Vishay Siliconix IRF740LCPBF-BE3
- Part No.:
- IRF740LCPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF740LCPBF-BE3.pdf
- Description:
- MOSFET N-CH 400V 10A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:975
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF740LCPBF-BE3 from Vishay Siliconix is a 400 V, 10 A N-channel power MOSFET in TO-220AB package, featuring 0.55 Ω RDS(on) at VGS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits.
For engineers reviewing the IRF740LCPBF-BE3 datasheet, IRF740LCPBF-BE3 pinout, IRF740LCPBF-BE3 application, or IRF740LCPBF-BE3 equivalent, key selection criteria include its enhanced 30 V gate-source voltage rating, low Ciss/Coss/Crss, ultra-low Qg, and proven ruggedness in unclamped inductive switching.
Technical Context
This device employs Vishay's LCDMOS technology to achieve significantly lower gate charge versus conventional MOSFETs without added cost-enabling reduced gate drive requirements and lower switching losses. Its 400 V VDS rating and 10 A continuous drain current support operation in offline SMPS and industrial AC/DC front-ends.
The IRF740LCPBF-BE3 integrates a robust body diode with 380–570 ns reverse recovery time and 2.8–4.2 μC Qrr, and is rated for repetitive avalanche energy (13 mJ) and single-pulse avalanche (520 mJ), confirming suitability for hard-switched topologies with inductive loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports 380 VAC rectified input rails and flyback/snubber clamp voltages in offline converters |
| RDS(on) @ VGS = 10 V | 0.55 Ω - enables ≤ 55 W conduction loss at 10 A, suitable for medium-power switching stages |
| Qg (max) | 39 nC - reduces gate driver power demand and allows use of low-current drivers (e.g., TC4420) |
| Ciss | 1100 pF - contributes to stable high-frequency gate control with minimal Miller-induced oscillation risk |
| EAS | 520 mJ - withstands single-pulse inductive energy spikes without failure in relay/motor drive snubbers |
| TJ range | −55 °C to +150 °C - qualified for industrial and extended-temperature embedded power systems |
Pinout & Package
IRF740LCPBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 1.1 N·m screw torque rating. Thermal resistance RthJC is 1.0 °C/W, enabling 125 W dissipation at TC = 25 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level gate drive; ±30 V max rating prevents ESD damage during handling |
| D (Drain) | High-side power output | Connected to internal die substrate and metal tab-requires electrical isolation when mounted to heatsink |
| S (Source) | Power return / reference node | Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge (39 nC) | Reduces gate driver IC power consumption and simplifies PCB layout by minimizing gate loop inductance sensitivity |
| Enhanced VGS rating (±30 V) | Improves immunity to transient overvoltage during hot-plug or fault conditions without external clamping |
| Reduced Ciss, Coss, Crss | Enables clean turn-on/turn-off waveforms up to ~2 MHz switching frequency in resonant LLC designs |
| Repetitive avalanche rated | Supports reliable operation in non-synchronous buck, flyback, and half-bridge topologies with unclamped inductive loads |
| RoHS-compliant & halogen-free (BE3 suffix) | Fulfills IEC 61249-2-21 and JEDEC JS709C requirements for environmentally regulated industrial and telecom equipment |
Applications
| Switch-Mode Power Supply | DC-DC Converter |
|---|---|
|
Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converter operating at 65–130 kHz. IC Role / Device Role: High-voltage power switch controlling energy transfer from AC line to isolated output. Use Value: 0.55 Ω RDS(on) and 39 nC Qg minimize conduction and switching losses, improving efficiency >87% at full load. |
Use Scenario: High-side switch in 12 V–48 V input, 3.3 V/5 V/12 V output non-isolated buck converter for server VRMs. IC Role / Device Role: Synchronous rectifier or high-side FET in multiphase step-down regulator. Use Value: Low Coss (190 pF) and fast body diode (trr = 380–570 ns) reduce dead-time losses and improve light-load efficiency. |
| Motor Drive | Industrial Lighting |
|
Use Scenario: Half-bridge leg in 200–500 W BLDC motor controller for HVAC blowers or pumps. IC Role / Device Role: Low-side or high-side switching element handling 10 A peak phase current. Use Value: Repetitive avalanche rating (IAR = 10 A, EAR = 13 mJ) ensures robustness against back-EMF transients during commutation. |
Use Scenario: Dimmable LED driver primary switch in 50–150 W constant-current topology with TRIAC leading-edge dimming. IC Role / Device Role: Main switching transistor in quasi-resonant (QR) flyback stage. Use Value: 400 V VDS safely handles 340 VDC bus plus 100 V margin for line surges and ringing, meeting IEC 61000-4-5 Level 3. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDS, 4 A ID, 45 nC Qg, TO-220FP package (full-pack) | Lower current rating and higher Qg; better suited for <100 W designs with tighter space constraints | Choose when higher voltage margin (500 V) is prioritized over current capability and gate drive efficiency |
| IXTP10N50D2 | 500 V VDS, 10 A ID, 42 nC Qg, D2PAK surface-mount package | Same current rating but SMT footprint; lacks repetitive avalanche rating per datasheet | Prefer for automated assembly and thermal performance on copper-clad PCBs, but verify avalanche robustness separately |
Compared with STP4NK50ZFP and IXTP10N50D2, the IRF740LCPBF-BE3 offers superior gate charge efficiency (39 nC), confirmed repetitive avalanche capability, and through-hole TO-220AB mechanical stability-making it optimal for prototyping, repair, and medium-power industrial power stages where reliability under transient stress is critical.
Availability
IRF740LCPBF-BE3 is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drives, and industrial lighting systems requiring stable component supply, long-term lifecycle support, and RoHS/halogen-free compliance.
Supply support for IRF740LCPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF740LCPBF-BE3 belongs to Vishay's LCDMOS low-charge power MOSFET family-engineered to deliver reduced switching losses and improved system efficiency in high-frequency power conversion without increasing cost or complexity.
FAQ
What is the maximum continuous drain current for IRF740LCPBF-BE3 at 100 °C case temperature?
The IRF740LCPBF-BE3 supports 6.3 A continuous drain current at TC = 100 °C, derated linearly from 10 A at 25 °C using a 1.0 W/°C factor. This value is validated per absolute maximum ratings table and reflects safe operation with adequate heatsinking in enclosed industrial enclosures.
Does IRF740LCPBF-BE3 have a fully rated avalanche capability?
Yes, the IRF740LCPBF-BE3 is explicitly rated for repetitive avalanche with IAR = 10 A and EAR = 13 mJ, and single-pulse avalanche EAS = 520 mJ. These values are measured per test condition b (VDD = 50 V, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A) and documented in the Vishay datasheet S21-0853-Rev. C.
What is the gate-source threshold voltage range for IRF740LCPBF-BE3?
The gate-source threshold voltage (VGS(th)) for IRF740LCPBF-BE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range ensures consistent turn-on behavior across temperature and process variation while maintaining noise immunity in noisy power environments.
Is IRF740LCPBF-BE3 compatible with standard TO-220 heatsinks?
Yes, IRF740LCPBF-BE3 uses the industry-standard TO-220AB package with 6–32 or M3 mounting screw compatibility and 1.1 N·m torque specification. Its isolated drain tab allows direct mechanical attachment to heatsinks without additional insulating hardware when electrical isolation is not required.
How does the body diode performance of IRF740LCPBF-BE3 compare to standard power MOSFETs?
The IRF740LCPBF-BE3 body diode has trr = 380–570 ns and Qrr = 2.8–4.2 μC at IF = 10 A and dI/dt = 100 A/μs-significantly faster than legacy 400 V MOSFETs. This reduces switching losses in non-synchronous topologies and improves reliability in freewheeling paths with high di/dt.
IRF740LCPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF740LCPBF-BE3 FAQ
1.How can I place an order for IRF740LCPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF740LCPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF740LCPBF-BE3 reliable?
The price and inventory of IRF740LCPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740LCPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRF740LCPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740LCPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF740LCPBF-BE3?
IRF740LCPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF740LCPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF740LCPBF-BE3?
For technical support, including IRF740LCPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740LCPBF-BE3 requirements.
6.How does Aetrix verify that IRF740LCPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRF740LCPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740LCPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRF740LCPBF-BE3?
All IRF740LCPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF740LCPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF740LCPBF-BE3 part is unused and in its original packaging.
Return procedure for IRF740LCPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF740LCPBF-BE3 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

