Infineon Technologies IRF7350TRPBF

Overview

IRF7350TRPBF from Infineon Technologies (formerly International Rectifier) is a dual-channel surface-mount power MOSFET combining one N-channel and one P-channel HEXFET® device in a single SO-8 package. It delivers 100 V drain-source breakdown voltage for both channels, 2.1 A continuous N-channel and –1.5 A P-channel drain current at 25°C, and ultra-low R_DS(on) of 0.21 Ω (N) / 0.48 Ω (P) at V_GS = ±10 V - enabling efficient half-bridge switching in DC motor control and bidirectional load management circuits.

For engineers reviewing the IRF7350TRPBF datasheet, IRF7350TRPBF pinout, IRF7350TRPBF application, or IRF7350TRPBF equivalent, key selection criteria include verified dual-channel thermal coupling in SO-8, body diode recovery performance (t_rr = 72 ns N-ch / 77 ns P-ch), gate charge asymmetry (Q_g = 8.8 nC N-ch / 10 nC P-ch), and avalanche energy rating (E_AS = 35 mJ N-ch / 51 mJ P-ch).

Technical Context

This dual MOSFET integrates complementary N- and P-channel silicon on a shared leadframe to support synchronous half-bridge topologies without external pairing. Its SO-8 package features modified thermal design with R_θJA = 62.5 °C/W and R_θJL = 20 °C/W, enabling direct board-level heat conduction from both dies.

The device operates with matched threshold voltages (V_GS(th) = 2.0–4.0 V N-ch / –2.0 to –4.0 V P-ch), exhibits low gate-to-source leakage (±100 nA), and supports fast switching via low output capacitance (C_oss = 205 pF N-ch / 240 pF P-ch) and controlled dv/dt (4.0–4.3 V/ns).

Key Specifications

Pinout & Package

IRF7350TRPBF uses an 8-pin SO-8 package with exposed drain pads for enhanced thermal performance. The leadframe is customized for dual-die mounting and improved junction-to-lead thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel power MOSFET applications.

Compared with Si7252DN and DMC2038LSD, IRF7350TRPBF provides superior thermal performance (R_θJL = 20 °C/W) and higher avalanche energy, making it preferred for continuous-duty motor control where reliability under transient overload is critical.

Availability

IRF7350TRPBF is available at Aetrix Electronics and suitable for DC motor drives, bidirectional load switches, industrial solenoid controllers, and power tool battery management systems requiring stable component supply and long-term manufacturability.

Supply support for IRF7350TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level solutions.

The IRF7350TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, space-constrained power conversion and motor control applications demanding ruggedness and thermal stability.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

At T_A = 70°C, the N-channel supports 1.7 A and the P-channel supports –1.2 A with V_GS = ±10 V, based on linear derating from 2.1 A / –1.5 A at 25°C and a 0.016 W/°C thermal coefficient. This assumes mounting on a 1 in² copper board per datasheet test conditions.

Can IRF7350TRPBF be used in synchronous rectification applications?

No - IRF7350TRPBF is not optimized for synchronous rectification due to asymmetric R_DS(on) (0.21 Ω vs. 0.48 Ω) and non-matched body diode characteristics (V_SD = 1.3 V N-ch / –1.6 V P-ch). Its design targets complementary switching, not parallel conduction paths.

Is the thermal pad electrically isolated from the drains?

No - pins 7 and 8 (thermal pad) are internally connected to both D1 and D2 drains. The pad must be soldered to a PCB copper area tied to the high-side rail or chassis ground depending on system grounding scheme, and cannot be left floating or insulated.

What is the recommended gate resistor value for 100 kHz PWM operation?

A 10 Ω gate resistor is recommended for 100 kHz operation to balance switching speed (t_r/t_f ≈ 11/13 ns) and gate ringing suppression. Lower values (<5 Ω) increase EMI risk; higher values (>22 Ω) extend switching times beyond 50 ns, raising dynamic losses above 1.2 W at full load.