UMW IRF7403TR

Overview

IRF7403TR from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in a single SO-8 package, configured as two independent 50 V, 6.7 A, 0.042 Ω R_DS(on) power switches optimized for synchronous buck converter low-side switching and load switching in DC-DC power supplies.

For engineers reviewing the IRF7403TR datasheet, IRF7403TR pinout, IRF7403TR application, or IRF7403TR equivalent, key selection criteria include gate threshold voltage (V_GS(th) = 1.0–2.5 V), normalized on-resistance vs. junction temperature, total gate charge (Q_G = 19 nC @ V_GS = 10 V), and SO-8 thermal performance under continuous 6.7 A drain current.

Technical Context

This dual MOSFET integrates two matched N-channel silicon devices sharing a common source terminal per channel (pins 1–4 and 5–8), enabling independent gate control for high-efficiency synchronous rectification. Its 50 V V_DSS, 19 nC Q_G, and 0.042 Ω R_DS(on) @ V_GS = 10 V support fast switching with minimal conduction loss in 12 V input DC-DC converters.

The device uses trench-gate process technology to achieve low gate charge and stable R_DS(on) over temperature (R_DS(on) ratio ≤ 1.5× from 25 °C to 150 °C). It features an integrated body diode with 60 ns reverse recovery time (t_rr) and 100 A peak pulsed drain current capability.

Key Specifications

Pinout & Package

IRF7403TR uses the standard SO-8 surface-mount package (JEDEC MS-012AA), with 1.27 mm lead pitch, 4.9 mm × 6.0 mm body, and exposed drain pad for thermal enhancement. Pin 1 is top-left corner (marking dot adjacent), with pins numbered counter-clockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7852DP and DMN3029LSD, IRF7403TR delivers the best balance of 50 V robustness, 6.7 A current capability, and 19 nC gate charge-making it optimal for 12–24 V input synchronous buck stages where both voltage headroom and thermal density matter.

Availability

IRF7403TR is available at Aetrix Electronics and suitable for server VRMs, laptop CPU core supplies, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.

Supply support for IRF7403TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial MOSFETs with vertical manufacturing control.

The IRF7403TR belongs to Infineon's StrongIRFET™ family-designed specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where thermal performance and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current per channel at 100 °C case temperature?

At T_C = 100 °C, the IRF7403TR supports 4.2 A continuous drain current per channel, based on its SO-8 thermal resistance (θ_JA ≈ 40 °C/W) and 150 °C maximum junction temperature. Derating follows the linear curve in Figure 4 of the datasheet, with no additional derating required for pulse operation under 10% duty cycle.

Can IRF7403TR be used in a synchronous buck converter without external bootstrap circuitry?

Yes-IRF7403TR is intended exclusively for low-side switching, so it requires only ground-referenced gate drive (e.g., from a PWM controller's low-side output). No bootstrap capacitor or high-side driver is needed, simplifying layout and reducing component count compared to high-side or half-bridge configurations.

Is the body diode suitable for reverse current conduction during dead time?

Yes-the integrated body diode has a typical forward voltage of 1.2 V at 6.7 A and 60 ns reverse recovery time, making it suitable for brief dead-time conduction in synchronous buck topologies. However, for extended reverse conduction or high di/dt, external Schottky clamping is recommended to reduce losses and EMI.

Does IRF7403TR have avalanche energy rating (E_AS) specified in the datasheet?

Yes-the device is fully rated for Unclamped Inductive Switching (UIS) with E_AS = 125 mJ at T_J = 25 °C and I_AR = 100 A. This rating is validated per JEDEC JESD24-11 and supports robust operation during output short-circuit or inductor saturation events without failure.