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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7379PBF

Name: IRF7379PBF
Brand: Infineon Technologies
SKU: IRF7379PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7379PBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7379PBF.pdf

Description:: MOSFET N/P-CH 30V 5.8A/4.3A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7379PBF from Infineon Technologies (formerly International Rectifier) is a dual N- and P-channel complementary MOSFET in a single SO-8 package, configured as a half-bridge power stage. It delivers 30 V/5.8 A N-channel and –30 V/–4.3 A P-channel operation with R_DS(on) of 45 mΩ and 90 mΩ at V_GS = ±10 V, respectively, enabling efficient synchronous buck or H-bridge motor control in compact DC-DC converters.

For engineers reviewing the IRF7379PBF datasheet, IRF7379PBF pinout, IRF7379PBF application, or IRF7379PBF equivalent, key selection criteria include complementary channel matching, low gate charge (Q_g = 7.7 nC / 18 nC), fast switching (t_r = 21 ns / t_f = 22 ns), avalanche ruggedness, and SO-8 thermal performance for high-density power stages.

Technical Context

This device integrates two discrete HEXFET® Power MOSFETs-N-channel and P-channel-on a shared leadframe to form a matched complementary pair optimized for half-bridge topologies. Its SO-8 package uses a customized leadframe for enhanced thermal resistance (R_θJA = 50 °C/W) and supports vapor-phase, IR, and wave soldering.

The N-channel exhibits V_BR(DSS) = 30 V, R_DS(on) = 45 mΩ @ 5.8 A/10 V, and Q_g = 7.7 nC; the P-channel provides V_BR(DSS) = –30 V, R_DS(on) = 90 mΩ @ –4.3 A/–10 V, and Q_g = 18 nC. Both channels are fully avalanche rated and feature body diodes with t_rr = 71 ns (N) / 80 ns (P) and Q_rr = 56 nC / 66 nC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	N-Ch: 30 V; P-Ch: –30 V - defines maximum blocking voltage in half-bridge high-side/low-side positions
R_DS(on) @ V_GS = ±10 V	N-Ch: 45 mΩ; P-Ch: 90 mΩ - determines conduction loss asymmetry and thermal balance in complementary switching
Continuous I_D @ T_A = 25°C	N-Ch: 5.8 A; P-Ch: –4.3 A - sets peak steady-state current capability per channel under natural convection
Total Gate Charge (Q_g)	N-Ch: 7.7 nC; P-Ch: 18 nC - directly impacts drive strength requirement and switching loss asymmetry
Thermal Resistance R_θJA	50 °C/W - enables ~2.5 W dissipation on FR-4 board without heatsink, critical for space-constrained power stages
Avalanche Energy Rating	Repetitive, unclamped - allows robust operation during inductive turn-off transients without external snubbers
Body Diode t_rr	N-Ch: 71 ns; P-Ch: 80 ns - influences shoot-through risk and reverse recovery loss in synchronous rectification

Pinout & Package

IRF7379PBF is housed in a surface-mount SO-8 package with exposed drain pads for improved thermal conduction. The leadframe is modified for enhanced thermal characteristics and multiple-die integration.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	N-channel gate	Controls N-MOSFET turn-on/turn-off; requires ≥10 V for full enhancement
2 (S1)	N-channel source	Common node for N-MOSFET source and P-MOSFET drain connection in half-bridge configuration
3 (D1)	N-channel drain	Connects to input rail (high-side switch output) or load node in buck/H-bridge
4 (D2)	P-channel drain	Internally tied to S1 - forms common source/drain junction for complementary pair
5 (S2)	P-channel source	Connects to ground or low-side return path; defines reference for P-MOSFET gate drive
6 (G2)	P-channel gate	Controls P-MOSFET; driven negative relative to S2 for enhancement-mode operation
7, 8 (D1/D2)	Drain terminals (dual)	Exposed drain pads on bottom side - primary thermal path to PCB copper pour

Key Features

Feature	Design Value
Complementary N/P-channel pairing	Enables integrated half-bridge implementation without discrete layout mismatch or timing skew
Fifth-generation HEXFET® silicon	Delivers ultra-low R_DS(on) density and improved gate charge efficiency over prior generations
SO-8 with enhanced thermal leadframe	Reduces R_θJA by ~20% vs. standard SO-8, supporting higher power density in DC-DC modules
Full avalanche rating	Withstands unclamped inductive energy up to rated E_AS, eliminating need for external clamping in motor drives
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), suitable for standard reflow profiles

Applications

Brushless DC Motor Driver

Synchronous Buck Converter

Use Scenario: Three-phase BLDC inverter stage using three IRF7379PBFs (one per leg) for compact fan or pump control.

IC Role / Device Role / Timing Role: Dual-channel MOSFET providing high-side N-ch and low-side P-ch switching per phase leg.

Use Value: Matched R_DS(on) and gate charge reduce dead-time uncertainty and conduction imbalance across phases.

Use Scenario: Point-of-load (POL) regulator for FPGA core supply in telecom baseband cards.

IC Role / Device Role / Timing Role: Integrated half-bridge switch replacing discrete N+P pairs to shrink footprint and improve layout symmetry.

Use Value: SO-8 thermal design supports 2.5 W continuous dissipation at 70°C ambient without heatsink.

H-Bridge DC Motor Control

USB-C Power Delivery Sink

Use Scenario: Bidirectional 12 V DC motor driver in industrial actuator with PWM speed and direction control.

IC Role / Device Role / Timing Role: Single IRF7379PBF per H-bridge quadrant, with complementary channels forming one half-bridge arm.

Use Value: Avalanche ruggedness tolerates back-EMF spikes during sudden motor stop or reversal.

Use Scenario: 20 V/3 A USB PD sink circuit requiring reverse-polarity protection and dynamic load switching.

IC Role / Device Role / Timing Role: P-channel high-side switch (S2–G2–D2 path) for input polarity control and N-channel for active discharge path.

Use Value: Low R_DS(on) (90 mΩ) minimizes forward drop in reverse-voltage protection path.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	N-Ch: 30 V / 6.5 A / 32 mΩ; P-Ch: –30 V / –5.2 A / 65 mΩ; Q_g lower (N: 5.5 nC, P: 12 nC)	Better R_DS(on) match and lower gate charge reduce switching loss asymmetry	Preferred where precise channel matching and reduced drive loss are critical
DMC3025LSD-13	N-Ch: 30 V / 9.5 A / 25 mΩ; P-Ch: –30 V / –7.5 A / 50 mΩ; SO-8 but no exposed drain pad	Higher current rating but higher R_θJA (~62 °C/W) limits power density in thermally constrained layouts	Selected when higher continuous current is required and thermal margin permits

Compared with IRF7379PBF, Si7851DP offers tighter R_DS(on) matching and lower Q_g, improving efficiency in high-frequency synchronous rectifiers; DMC3025LSD delivers higher current but sacrifices thermal performance due to non-enhanced SO-8 packaging.

Availability

IRF7379PBF is available at Aetrix Electronics and suitable for brushless DC motor drivers, synchronous buck converters, H-bridge DC motor controllers, and USB-C power delivery sink circuits requiring stable component supply and long-term industrial availability.

Supply support for IRF7379PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET® innovation.

The IRF7379PBF belongs to the HEXFET® Fifth Generation Power MOSFET product line, engineered for high-efficiency, space-constrained DC-DC conversion and motor drive applications demanding matched complementary switching.

FAQ

What is the maximum safe operating temperature for IRF7379PBF?

The IRF7379PBF has a specified junction temperature range of –55°C to +150°C. Its absolute maximum continuous power dissipation is 2.5 W at 25°C ambient, derating linearly at 0.02 W/°C above that. Thermal design must ensure T_J stays ≤150°C under worst-case load, considering R_θJA = 50 °C/W and PCB copper area.

Can IRF7379PBF be used in a bootstrap-gated high-side N-channel configuration?

No - IRF7379PBF integrates a P-channel device for high-side use, eliminating the need for bootstrap circuitry. Its P-channel is designed for direct gate drive referenced to its source (S2), making it suitable for high-side switches without floating gate drivers or charge pumps.

Does IRF7379PBF require external gate resistors for reliable switching?

Yes - although not mandatory, a series gate resistor (typically 5–22 Ω) is recommended to dampen ringing, limit peak gate current, and control dV/dt during switching. This is especially important given the device's low Q_g and fast t_r/t_f, which increase susceptibility to parasitic oscillation in high-speed layouts.

Is the body diode in IRF7379PBF suitable for synchronous rectification?

Yes - both channels feature fully rated, fast-recovery body diodes (t_rr = 71 ns N-ch, 80 ns P-ch; Q_rr = 56 nC / 66 nC). These are characterized for hard commutation and support synchronous rectification in buck converters, provided gate timing avoids shoot-through and accounts for diode reverse recovery behavior.

IRF7379PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 5.8A, 4.3A

Rds On (Max) @ Id, Vgs:: 45mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 520pF @ 25V

Power - Max:: 2.5W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7379PBF FAQ

1.How can I place an order for IRF7379PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7379PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7379PBF reliable?

The price and inventory of IRF7379PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7379PBF is usually 5 days.

3.What payment methods are accepted for IRF7379PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7379PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7379PBF?

IRF7379PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7379PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7379PBF?

For technical support, including IRF7379PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7379PBF requirements.

6.How does Aetrix verify that IRF7379PBF is sourced from the original manufacturer or authorized distributors?

All IRF7379PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7379PBF meets industry standards.

7.What is the process for return or replacement of IRF7379PBF?

All IRF7379PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7379PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7379PBF part is unused and in its original packaging.

Return procedure for IRF7379PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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