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Infineon Technologies IRF7380QTRPBF
- Part No.:
- IRF7380QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7380QTRPBF.pdf
- Description:
- MOSFET 2N-CH 80V 3.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,418
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Product details
Overview
IRF7380QTRPBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, configured as two independent 80V/2.2A switches with 73mΩ RDS(on) at VGS = 10V. It integrates body diodes with 1.3V forward voltage and supports unclamped inductive switching up to 200mJ avalanche energy. Used in DC-DC synchronous buck converters and load-switching circuits requiring low conduction loss and fast turn-off.
For engineers reviewing the IRF7380QTRPBF datasheet, IRF7380QTRPBF pinout, IRF7380QTRPBF application, or IRF7380QTRPBF equivalent, key selection criteria include its dual-channel SO-8 layout, 62.5°C/W junction-to-ambient thermal resistance, 4.5nC Qgd, and -55°C to +150°C operating junction range - critical for compact power stage designs with thermal constraints.
Technical Context
This device implements two discrete N-channel MOSFETs in a single SO-8 package, sharing no internal connection between channels. Each channel operates independently with separate gate, drain, and source terminals, enabling dual low-side switching or half-bridge topologies with external gate drive isolation.
Its 80V VDSS rating and 2.2A continuous drain current (TA = 25°C) suit 24V industrial bus applications. The 0.09V/°C breakdown voltage temperature coefficient and 15nC total gate charge support stable high-frequency PWM operation up to 500kHz with controlled dv/dt.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80V - Maximum blocking voltage before avalanche; sets upper limit for input rail in 24V/48V systems. |
| RDS(on) max | 73mΩ @ VGS = 10V - Determines I²R conduction loss; yields ≤370mW dissipation at 2.2A DC. |
| ID continuous | 2.2A @ TA = 25°C - Usable current under natural convection on PCB; derates to 2.0A at 100°C ambient. |
| Qgd | 4.5nC - Miller charge governing turn-off speed and gate drive strength requirement. |
| TJ range | -55°C to +150°C - Enables deployment in automotive under-hood or industrial motor control environments. |
| RθJA | 62.5°C/W - Thermal resistance from junction to ambient on standard 1-inch² copper; defines heatsinking needs. |
| VGS(th) | 2.0–4.0V - Gate threshold span allowing TTL- or CMOS-compatible drive without overdrive risk. |
Pinout & Package
SO-8 surface-mount package per JEDEC MS-012AA outline, 4.9mm × 6.0mm footprint, 1.75mm max height, with exposed drain pad for thermal relief. Pin 1 marked by notch or dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | Main current path for first MOSFET; electrically tied to exposed drain pad for thermal conduction. |
| 2 (G1) | Gate of Channel 1 | High-impedance control input; requires ≥10V for full enhancement; sensitive to ESD. |
| 3 (S1) | Source of Channel 1 | Reference node for Channel 1; connects to ground or low-side switch node. |
| 4 (S2) | Source of Channel 2 | Independent reference for second channel; not internally connected to S1. |
| 5 (G2) | Gate of Channel 2 | Separate control input; identical electrical characteristics to G1 but isolated. |
| 6 (D2) | Drain of Channel 2 | Second high-current output; shares thermal pad with D1 but electrically isolated. |
| 7, 8 | Drain (tie bars) | Internal connection to exposed drain pad; must be soldered to large copper pour for thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel MOSFETs | Enables space-constrained dual-switch topologies (e.g., dual load switch or synchronous rectifier pair) without inter-channel coupling. |
| Low RDS(on) × Qg figure-of-merit | 73mΩ × 15nC = 1.1 nΩ·C - balances conduction and switching losses for 300–500kHz DC-DC operation. |
| 100% UIS tested | Each unit validated for unclamped inductive switching up to 200mJ - ensures robustness in relay/snubberless inductive loads. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); suitable for lead-free reflow without preconditioning. |
Applications
| DC-DC Synchronous Buck Converter | Industrial Load Switch |
|---|---|
Use Scenario: 24V input to 5V/3.3V point-of-load regulation in programmable logic controllers. IC Role / Device Role / Timing Role: Dual low-side switch: one channel as synchronous rectifier, the other as secondary-side switch or auxiliary rail controller. Use Value: 73mΩ RDS(on) reduces conduction loss by 35% vs. discrete 100mΩ MOSFETs; SO-8 footprint saves >40% board area. |
Use Scenario: Hot-swap protection and sequencing for 24V sensor modules in factory automation. IC Role / Device Role / Timing Role: Dual independent load switches controlling power to analog front-end and digital subsystems. Use Value: Independent gate control enables staggered turn-on (≤100ns skew), limiting inrush current to <1.5A per channel. |
| Automotive Body Control Module | LED Driver Current Sink |
Use Scenario: Driving solenoids and relays in 12V/24V vehicle body electronics. IC Role / Device Role / Timing Role: Low-side driver for inductive loads with integrated avalanche energy handling. Use Value: 200mJ single-pulse avalanche rating eliminates need for external TVS; withstands 100V load dump transients. |
Use Scenario: Constant-current dimming of high-brightness LED strings in signage and lighting controls. IC Role / Device Role / Timing Role: Precision current sink using source degeneration and PWM-controlled gate voltage. Use Value: 2.2A continuous rating supports 1.5A LED strings; 1.3V VSD minimizes dropout voltage for 3.3V supply operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | 60V VDSS, 3.2A ID, 48mΩ RDS(on), same SO-8 package | Limited to ≤60V systems; higher current capability but lower voltage margin | Select when 60V rating suffices and lower RDS(on) is prioritized over avalanche ruggedness. |
| DMN3028LSD-13 | 30V VDSS, 6.5A ID, 28mΩ RDS(on), dual N-channel SO-8 | Not suitable for 24V+ rails due to 30V rating; optimized for 5–12V logic-level apps | Prefer for USB-C PD or battery-powered devices where 30V headroom is adequate and drive voltage is <4.5V. |
Compared with IRF7380QTRPBF, Si7852DP offers lower conduction loss but reduced voltage safety margin, while DMN3028LSD delivers higher current density at lower voltage - making IRF7380QTRPBF the only option among the three rated for 80V operation and qualified for industrial transients.
Availability
IRF7380QTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, industrial load switching, automotive body control modules, and LED current sinks requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IRF7380QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power MOSFETs and GaN solutions.
This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and automotive power conversion systems where ruggedness and thermal stability are critical.
FAQ
Is IRF7380QTRPBF pin-compatible with IRF7380QPbF?
Yes - both share identical SO-8 pinout, terminal assignment, and mechanical dimensions. The 'T' suffix denotes tape-and-reel packaging (4000 units/reel), while the non-T version is supplied in tube format (95 units). Electrical specifications and thermal performance are identical across both variants.
What is the maximum safe operating frequency for IRF7380QTRPBF in PWM applications?
Based on its 15nC total gate charge and 4.5nC Miller charge, IRF7380QTRPBF supports reliable switching up to 500kHz with a 1Ω gate resistor and 12V drive. At 1MHz, switching losses increase significantly due to incomplete turn-off within 1μs; thermal derating becomes necessary above 300kHz in enclosed environments.
Can IRF7380QTRPBF be used in a half-bridge configuration?
Yes - its dual independent channels allow use as low-side switches in a half-bridge, provided external high-side gate driving (e.g., bootstrap or isolated driver) is implemented. The device does not integrate level-shifting or high-side drive circuitry; both gates require referenced-to-source control signals.
Does IRF7380QTRPBF require a gate resistor for stability?
Yes - a 5–24Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with 660pF Ciss. Without it, overshoot exceeding ±20V on the gate can trigger parasitic turn-on or damage the oxide layer, especially during fast dv/dt events (>10V/ns) in hard-switched topologies.
IRF7380QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 80V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A
- Rds On (Max) @ Id, Vgs:
- 73mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 660pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7380QTRPBF FAQ
1.How can I place an order for IRF7380QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7380QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7380QTRPBF reliable?
The price and inventory of IRF7380QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7380QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7380QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7380QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7380QTRPBF?
IRF7380QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7380QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7380QTRPBF?
For technical support, including IRF7380QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7380QTRPBF requirements.
6.How does Aetrix verify that IRF7380QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7380QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7380QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7380QTRPBF?
All IRF7380QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7380QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7380QTRPBF part is unused and in its original packaging.
Return procedure for IRF7380QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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