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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7350PBF

Name: IRF7350PBF
Brand: Infineon Technologies
SKU: IRF7350PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7350PBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7350PBF.pdf

Description:: MOSFET N/P-CH 100V 2.1A/1.5A 8SO

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Product details

Overview

IRF7350PBF from Infineon Technologies (formerly International Rectifier) is a dual-channel surface-mount power MOSFET combining one N-channel and one P-channel HEXFET® device in a single SO-8 package. It delivers 100 V drain-source breakdown voltage for both channels, 0.21 Ω R_DS(on) (N-ch, V_GS = 10 V, I_D = 2.1 A) and 0.48 Ω R_DS(on) (P-ch, V_GS = −10 V, I_D = −1.5 A), with 2.0 W power dissipation at T_A = 25 °C - enabling compact DC motor drive and bidirectional load switching.

For engineers reviewing the IRF7350PBF datasheet, IRF7350PBF pinout, IRF7350PBF application, or IRF7350PBF equivalent, key selection criteria include complementary channel pairing, thermal performance on 1-in² copper board, body diode recovery characteristics (t_rr = 72–110 ns), and SO-8 leadframe optimization for junction-to-drain thermal resistance (R_θJL = 20 °C/W).

Technical Context

This dual MOSFET integrates independent N- and P-channel silicon dies in a modified SO-8 package with enhanced thermal conduction via direct drain-to-leadframe connection. The N-channel supports 2.1 A continuous drain current at 25 °C (1.7 A at 70 °C), while the P-channel handles −1.5 A (−1.2 A at 70 °C), both rated to ±20 V gate-source voltage and −55 to +150 °C junction temperature.

It features fast switching with 8.8–13 nC total gate charge (Q_g), low reverse transfer capacitance (C_rss = 10–16 pF), and robust unclamped inductive switching capability: 35 mJ (N-ch) and 51 mJ (P-ch) single-pulse avalanche energy. Body diodes exhibit V_SD = 1.3–1.6 V and t_rr = 72–120 ns under specified test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	N-ch: 100 V; P-ch: −100 V - enables rail-to-rail switching in ±48 V or 100 V bus systems
R_DS(on)	N-ch: 0.21 Ω @ 10 V; P-ch: 0.48 Ω @ −10 V - determines conduction loss in half-bridge or H-bridge top/bottom switches
I_D (cont)	N-ch: 2.1 A @ 25 °C; P-ch: −1.5 A @ 25 °C - defines maximum steady-state load current per channel
P_D	2.0 W @ T_A = 25 °C - sets thermal design margin on standard FR-4 with 1-in² copper pour
Q_g	N-ch: 8.8–13 nC; P-ch: 10–16 nC - directly impacts gate driver sizing and switching loss at 100–500 kHz
t_rr	N-ch: 72–110 ns; P-ch: 77–120 ns - critical for minimizing shoot-through risk and EMI in synchronous rectification
R_θJA	62.5 °C/W - used to calculate junction temperature rise under real PCB layout conditions

Pinout & Package

The IRF7350PBF uses an SO-8 surface-mount package with a thermally enhanced leadframe optimized for junction-to-drain heat transfer (R_θJL = 20 °C/W). Drain terminals are internally connected to exposed leadframe pads for improved thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	N-channel gate	Controls N-MOSFET turn-on; requires ≥4.5 V threshold, driven with 10 V for full R_DS(on)
2 (S1)	N-channel source	Reference node for N-ch gate drive; common with P-ch drain in high-side switch configurations
3 (D1)	N-channel drain	High-current output path; electrically tied to package leadframe for thermal conduction
4 (D2)	P-channel drain	Shared drain terminal with N-ch source in complementary half-bridge layouts
5 (S2)	P-channel source	Reference node for P-ch gate drive; typically tied to system V_CC in high-side applications
6 (G2)	P-channel gate	Controls P-MOSFET turn-on; requires ≤−2.0 V threshold, driven with −10 V for full R_DS(on)
7, 8	Drain/Source common	Internally connected to D1 and S2 respectively; pins 7 & 8 are drain (N) and source (P) leads with thermal pad function

Key Features

Feature	Design Value
Complementary N+P pair in single SO-8	Reduces PCB area by >40% vs discrete solutions; eliminates matching tolerance between separate devices
Ultra-low R_DS(on) asymmetry	N-ch 0.21 Ω / P-ch 0.48 Ω enables balanced conduction loss in bidirectional switches without derating
Enhanced SO-8 thermal leadframe	R_θJL = 20 °C/W improves heat extraction to PCB copper - critical for sustained 1–2 A loads
Fast body diode recovery	t_rr = 72–120 ns minimizes reverse recovery charge (Q_rr) and associated switching loss in PWM control
Robust avalanche rating	35 mJ (N) / 51 mJ (P) single-pulse energy supports reliable operation during inductive load transients

Applications

DC Motor Control

H-Bridge Load Switching

Use Scenario: Bidirectional 24–48 V brushed DC motor control in industrial actuators and robotic joints.

IC Role / Device Role / Timing Role: Dual-channel power switch providing complementary high-side (P-ch) and low-side (N-ch) drive in half-bridge topology.

Use Value: Enables compact, thermally efficient motor driver with <1.6 V body diode drop and <120 ns reverse recovery - reducing heat generation during direction reversal.

Use Scenario: Programmable polarity load switching in battery-powered test equipment and modular power supplies.

IC Role / Device Role / Timing Role: Complementary MOSFET pair controlling current direction through resistive or inductive loads with minimal dead-time overhead.

Use Value: 0.21 Ω / 0.48 Ω R_DS(on) ensures <0.5 W total conduction loss at 1.5 A - extending runtime and simplifying thermal management.

Automotive Body Control

Power OR'ing Circuits

Use Scenario: Window lift, seat adjustment, and mirror positioning modules requiring reverse polarity protection and PWM dimming.

IC Role / Device Role / Timing Role: High-side P-ch + low-side N-ch switch implementing soft-start, current limiting, and short-circuit detection.

Use Value: ±100 V V_DSS withstands automotive load-dump transients; 150 °C T_JMAX supports under-hood deployment without derating.

Use Scenario: Redundant power path selection in telecom and server backplanes using two independent 12–24 V sources.

IC Role / Device Role / Timing Role: Back-to-back configured N+P MOSFETs acting as ideal diodes with controlled turn-on to prevent reverse current flow.

Use Value: Low Q_g (8.8–16 nC) and fast t_r/t_f enable sub-microsecond switching - eliminating cross-conduction during source switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7260DP-T1-GE3	N-ch R_DS(on) = 0.022 Ω @ 4.5 V; P-ch R_DS(on) = 0.045 Ω @ −4.5 V - lower voltage drive compatible but higher cost	Optimized for 3.3 V logic-level systems; lacks 100 V rating - unsuitable for 48 V industrial buses	Select when gate drive voltage is limited to 3.3–5 V and 48 V operation is not required.
DMC2038LSD-13	N-ch R_DS(on) = 0.042 Ω @ 4.5 V; P-ch R_DS(on) = 0.075 Ω @ −4.5 V; SO-8 package with identical pinout	Lower R_DS(on) but reduced V_DSS (±30 V); lower avalanche energy (12 mJ) limits inductive load robustness	Prefer for 5–12 V battery-powered applications where size and efficiency outweigh transient ruggedness.

Compared with Si7260DP and DMC2038LSD, the IRF7350PBF offers superior 100 V ruggedness and higher avalanche energy - making it uniquely suitable for 24–48 V industrial and automotive loads where bus transients and inductive kickback are routine.

Availability

IRF7350PBF is available at Aetrix Electronics and suitable for DC motor drives, H-bridge load switching, automotive body control modules, and power OR'ing circuits requiring stable component supply across extended production lifecycles.

Supply support for IRF7350PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors - with core expertise in high-reliability silicon-based power devices.

The IRF7350PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for space-constrained, thermally demanding applications requiring complementary high- and low-side switching in a single package.

FAQ

What is the maximum continuous drain current for each channel at 70 °C ambient?

The N-channel supports 1.7 A and the P-channel supports −1.2 A at T_A = 70 °C with V_GS = ±10 V, mounted on a 1-in² copper board. These values reflect linear derating from 2.1 A and −1.5 A at 25 °C using the 0.016 W/°C factor and thermal resistance data.

Can IRF7350PBF be used in a synchronous buck converter as high-side and low-side switches?

No - the IRF7350PBF is not optimized for synchronous buck topologies. Its P-channel high-side switch requires negative gate drive relative to source, and its R_DS(on) asymmetry (0.21 Ω vs 0.48 Ω) creates unequal conduction losses. It is designed for complementary half-bridge or bidirectional load switching, not DC-DC conversion.

Is the SO-8 package lead-free and RoHS compliant?

Yes - the "PbF" suffix in IRF7350PBF explicitly denotes lead-free (Pb-free) construction. It meets RoHS Directive 2011/65/EU requirements and is qualified for vapor phase, infrared, and wave soldering per the manufacturer's packaging specification.

What is the recommended gate resistor value for 100 kHz PWM switching?

A 10–22 Ω gate resistor is recommended to balance switching speed and ringing suppression. With Q_g of 8.8–16 nC and typical driver output impedance, this yields ~100–200 ns turn-on delay and <50 ns rise time - sufficient for 100 kHz operation while limiting dv/dt-induced crosstalk between channels.

IRF7350PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 100V

Current - Continuous Drain (Id) @ 25°C:: 2.1A, 1.5A

Rds On (Max) @ Id, Vgs:: 210mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 380pF @ 25V

Power - Max:: 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7350PBF FAQ

1.How can I place an order for IRF7350PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7350PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7350PBF reliable?

The price and inventory of IRF7350PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7350PBF is usually 5 days.

3.What payment methods are accepted for IRF7350PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7350PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7350PBF?

IRF7350PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7350PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7350PBF?

For technical support, including IRF7350PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7350PBF requirements.

6.How does Aetrix verify that IRF7350PBF is sourced from the original manufacturer or authorized distributors?

All IRF7350PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7350PBF meets industry standards.

7.What is the process for return or replacement of IRF7350PBF?

All IRF7350PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7350PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7350PBF part is unused and in its original packaging.

Return procedure for IRF7350PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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