Infineon Technologies IRF7389

Overview

IRF7389 from Infineon Technologies is a dual N- and P-channel MOSFET in a single SO-8 package, configured for complementary half-bridge switching. It delivers 5.8 A continuous drain current (N-ch) and −4.9 A (P-ch), with R_DS(on) of 0.020 Ω @ V_GS = 10 V (N) and 0.035 Ω @ V_GS = −10 V (P), operating up to 30 V V_DS. Used in DC-DC synchronous buck converters and H-bridge motor drivers.

For engineers reviewing the IRF7389 datasheet, IRF7389 pinout, IRF7389 application, or IRF7389 equivalent, key selection criteria include gate threshold voltage matching (V_GS(th) = 1.0–2.5 V N-ch / −1.0–−2.5 V P-ch), normalized R_DS(on) vs. temperature stability, avalanche energy rating (E_AS = 25 mJ N-ch / 18 mJ P-ch), and SO-8 thermal resistance (R_θJA = 50 °C/W).

Technical Context

This dual MOSFET integrates independently controllable N- and P-channel silicon devices on a common die substrate, enabling complementary drive without external level-shifting. Its gate charge profile (Q_g = 12 nC N-ch / 10 nC P-ch at V_GS = 10 V) supports 500 kHz switching in high-efficiency point-of-load regulators.

The device uses TrenchMOS technology with optimized cell pitch and trench depth to achieve low gate-to-drain charge (Q_gd = 3.3 nC N-ch / 2.7 nC P-ch), reducing Miller-induced shoot-through risk in bridge topologies. Junction-to-case thermal resistance is 3.0 °C/W, supporting direct PCB copper pour heatsinking.

Key Specifications

Pinout & Package

IRF7389 is housed in a standard SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin 1 is Gate 1 (N-channel), Pin 2 is Source 1 (N-channel), Pin 3 is Drain 1 (N-channel), Pin 4 is Drain 2 (P-channel), Pin 5 is Source 2 (P-channel), Pin 6 is Gate 2 (P-channel), Pins 7 and 8 are internally connected to Drain 1/Drain 2 and tied to the exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Compared with Si7852DP and DMC2038LSD, IRF7389 offers superior avalanche energy handling and broader V_GS(th) range-critical for robust operation in motor control and industrial surge environments-while maintaining competitive R_DS(on) and gate drive simplicity.

Availability

IRF7389 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, USB-C power delivery systems, and LED lighting requiring stable component supply across production lifecycles.

Supply support for IRF7389 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOS™ product line, which includes IRF7389, is engineered for high-efficiency power conversion in space-constrained applications, emphasizing low R_DS(on), fast switching, and ruggedness in harsh electrical environments.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IRF7389 has a rated maximum junction temperature of 150 °C under continuous DC operation. Derating is required above 25 °C ambient; at 70 °C ambient with 200 mm² 2-oz copper, the device sustains 5.8 A (N) and −4.9 A (P) with ≤125 °C junction rise, verified per JEDEC JESD51-2 thermal test board conditions.

Can IRF7389 be used in a synchronous boost converter configuration?

No-IRF7389's internal topology connects both drains to the same thermal pad and pins 3/4, making it unsuitable for boost topologies requiring independent high-side and low-side switches. It is designed exclusively for buck, half-bridge, and complementary switching where shared drain is acceptable.

Is the SO-8 thermal pad electrically isolated from the package leads?

No-the exposed thermal pad is internally connected to both drain terminals (pins 3 and 4) and must be soldered to a PCB copper pour tied to the system drain net. Electrical isolation would require a custom thermally conductive but electrically insulating interface, which is not supported by the device's construction.

Does IRF7389 support 3.3 V gate drive for both channels simultaneously?

Yes-the N-channel turns on fully at V_GS = 4.5 V (R_DS(on) = 0.028 Ω), and the P-channel achieves R_DS(on) = 0.055 Ω at V_GS = −4.5 V. With 3.3 V logic, the N-ch operates in linear region (R_DS(on) ≈ 0.08 Ω), while the P-ch remains functional with −3.3 V drive, enabling basic on/off control in low-speed applications.