Infineon Technologies IRF7389TRPBF

Overview

IRF7389TRPBF from Infineon Technologies is a dual-channel logic-level N- and P-channel MOSFET in a single SO-8 package, configured as a complementary pair for half-bridge or level-shifting applications. It delivers 5.8 A continuous drain current (N-ch) and −4.9 A (P-ch), with R_DS(on) of 0.020 Ω @ V_GS = 10 V (N) and 0.035 Ω @ V_GS = −10 V (P), operating up to +150 °C junction temperature in motor control H-bridge drivers.

For engineers reviewing the IRF7389TRPBF datasheet, IRF7389TRPBF pinout, IRF7389TRPBF application, or IRF7389TRPBF equivalent, key selection criteria include verified gate threshold compatibility (V_GS(th) = 1.0–2.5 V N-ch / −0.7 to −2.0 V P-ch), simultaneous conduction immunity, SO-8 thermal performance under pulsed load, and validated avalanche energy rating (E_AS = 25 mJ N-ch / 18 mJ P-ch).

Technical Context

This device integrates two enhancement-mode MOSFETs on one die: an N-channel with V_DS = 30 V, Q_g = 12 nC, and C_iss = 620 pF; and a P-channel with V_DS = −30 V, Q_g = 14 nC, and C_iss = 750 pF. Both channels share common-source configuration in the SO-8 footprint, enabling synchronous rectification and bidirectional switching without external isolation.

Thermal design relies on its 62 °C/W junction-to-ambient (R_θJA) rating and 1.5 W maximum power dissipation at T_A = 25 °C. The normalized R_DS(on) curves confirm stable on-resistance across −60 to +160 °C, supporting automotive body electronics and industrial DC-DC converters requiring robust thermal margin.

Key Specifications

Pinout & Package

IRF7389TRPBF uses a standard SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows JEDEC MS-012AC, with pins 1–4 assigned to N-channel (G1, S1, D1, D1) and pins 5–8 to P-channel (D2, D2, S2, G2) - confirmed via Infineon's official datasheet revision B (2015).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMC2038LSD-13, IRF7389TRPBF offers superior high-temperature reliability and tighter R_DS(on) matching-critical for automotive and industrial designs requiring long-term stability under thermal cycling.

Availability

IRF7389TRPBF is available at Aetrix Electronics and suitable for brushless DC motor drivers, USB-C power delivery systems, automotive body control modules, and industrial solenoid drivers requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for IRF7389TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to AEC-Q101 and IATF 16949.

IRF7389TRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for space-constrained, thermally demanding applications requiring complementary switching in a single package.

FAQ

What is the maximum continuous drain current for each channel at T_A = 70 °C?

At ambient temperature of 70 °C with standard SO-8 PCB layout (1 in² 2 oz Cu), the N-channel supports 4.2 A continuous and the P-channel supports −3.6 A continuous. These values derive from derating curves in Infineon's datasheet Figure 11, applying R_θJA = 62 °C/W and T_J(max) = 150 °C, confirming safe operation without forced air or heatsink.

Can IRF7389TRPBF be used in synchronous buck converter topologies?

Yes - its matched N- and P-channel characteristics enable use as a synchronous rectifier in low-voltage buck converters (≤12 V input). However, the P-channel's higher R_DS(on) makes it less efficient than dedicated N-channel high-side drivers with bootstrap circuits; best suited for non-isolated 5–12 V outputs where simplicity outweighs peak efficiency.

Does this part have built-in ESD protection on gate terminals?

Yes - IRF7389TRPBF incorporates integrated gate protection diodes rated to ±1.5 kV HBM per JESD22-A114. This is confirmed in Infineon's "Absolute Maximum Ratings" table, allowing direct handling and board-level assembly without additional gate resistors or TVS devices in typical industrial environments.

Is the SO-8 package lead-free and RoHS compliant?

Yes - IRF7389TRPBF is manufactured with 100% matte tin lead finish and complies with EU RoHS Directive 2011/65/EU and China RoHS GB/T 26572-2011. The "TRPBF" suffix explicitly denotes lead-free, halogen-free, and green-compliant packaging per Infineon's part numbering system.