight systems. IC Role / Device Role / Timing Role: Step-down switch regulating 350–400 V input to 100 V intermediate bus. Use Value: 1.2 Ω RDS(on) limits conduction loss to <1.8 W at 4.9 A, enabling compact heatsink design in enclosed luminaires. |
Use Scenario: Resonant inverter switch in electronic HID ballast for high-intensity discharge lamps. IC Role / Device Role / Timing Role: Hard-switched resonant pole device operating at 50–100 kHz with high dv/dt stress. Use Value: 4.0 V/ns dV/dt immunity prevents parasitic turn-on during zero-crossing transitions, improving reliability over 50,000-hour lamp life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDS, 3.5 A ID, 2.2 Ω RDS(on), 25 nC Qg, TO-220FP (full-pack) | Lower current rating and higher on-resistance; smaller gate charge enables faster switching but less rugged avalanche capability | Prefer when lower gate drive power and space-constrained layouts outweigh need for 4.9 A continuous current and 330 mJ EAS |
| FQP4N50C | 500 V VDS, 4.0 A ID, 1.8 Ω RDS(on), 32 nC Qg, TO-220 | Higher voltage rating but reduced current and on-resistance penalty; no specified repetitive avalanche rating | Choose where 500 V margin is critical and avalanche robustness is managed externally via circuit design |
Compared with STP4NK50ZFP and FQP4N50C, the IRF734PBF delivers superior current capability (4.9 A vs. ≤4.0 A), lower on-resistance (1.2 Ω vs. ≥1.8 Ω), and documented repetitive avalanche performance - making it the preferred choice for thermally constrained, high-reliability 450 V switching applications demanding proven ruggedness.
Availability
IRF734PBF is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, and DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRF734PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial and automotive markets.
The IRF734PBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for cost-effective, high-reliability switching in 400–450 V industrial power conversion systems where avalanche robustness and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRF734PBF at 100 °C case temperature?
The IRF734PBF supports 3.1 A continuous drain current at TC = 100 °C, derated from 4.9 A at 25 °C using a linear derating factor of 0.59 W/°C. This value reflects thermal limitations of the TO-220 package and must be validated with actual heatsink performance and ambient conditions in the final layout. The IRF734PBF datasheet specifies this limit in Absolute Maximum Ratings Table.
Does IRF734PBF have a specified repetitive avalanche rating?
Yes, the IRF734PBF is explicitly rated for repetitive avalanche operation: IAR = 4.9 A and EAR = 7.4 mJ, per Absolute Maximum Ratings table and Note a. This rating allows sustained inductive switching without external clamping in properly designed circuits, distinguishing it from non-avalanche-rated MOSFETs. The IRF734PBF specification sheet confirms this under "Repetitive Avalanche Current" and "Repetitive Avalanche Energy" entries.
What is the gate threshold voltage range for IRF734PBF?
The IRF734PBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 µA, ensuring reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. This parameter is measured and guaranteed per the IRF734PBF datasheet's Static Specifications table.
Can IRF734PBF be used in surface-mount designs?
No, the IRF734PBF is exclusively offered in the through-hole TO-220 package and is not available in surface-mount variants. Its mechanical design, thermal path, and pin configuration are optimized for vertical mounting with heatsink attachment to the drain-connected tab. For SMT alternatives, engineers should evaluate other Vishay part numbers such as SiHF734-E3 (same die, TO-220AB variant) or consult updated product families - the IRF734PBF itself is not SMT-compatible.
What is the typical body diode forward voltage of IRF734PBF at 4.9 A and 25 °C?
The IRF734PBF exhibits a typical body diode forward voltage (VSD) of 2.0 V at IS = 4.9 A and TJ = 25 °C with VGS = 0 V, as specified in the Diode Characteristics section. This value impacts conduction loss during freewheeling intervals in bridge topologies and must be considered alongside trr and Qrr for total diode-related losses. The IRF734PBF datasheet lists this in the "Body Diode Voltage" row of the Specifications table.
IRF734PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 450 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 680 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF734PBF FAQ
1.How can I place an order for IRF734PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF734PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF734PBF reliable?
The price and inventory of IRF734PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF734PBF is usually 5 days.
3.What payment methods are accepted for IRF734PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF734PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF734PBF?
IRF734PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF734PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF734PBF?
For technical support, including IRF734PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF734PBF requirements.
6.How does Aetrix verify that IRF734PBF is sourced from the original manufacturer or authorized distributors?
All IRF734PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF734PBF meets industry standards.
7.What is the process for return or replacement of IRF734PBF?
All IRF734PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF734PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF734PBF part is unused and in its original packaging.
Return procedure for IRF734PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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