Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7351PBF

Name: IRF7351PBF
Brand: Infineon Technologies
SKU: IRF7351PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7351PBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7351PBF.pdf

Description:: MOSFET 2N-CH 60V 8A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,528

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7351PBF from Infineon Technologies is a 60V, 8.0A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous rectification in isolated DC-DC converters and low-power motor drive systems. It delivers 17.8mΩ R_DS(on) at V_GS = 10V, 24nC total gate charge, and features fully characterized avalanche capability with 325mJ single-pulse energy rating.

For engineers reviewing the IRF7351PBF datasheet, IRF7351PBF pinout, IRF7351PBF application, or IRF7351PBF equivalent, key selection criteria include its ultra-low gate impedance, body diode reverse recovery charge (Q_rr = 61–92nC), junction-to-ambient thermal resistance (62.5°C/W), and SO-8 leaded package compatibility with standard PCB layout practices for high-frequency switching.

Technical Context

This dual-die SO-8 MOSFET integrates two identical N-channel power cells sharing common source and gate connections - enabling parallel operation without external current-sharing components. Its gate threshold voltage (2.0–4.0V) and negative temperature coefficient of R_DS(on) support stable current sharing in paralleled configurations.

The device employs trench-gate silicon technology to achieve low Q_gd/Q_gs1 ratio (7.2nC / 3.8nC), minimizing C_dv/dt turn-on risk in high-dV/dt synchronous FET applications. Avalanche ruggedness is validated per JEDEC JESD24-11, with E_AS tested at I_AS = 6.4A and T_J = 150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum blocking voltage compatible with 48V input DC-DC topologies and industrial 24V bus systems.
R_DS(on) max	17.8mΩ @ V_GS = 10V - Enables <1W conduction loss at 8A RMS in synchronous rectifier stage operating at 100kHz.
Q_g typ.	24nC - Determines gate driver current requirement (~1.2A peak for 20ns rise time with 20Ω gate resistor).
I_D @ T_A = 25°C	8.0A - Continuous drain current rating under free-air conditions, supporting compact heatsinkless designs up to ~3W dissipation.
R_θJA	62.5°C/W - Junction-to-ambient thermal resistance defines maximum ambient temperature limit (~87°C) for 150°C T_J operation at 1.28W.
Q_rr	61–92nC - Body diode reverse recovery charge directly impacts shoot-through loss and EMI in synchronous buck/forward converters.

Pinout & Package

IRF7351PBF uses an industry-standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The package footprint matches JEDEC MS-012AC and supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D1/D2)	Parallel-connected drain terminals - tied internally to exposed pad; primary current path during conduction and avalanche.
5	Gate (G1)	Control terminal for first MOSFET cell; driven by PWM controller with low-impedance gate driver to minimize switching losses.
6	Source (S1)	Source terminal for first cell; common node with S2 for dual-cell configuration; connects to output rail in synchronous rectifier.
7	Gate (G2)	Control terminal for second MOSFET cell; electrically isolated from G1 but matched in threshold and transconductance.
8	Source (S2)	Source terminal for second cell; bonded to same metallization as S1 - enables true paralleling without external balancing resistors.

Key Features

Feature	Design Value
Ultra-low gate impedance	Enables fast switching with minimal gate driver power loss - critical for >500kHz isolated flyback and LLC resonant converters.
Fully characterized avalanche voltage/current	Validated 325mJ single-pulse E_AS at I_AS = 6.4A ensures robustness against inductive switching transients in motor drive H-bridge legs.
SO-8 dual-die architecture	Two matched N-channel cells share common source and gate pads - eliminates need for external current-sharing components in high-current rectification.
Low Q_gd/Q_gs1 ratio	Ratio of 1.89 (7.2nC / 3.8nC) reduces susceptibility to C_dv/dt turn-on during high-slew-rate node transitions in synchronous FET position.

Applications

Isolated Forward Converter Synchronous Rectifier

Low-Voltage Brushed DC Motor Driver

Use Scenario: Used as secondary-side synchronous rectifier in 36–75V input telecom forward converters delivering 3.3–12V/10A output.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction loss; commutates synchronously with primary-side PWM signal via dedicated gate driver.

Use Value: Achieves >2% efficiency gain over 40V Schottky at full load due to 17.8mΩ R_DS(on) and low Q_rr-induced switching loss.

Use Scenario: Half-bridge high-side switch in battery-powered 12V brushed DC motor control for portable medical pumps and lab equipment.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled via bootstrap gate driver; handles bidirectional current during PWM-driven direction reversal.

Use Value: SO-8 package allows compact 2-layer PCB layout; avalanche rating protects against inductive kickback during rapid deceleration.

48V Input Isolated Flyback PSU

Industrial PLC Digital Output Module

Use Scenario: Primary-side active clamp switch and secondary-side rectifier in 48V input flyback with 5V/3A output for industrial IoT gateways.

IC Role / Device Role / Timing Role: Dual-role device: clamps transformer leakage energy during reset phase and rectifies output with synchronous timing.

Use Value: Matched dual die enables identical timing and voltage sharing between clamp and rectifier paths - simplifies gate drive design.

Use Scenario: Solid-state replacement for electromechanical relay in 24V DC digital output module driving solenoids and indicator lamps.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode providing freewheeling path for inductive loads.

Use Value: 1.8A continuous source current rating and 64A pulsed capability support 100ms inrush currents typical of 24V solenoid coils.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7341PBF	Same SO-8 dual-die structure but rated for 55V V_DSS and 19.5mΩ R_DS(on) at 10V.	Limited to ≤48V bus systems; lower avalanche energy (280mJ) reduces margin in high-inductance motor drives.	Select when cost sensitivity outweighs 5V headroom need and system V_IN never exceeds 42V.
Si7852DP-T1-GE3	Vishay dual N-channel MOSFET with 60V rating, 15.5mΩ R_DS(on), but higher Q_g (32nC) and no published avalanche characterization.	Better conduction loss but increased gate drive loss and unverified ruggedness in unclamped inductive switching.	Prefer for low-frequency, low-dV/dt applications where avalanche stress is absent and gate drive capability is ample.

Compared with IRF7341PBF and Si7852DP-T1-GE3, IRF7351PBF offers the highest combination of avalanche ruggedness, gate charge efficiency, and dual-die matching - making it optimal for high-reliability isolated DC-DC and motor control where transient immunity and thermal predictability are critical.

Availability

IRF7351PBF is available at Aetrix Electronics and suitable for isolated DC-DC converters, low-power motor drive systems, and industrial digital output modules requiring stable component supply across multi-year production cycles.

Supply support for IRF7351PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency power conversion in telecom, computing, and industrial applications - emphasizing ruggedness, low R_DS(on), and fast switching for SMPS, motor drives, and load switching.

FAQ

What is the maximum continuous drain current for IRF7351PBF at 70°C ambient?

The maximum continuous drain current at T_A = 70°C is 6.4A with V_GS = 10V, derated from 8.0A at 25°C using the linear derating factor of 0.016W/°C and R_θJA = 62.5°C/W. This assumes SO-8 mounting on 1-inch² 2-oz copper with 2 vias to inner ground plane.

Does IRF7351PBF have an integrated body diode, and what are its key parameters?

Yes - it features a monolithic integral p-n junction body diode with V_SD = 1.3V max at I_S = 6.4A, t_rr = 20–30ns, and Q_rr = 61–92nC. These values are measured at T_J = 25°C, V_DD = 30V, and di/dt = 300A/µs, critical for synchronous rectifier loss modeling.

Can IRF7351PBF be used in parallel configurations without external gate resistors?

Yes - its matched dual-die structure ensures balanced current sharing between internal cells without external balancing components. However, individual gate resistors (≥5Ω) are still recommended to damp ringing and prevent oscillatory turn-on in high-speed layouts.

What is the gate-to-source voltage rating, and why is ±20V specified?

The absolute maximum V_GS rating is ±20V. The negative rating accommodates transient undershoot during fast turn-off in high-side configurations with bootstrap drivers, preventing gate oxide damage from negative spikes exceeding –20V.

IRF7351PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 8A

Rds On (Max) @ Id, Vgs:: 17.8mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 36nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 1330pF @ 30V

Power - Max:: 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7351PBF FAQ

1.How can I place an order for IRF7351PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7351PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7351PBF reliable?

The price and inventory of IRF7351PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7351PBF is usually 5 days.

3.What payment methods are accepted for IRF7351PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7351PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7351PBF?

IRF7351PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7351PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7351PBF?

For technical support, including IRF7351PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7351PBF requirements.

6.How does Aetrix verify that IRF7351PBF is sourced from the original manufacturer or authorized distributors?

All IRF7351PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7351PBF meets industry standards.

7.What is the process for return or replacement of IRF7351PBF?

All IRF7351PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7351PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7351PBF part is unused and in its original packaging.

Return procedure for IRF7351PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…