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Infineon Technologies IRF7351TRPBF
- Part No.:
- IRF7351TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7351TRPBF.pdf
- Description:
- MOSFET 2N-CH 60V 8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:27,053
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Product details
Overview
IRF7351TRPBF from Infineon Technologies is a 60V, 8.0A N-channel dual SO-8 Power MOSFET optimized for synchronous rectification in isolated DC-DC converters. It features 17.8mΩ RDS(on) at VGS = 10V, 24nC total gate charge, and fully characterized avalanche capability (325mJ EAS). Its ultra-low gate impedance supports high-frequency switching in compact power supplies.
For engineers reviewing the IRF7351TRPBF datasheet, IRF7351TRPBF pinout, IRF7351TRPBF application, or IRF7351TRPBF equivalent, key selection criteria include RDS(on) vs. temperature stability, Qgd/Qgs1 ratio for Cdv/dt immunity, body diode reverse recovery (Qrr = 61–92nC), and SO-8 thermal performance (RθJA = 62.5°C/W).
Technical Context
This dual N-channel MOSFET integrates two identical 60V/8.0A die in a single SO-8 package, enabling complementary control in half-bridge or synchronous buck configurations. Its gate threshold voltage (2.0–4.0V) and low 13.7mΩ typical RDS(on) support efficient operation with standard 10V gate drivers.
The device's fully characterized unclamped inductive switching (UIS) performance-325mJ single-pulse avalanche energy at TJ = 150°C-and 1.3V body diode forward voltage (VSD) at IS = 6.4A enable robust operation under transient overloads and reverse conduction in synchronous rectifier topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Maximum blocking voltage compatible with 48V input DC-DC systems and industrial 24V/36V rails. |
| RDS(on) max | 17.8mΩ @ VGS = 10V - Enables ≤1.1W conduction loss at 8A DC, critical for thermally constrained PCB layouts. |
| Qg typ. | 24nC - Determines gate drive power (Pdrive = Qg × VGS × f); enables <1MHz operation with moderate driver strength. |
| EAS | 325mJ - Confirmed single-pulse avalanche energy ensures survivability during output short-circuit or startup transients. |
| Qrr | 61–92nC - Quantifies body diode reverse recovery charge; directly impacts switching loss and shoot-through risk in synchronous FETs. |
| RθJA | 62.5°C/W - Defines maximum junction-to-ambient thermal resistance on 1-in² 2-oz copper; sets practical power derating above 70°C ambient. |
Pinout & Package
IRF7351TRPBF uses an industry-standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The dual-die layout shares common source terminals and independent gate/drain connections per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (G1, S2, G2, S1) | Gate 1 / Source 2 / Gate 2 / Source 1 | Independent gate inputs and interleaved source terminals allow separate control of each MOSFET; S1/S2 are internally tied to common source plane but electrically isolated for layout flexibility. |
| 5, 6, 7, 8 (D1, D1, D2, D2) | Drain 1 / Drain 2 | Double-bonded drain pins per channel reduce parasitic inductance and improve current sharing; both D1 pins connect to same internal die drain node. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate impedance | Enables fast, low-loss switching with minimal gate driver overshoot-critical for >500kHz synchronous rectifiers. |
| Fully characterized avalanche voltage/current | Guarantees 325mJ single-pulse energy handling without degradation, eliminating need for external snubbers in flyback designs. |
| Body diode with low VSD and Qrr | 1.3V forward drop and 61–92nC reverse recovery charge reduce conduction and switching losses during freewheeling phase. |
| SO-8 with exposed drain pad | Provides 20°C/W junction-to-lead thermal path (RθJL) for direct heatsinking via PCB copper pour or thermal vias. |
Applications
| Isolated Forward/Flyback Converter | Low-Power BLDC Motor Drive |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 12–48V input telecom or server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; switched complementary to primary-side FET. Use Value: Reduces conduction loss by >40% vs. 40V Schottky, improving full-load efficiency from 89% to 92.5% at 200kHz. | Use Scenario: Half-bridge leg in 24V/100W fan or pump motor controllers. IC Role / Device Role / Timing Role: High- and low-side switch pair controlling phase current direction and PWM duty cycle. Use Value: Dual-channel integration eliminates discrete layout mismatch; matched RDS(on) ensures balanced current sharing and thermal stress. |
| USB-C PD Power Adapter | Industrial PLC I/O Module |
Use Scenario: Output rectification in 60W GaN-based USB-C adapters with 5–20V variable output. IC Role / Device Role / Timing Role: Synchronous rectifier operating across wide VOUT range; body diode conducts during light-load discontinuous conduction mode (DCM). Use Value: Low 2.0–4.0V VGS(th) enables reliable turn-on even with reduced gate drive voltage during adaptive DCM control. | Use Scenario: Solid-state relay replacement in 24V DC digital output modules driving solenoids or indicators. IC Role / Device Role / Timing Role: Load switch with integrated protection; controlled via microcontroller GPIO with optocoupler isolation. Use Value: 60V VDSS withstands 2× supply rail transients; 150°C TJ(max) supports operation in sealed enclosures up to 85°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | 60V, 9.2A, RDS(on) = 15.5mΩ @ 10V; Qg = 22nC; no published EAS rating | Lacks documented avalanche ruggedness; requires external clamping in inductive loads | Preferable where gate charge minimization is prioritized over transient overload survival |
| DMN601DWK-7 | 60V, 7.5A, RDS(on) = 20mΩ @ 10V; Qg = 17nC; SO-8 with dual drain pads | Higher RDS(on) increases conduction loss; lower Qg reduces drive loss at high frequency | Better suited for <300kHz switching where thermal margin allows higher on-resistance |
Compared with Si7852DP-T1-GE3 and DMN601DWK-7, IRF7351TRPBF offers superior avalanche ruggedness and tighter RDS(on) tolerance, making it preferred for unclamped inductive switching and high-reliability isolated DC-DC systems-while its 24nC Qg remains competitive for sub-1MHz operation.
Availability
IRF7351TRPBF is available at Aetrix Electronics and suitable for isolated DC-DC converters, low-power motor drives, and industrial I/O modules requiring stable component supply and long-term manufacturability.
Supply support for IRF7351TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRF7351TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in space-constrained applications such as telecom power supplies and motor control modules.
FAQ
What is the maximum continuous drain current for IRF7351TRPBF at 70°C ambient?
The maximum continuous drain current is 6.4A at TA = 70°C with VGS = 10V, based on SO-8 package thermal limits and 17.8mΩ RDS(on) derating. This value assumes 1-in² 2-oz copper PCB with 20 thermal vias under the exposed drain pad and natural convection cooling.
Does IRF7351TRPBF have a built-in body diode, and what are its key parameters?
Yes, IRF7351TRPBF integrates a monolithic body diode with VSD = 1.3V at IS = 6.4A and reverse recovery charge Qrr = 61–92nC at di/dt = 300A/µs. These values are measured per channel and support synchronous rectifier operation without external diodes in most isolated topologies.
Can IRF7351TRPBF be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (0.068V/°C breakdown voltage tempco) ensures inherent current sharing when paralleled. However, gate loop inductance must be matched between channels, and individual gate resistors (≥10Ω) are recommended to prevent oscillation during turn-on.
What is the gate-to-source voltage rating, and why is ±20V specified?
The absolute maximum VGS rating is ±20V. This limit protects the gate oxide from rupture during transient events like ESD or gate driver overshoot. Operation beyond ±20V-even briefly-risks permanent gate damage, so gate drivers must clamp outputs within this range using Zener diodes or active clamping circuits.
IRF7351TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 8A
- Rds On (Max) @ Id, Vgs:
- 17.8mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1330pF @ 30V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7351TRPBF FAQ
1.How can I place an order for IRF7351TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7351TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7351TRPBF reliable?
The price and inventory of IRF7351TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7351TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7351TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7351TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7351TRPBF?
IRF7351TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7351TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7351TRPBF?
For technical support, including IRF7351TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7351TRPBF requirements.
6.How does Aetrix verify that IRF7351TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7351TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7351TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7351TRPBF?
All IRF7351TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7351TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7351TRPBF part is unused and in its original packaging.
Return procedure for IRF7351TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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