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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7379

Name: IRF7379
Brand: Infineon Technologies
SKU: IRF7379
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7379

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7379.pdf

Description:: MOSFET N/P-CH 30V 5.8A/4.3A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,275

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Product details

Overview

IRF7379 from International Rectifier is a dual N-Channel and P-Channel complementary MOSFET in a single SO-8 package, configured as a half-bridge power stage. It delivers 30V/–30V V_DSS, 5.8A/–4.3A continuous drain current at 25°C, and ultra-low R_DS(on) of 0.045Ω (N-Ch) / 0.090Ω (P-Ch) at V_GS = ±10V, enabling high-efficiency synchronous buck and H-bridge motor control in space-constrained DC-DC converters.

For engineers reviewing the IRF7379 datasheet, IRF7379 pinout, IRF7379 application, or IRF7379 equivalent, key selection criteria include complementary channel pairing, SO-8 thermal performance (R_θJA = 50°C/W), avalanche rating, and gate charge values (Q_g = 7.7nC / 18nC) critical for PWM switching loss optimization.

Technical Context

The IRF7379 integrates two discrete HEXFET® Power MOSFETs - one N-channel and one P-channel - on a shared leadframe within an SO-8 package modified for enhanced thermal conduction and multi-die capability. Its complementary structure supports bidirectional current flow without external level-shifting circuitry in low-side/high-side configurations.

Each channel is fully avalanche-rated and specified for operation across –55°C to +150°C junction temperature. The N-channel device exhibits typical g_fs = 520 mS and Q_gd = 2.9 nC; the P-channel shows g_fs = 440 mS and Q_gd = 2.9 nC - enabling matched dynamic response in push-pull topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	N-Ch: 30V; P-Ch: –30V - defines maximum blocking voltage in half-bridge leg before breakdown
R_DS(on)	N-Ch: 0.045Ω @ V_GS = 10V; P-Ch: 0.090Ω @ V_GS = –10V - determines conduction loss at rated load current
I_D (25°C)	N-Ch: 5.8A; P-Ch: –4.3A - sets continuous output current capability with standard PCB mounting
Q_g	N-Ch: 7.7nC; P-Ch: 18nC - governs gate drive power and switching speed in PWM applications
R_θJA	50°C/W - quantifies thermal resistance from junction to ambient on FR-4 board, guiding heatsinking needs
trr / Q_rr	N-Ch: 72ns / 25nC; P-Ch: 93ns / 25nC - impacts body diode recovery losses during dead-time commutation

Pinout & Package

IRF7379 uses an SO-8 surface-mount package with exposed drain pads optimized for thermal dissipation via vapor-phase, infrared, or wave soldering. The leadframe is customized for improved thermal characteristics and dual-die integration.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	N-Channel Gate	Controls N-MOSFET turn-on; requires ≥10V for full enhancement and minimal R_DS(on)
2 (S1)	N-Channel Source	Common source node for N-channel; connects to ground or low-side return path
3 (D1)	N-Channel Drain	High-side output node in half-bridge; ties to input rail or inductor connection point
4 (D2)	P-Channel Drain	Shared drain terminal with D1 - forms common switching node in complementary half-bridge
5 (S2)	P-Channel Source	Connects to positive supply rail; serves as high-side reference for P-MOSFET
6 (G2)	P-Channel Gate	Controls P-MOSFET turn-on; driven negative relative to S2 for full enhancement
7, 8	Drain (N+P)	Internally connected drain terminals (D1/D2); primary thermal path to PCB copper

Key Features

Feature	Design Value
Complementary N+P Channel Pair	Enables compact half-bridge implementation without external logic-level translation or discrete layout matching
Fifth Generation HEXFET® Process	Achieves 0.045Ω/0.090Ω R_DS(on) in SO-8 - reduces conduction loss by >30% vs. prior-gen dual MOSFETs
Full Avalanche Rating	Withstands repetitive unclamped inductive switching events up to I_SD = 2.4A (N) / –1.8A (P) without degradation
Enhanced SO-8 Thermal Leadframe	Supports 2.5W power dissipation at 25°C ambient - enables higher current density than standard SO-8

Applications

DC-DC Synchronous Buck Converter

H-Bridge Motor Driver

Use Scenario: Step-down voltage regulation in portable industrial controllers with 12V input and 3.3V/5V output rails.

IC Role / Device Role / Timing Role: N-channel switches high-side; P-channel serves as synchronous rectifier low-side switch in fixed-frequency PWM topology.

Use Value: Dual-channel integration eliminates layout mismatch, reduces gate drive complexity, and cuts board area by 40% vs. discrete pairs.

Use Scenario: Bidirectional 24V brushed DC motor control in automated gate actuators requiring stall-tolerant operation.

IC Role / Device Role / Timing Role: Complementary pair forms full H-bridge leg; N-channel drives motor to ground, P-channel drives to supply under PWM control.

Use Value: Matched R_DS(on) and Q_g ensure symmetrical rise/fall times, minimizing shoot-through risk during direction reversal.

USB-C Power Delivery Sink

LED Backlight Dimming Circuit

Use Scenario: Input power path management in USB-C PD sink devices supporting 20V/3A input with overvoltage protection.

IC Role / Device Role / Timing Role: N-channel acts as input enable switch; P-channel provides reverse polarity protection and OR-ing function.

Use Value: Integrated complementary pair allows single-package input stage with <100mV forward drop at 3A and fast fault isolation.

Use Scenario: High-efficiency dimming control for 12V LED arrays in automotive interior lighting modules.

IC Role / Device Role / Timing Role: P-channel modulates LED current path; N-channel handles PWM timing and current sensing feedback loop grounding.

Use Value: Low Q_gd (2.9nC each) ensures sharp edge transitions at 1–20kHz PWM frequencies, eliminating visible flicker.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET half-bridge applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP	N-Ch R_DS(on) = 0.035Ω @ 10V; P-Ch R_DS(on) = 0.065Ω @ –10V - lower on-resistance but higher Q_g (12nC/24nC)	Better efficiency at light loads; less suitable for high-frequency (>500kHz) switching due to gate charge penalty	Prefer when conduction loss dominates; verify gate driver can source/sink 2.5× more peak current
DMC2038LSD	SO-8 package; N-Ch R_DS(on) = 0.052Ω; P-Ch R_DS(on) = 0.11Ω - higher R_DS(on) but tighter V_GS(th) tolerance (±0.3V)	Improved gate threshold consistency aids analog linear-mode operation (e.g., hot-swap controllers)	Select when precise turn-on voltage matching matters more than absolute R_DS(on) minimization

Compared with Si7851DP and DMC2038LSD, IRF7379 offers balanced trade-offs: moderate R_DS(on), proven avalanche ruggedness, and SO-8 thermal reliability - making it optimal for cost-sensitive industrial motor and DC-DC designs where robustness outweighs marginal efficiency gains.

Availability

IRF7379 is available at Aetrix Electronics and suitable for DC-DC synchronous buck converters, H-bridge motor drivers, USB-C power delivery sinks, and LED backlight dimming circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF7379 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) specialized in power semiconductors, particularly high-efficiency MOSFETs and IGBTs for industrial, automotive, and computing applications.

The HEXFET® Power MOSFET product line was engineered for high-power-density switching applications demanding low R_DS(on), fast switching, and rugged avalanche performance - directly addressing needs in motor drives, power supplies, and battery management systems.

FAQ

What is the maximum safe operating junction temperature for IRF7379?

The absolute maximum junction temperature is +150°C per datasheet specifications. Operation above this limit risks permanent parametric shift or catastrophic failure. Derating begins at 25°C ambient using the linear derating factor of 0.02 W/°C, meaning power dissipation must be reduced by 20mW for every 1°C rise above 25°C ambient.

Can IRF7379 be used in linear (analog) mode for hot-swap or current-limit applications?

Yes - both channels support linear-mode operation with verified safe operating area (SOA) curves in Figures 1–4 and 11–14. The N-channel supports 1.0A continuous at V_DS = 10V and T_J = 25°C; the P-channel supports –1.0A at V_DS = –10V. Thermal design must account for localized heating under constant bias.

Is the IRF7379 RoHS-compliant and lead-free?

Yes - the part number suffix "PbF" explicitly denotes lead-free and RoHS-compliant construction. The package meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and is qualified for vapor phase, infrared, and wave soldering per manufacturer guidelines.

How does the shared drain (D1/D2) configuration affect PCB layout?

The internal connection between D1 and D2 creates a single high-current switching node - requiring a low-inductance, wide copper pour tied directly to the input capacitor's negative terminal. Layout must avoid routing sensitive gate traces near this node to prevent coupling-induced false triggering during dv/dt transients up to ±5V/ns.

IRF7379 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 5.8A, 4.3A

Rds On (Max) @ Id, Vgs:: 45mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 520pF @ 25V

Power - Max:: 2.5W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7379 FAQ

1.How can I place an order for IRF7379 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7379 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7379 reliable?

The price and inventory of IRF7379 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7379 is usually 5 days.

3.What payment methods are accepted for IRF7379?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7379 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7379?

IRF7379 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7379 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7379?

For technical support, including IRF7379 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7379 requirements.

6.How does Aetrix verify that IRF7379 is sourced from the original manufacturer or authorized distributors?

All IRF7379 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7379 meets industry standards.

7.What is the process for return or replacement of IRF7379?

All IRF7379 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7379, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7379 part is unused and in its original packaging.

Return procedure for IRF7379:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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