Infineon Technologies IRF7380TRPBF

Overview

IRF7380TRPBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, designed for high-frequency DC-DC converters and synchronous rectification. It features 80 V V_DSS, 73 mΩ R_DS(on) at V_GS = 10 V, 3.6 A continuous drain current, and low Q_gd (4.5 nC) to minimize switching losses in hard-switched topologies.

For engineers reviewing the IRF7380TRPBF datasheet, IRF7380TRPBF pinout, IRF7380TRPBF application, or IRF7380TRPBF equivalent, key selection criteria include its fully characterized C_oss (110 pF typ.) and C_oss,eff (140 pF), avalanche-rated operation (2.2 A I_AS, 75 mJ E_AS), and SO-8 dual-channel layout enabling compact half-bridge or dual-switch configurations.

Technical Context

This device integrates two independent N-channel MOSFETs in a single SO-8 package with isolated source terminals (S1, S2) and shared drain leads (D1, D2) - enabling use in synchronous buck, active clamp, or dual-phase converter stages. Its low gate charge (Q_g = 15–23 nC) and optimized Q_gd/Q_gs ratio support efficient 500 kHz–1 MHz switching without excessive drive loss.

The body diode exhibits t_rr = 50 ns and Q_rr = 110 nC at I_F = 2.2 A, making it suitable for freewheeling paths where reverse recovery behavior directly impacts efficiency and EMI. Thermal resistance R_θJA = 62.5 °C/W (PCB mount) and R_θJL = 42 °C/W enable predictable junction temperature estimation under conduction and switching stress.

Key Specifications

Pinout & Package

IRF7380TRPBF uses an SO-8 surface-mount package (12.4 × 14.4 mm, 1.75 mm height) with gull-wing leads and dual-MOSFET internal configuration. Pin 1 is Gate 1 (G1), Pin 2 is Drain 1 (D1), Pin 3 is Source 2 (S2), Pin 4 is Gate 2 (G2), Pin 5 is Drain 2 (D2), Pin 6 is Source 1 (S1), Pin 7 is Drain 1 (D1), Pin 8 is Drain 2 (D2). Drains are internally paralleled per channel (D1/D7 and D2/D5).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel power MOSFET applications.

Compared with Si7850DP-T1-GE3 and IPD95R1K2P7ATMA1, IRF7380TRPBF uniquely balances 80 V rating, dual-channel integration, and sub-100 mΩ R_DS(on) in SO-8 - making it optimal for space-constrained, medium-voltage DC-DC converters requiring matched switching characteristics.

Availability

IRF7380TRPBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, synchronous rectifiers, and active clamp forward converters requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRF7380TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRF7380TRPBF belongs to Infineon's HEXFET^® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies where low gate charge, controlled capacitance, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for IRF7380TRPBF at 100°C ambient?

The maximum continuous drain current is 2.9 A at T_A = 100°C with PCB mount, derived from thermal derating of the 3.6 A rating at 25°C using R_θJA = 62.5 °C/W. This value assumes no forced airflow and standard 1-inch² copper pad per drain lead.

Can IRF7380TRPBF be used in a half-bridge configuration without external level-shifting circuitry?

No - Channel 2's source (S2) is not internally tied to the high-side reference; it is an isolated terminal requiring a floating gate driver referenced to S2. External bootstrap or isolated gate drivers are mandatory for high-side operation in half-bridge topologies.

How does the effective output capacitance (C_oss,eff) differ from typical C_oss in design calculations?

C_oss,eff = 140 pF is a fixed-value approximation calibrated to match the actual energy stored in C_oss during V_DS ramp-up from 0 to 80% of V_DSS. Unlike static C_oss = 110 pF (measured at V_DS = 25 V), C_oss,eff enables accurate turn-on loss estimation in hard-switched converters.

Is the body diode in IRF7380TRPBF suitable for reverse conduction in synchronous rectification?

Yes - the intrinsic body diode has V_SD = 1.3 V max at I_S = 2.2 A and t_rr = 50 ns, enabling reliable freewheeling in synchronous buck and flyback converters. However, its Q_rr = 110 nC necessitates careful dead-time tuning to avoid cross-conduction.