Infineon Technologies IRF7389PBF

Overview

IRF7389PBF from Infineon Technologies is a dual N- and P-channel MOSFET in a single SO-8 package, configured as a complementary pair for half-bridge or synchronous rectification circuits. It features 30 V drain-source voltage rating, 5.8 A continuous drain current (N-ch) and –4.9 A (P-ch), with R_DS(on) of 0.020 Ω (N) and 0.035 Ω (P) at V_GS = 10 V, and is rated for 1.8 W power dissipation at T_A = 25°C.

For engineers reviewing the IRF7389PBF datasheet, IRF7389PBF pinout, IRF7389PBF application, or IRF7389PBF equivalent, this device is selected for compact DC-DC converters, motor drive H-bridge legs, and load-switching topologies where complementary channel pairing, low conduction loss, and SO-8 thermal performance are critical.

Technical Context

This dual MOSFET integrates independently controllable N- and P-channel enhancement-mode silicon devices on one die. The N-channel section delivers low R_DS(on) (20 mΩ @ 10 V) with fast turn-on (Q_g = 12 nC), while the P-channel provides matched gate threshold (–3.0 V to –4.5 V) and symmetric switching behavior under negative V_GS. Both channels share common source terminals in the SO-8 layout, enabling high-side P-ch / low-side N-ch configurations without external isolation.

Thermal design leverages the SO-8 package's 62°C/W junction-to-ambient resistance (R_θJA) and supports pulsed operation up to 150°C junction temperature. Avalanche energy rating is 25 mJ (N-ch) and 20 mJ (P-ch), confirming robustness against inductive switching transients in brushed DC motor drives.

Key Specifications

Pinout & Package

IRF7389PBF uses an industry-standard SO-8 surface-mount package with exposed drain pad for enhanced thermal conduction. Pin numbering follows standard top-view orientation (pin 1 at top-left corner).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with Si7851DP and DMC2038LSD, IRF7389PBF offers superior avalanche ruggedness and tighter R_DS(on) matching-making it optimal for motor control and automotive BCMs where reliability under electrical stress is prioritized over marginal gate charge reduction.

Availability

IRF7389PBF is available at Aetrix Electronics and suitable for brushed DC motor control, 24 V synchronous buck converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for IRF7389PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q standards.

IRF7389PBF belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-reliability, space-constrained power conversion and motor drive applications demanding matched complementary characteristics and robust transient handling.

FAQ

What is the maximum gate-source voltage rating for each channel?

The N-channel gate withstands +20 V, and the P-channel gate withstands –20 V, as specified in the absolute maximum ratings table. Exceeding ±20 V risks oxide breakdown. Recommended operating range is –15 V to +15 V for reliable lifetime performance, with typical drive at +10 V (N) and –10 V (P) for full enhancement.

Can IRF7389PBF be used in a back-to-back configuration for reverse polarity protection?

Yes - its shared-source SO-8 layout enables direct back-to-back connection without external routing. With proper gate biasing (N-ch gate pulled to VIN, P-ch gate grounded), it blocks reverse current flow while maintaining low forward voltage drop (<0.15 V at 2 A), meeting USB-C PD and industrial fieldbus requirements.

Is IRF7389PBF suitable for 12 V automotive battery applications?

Yes - it is AEC-Q101 qualified and rated for operation from –55°C to +150°C junction temperature. Its 30 V V_DS provides sufficient margin for automotive load-dump transients (up to 40 V), and its avalanche rating ensures survival during inductive kick in solenoid and relay drivers.

How does the SO-8 exposed drain pad affect PCB layout?

The exposed drain pads (pins 3 and 4) must be soldered to large, thermally optimized copper areas (≥200 mm² per channel) with ≥4 thermal vias to internal ground planes. This reduces junction-to-board thermal resistance by ~30%, enabling 1.8 W continuous dissipation at 25°C ambient - critical for sustained motor stall or overload conditions.