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Vishay Siliconix IRF740STRL
- Part No.:
- IRF740STRL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF740STRL.pdf
- Description:
- MOSFET N-CH 400V 10A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,248
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Product details
Overview
IRF740STRL from Vishay Siliconix is a 400 V, 10 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.55 Ω RDS(on) at VGS = 10 V, 63 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor drive half-bridges, and SMPS primary-side switching.
For engineers reviewing the IRF740STRL datasheet, IRF740STRL pinout, IRF740STRL application, or IRF740STRL equivalent, key selection criteria include its 400 V VDS, 125 W TC power dissipation, dV/dt ruggedness (4.0 V/ns), unclamped inductive switching capability (520 mJ EAS), and PCB-mount thermal resistance of 40 °C/W.
Technical Context
This third-generation power MOSFET uses planar silicon technology optimized for high-voltage switching with low conduction loss and robust dynamic performance. Its design integrates a fast-recovery body diode (trr = 370–790 ns, Qrr = 3.8–8.2 μC) and exhibits stable RDS(on) temperature coefficient (0.49 V/°C) across -55 to +150 °C junction range.
The device supports simple gate drive (VGS(th) = 2.0–4.0 V, Rg = 0.8–5.9 Ω) and enables parallel operation due to positive temperature coefficient of on-resistance. It is rated for repetitive avalanche (IAR = 10 A, EAR = 13 mJ) and specified for linear-mode operation under controlled conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - Supports primary-side switching in offline 380 V DC bus and 230 V AC rectified applications without derating. |
| RDS(on) @ VGS = 10 V | 0.55 Ω - Enables ≤ 33 W conduction loss at 10 A continuous drain current under heatsinked conditions. |
| Qg | 63 nC - Determines gate drive power requirement (~1.26 mW per 100 kHz switch with 10 V swing) and influences turn-on/turn-off timing control. |
| EAS | 520 mJ - Allows safe single-pulse energy absorption during unclamped inductive turn-off (e.g., relay/snubberless flyback reset). |
| dV/dt Rating | 4.0 V/ns - Ensures immunity to false triggering during high dv/dt transients in hard-switched topologies. |
| TJ Range | -55 to +150 °C - Validated operation across industrial and extended-temperature embedded power stages. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G-D-S) with drain connected to the large back-side metal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives voltage-controlled signal to modulate channel conductivity; requires <2.0 V threshold to initiate conduction. |
| D (Drain) | High-side power output | Connected to high-voltage rail (up to 400 V); electrically and thermally tied to exposed copper pad for low RthJC = 1.0 °C/W. |
| S (Source) | Power return / reference node | Serves as common return path for load current and gate drive reference; body diode anode is internally connected here. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 10 A IAR, 13 mJ EAR - Enables reliable operation under transient overloads without external clamping in motor drive and UPS circuits. |
| Dynamic dV/dt rating | 4.0 V/ns - Prevents spurious turn-on during rapid voltage transitions in bridge-leg configurations. |
| Fast switching | td(on) = 14 ns, tr = 27 ns, td(off) = 50 ns - Reduces switching losses in 50–200 kHz SMPS designs. |
| Low RDS(on) temperature coefficient | 0.49 V/°C - Supports stable current sharing in paralleled configurations across temperature. |
| RoHS-compliant Pb-free variant | IRF740STRLPbF marking - Meets global environmental compliance requirements without sacrificing electrical performance. |
Applications
| Industrial Motor Drive | Offline SMPS Primary Switch |
|---|---|
|
Use Scenario: Half-bridge inverter driving 1–3 kW induction motors in HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: High-side N-channel switching element in hard-switched topology; handles 400 V DC bus and 10 A peak phase current. Use Value: Repetitive avalanche rating absorbs regenerative energy during abrupt load stops; 0.55 Ω RDS(on) limits conduction loss to <0.55 W at 1 A RMS. |
Use Scenario: Primary-side switch in 150–300 W flyback or forward converter operating from universal AC input. IC Role / Device Role / Timing Role: Main power switch turning on/off 380 V DC link at 65–130 kHz; synchronized with PWM controller. Use Value: 520 mJ EAS withstands leakage inductance spikes without snubber; 63 nC Qg enables efficient gate drive with low-cost 1 A drivers. |
| DC-DC Boost Converter | AC Solid-State Relay |
|
Use Scenario: Step-up stage in solar microinverter DC link or battery management system pre-charge circuit. IC Role / Device Role / Timing Role: Boost switch handling up to 400 V output with 6.3 A continuous current at 100 °C case temperature. Use Value: 125 W TC power rating supports high-efficiency operation with minimal heatsinking; dV/dt immunity prevents false triggering during fast voltage ramp. |
Use Scenario: Bidirectional AC switching element in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET pair (with external anti-parallel diode) replacing mechanical relay contacts. Use Value: Body diode VSD ≤ 2.0 V at 10 A enables low forward drop in half-wave conduction; 150 °C TJ(max) ensures reliability under sustained load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK40ZFP | 400 V, 3.5 A, RDS(on) = 1.4 Ω, Qg = 12 nC, TO-220FP package | Lower current rating and higher on-resistance; smaller package with lower thermal mass | Preferred where space-constrained PCB layout favors through-hole mounting and lower gate drive power is critical. |
| IXTP4N50D2 | 500 V, 4 A, RDS(on) = 1.4 Ω, Qg = 15 nC, TO-220 package | Higher voltage rating but lower current and higher RDS(on); no repetitive avalanche rating | Selected when 500 V margin is required and avalanche robustness is not needed-e.g., low-duty-cycle surge protection. |
Compared with STP4NK40ZFP and IXTP4N50D2, the IRF740STRL delivers higher continuous current (10 A vs. ≤4 A), lower RDS(on) (0.55 Ω vs. ≥1.4 Ω), and verified repetitive avalanche capability-making it uniquely suited for thermally demanding, high-energy switching nodes requiring long-term reliability without external protection.
Availability
IRF740STRL is available at Aetrix Electronics and suitable for industrial motor drives, offline SMPS primary-side switching, and DC-DC boost converters requiring stable component supply, RoHS-compliant sourcing, and tape-and-reel delivery for automated assembly.
Supply support for IRF740STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRF740STRL belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for cost-effective, high-efficiency switching in industrial power conversion and motor control systems.
FAQ
What is the maximum continuous drain current rating for IRF740STRL at 100 °C case temperature?
The IRF740STRL has a maximum continuous drain current (ID) of 6.3 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under real-world heatsinked conditions and must be applied in thermal design calculations alongside RthJC = 1.0 °C/W to ensure junction temperature remains ≤150 °C. The IRF740STRL maintains safe operation within this limit when mounted on appropriate copper area per Vishay's recommended pads.
Does IRF740STRL support gate drive from standard 5 V logic-level controllers?
No, the IRF740STRL is not a logic-level MOSFET: its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, but full enhancement requires VGS = 10 V to achieve the specified RDS(on) of 0.55 Ω. Driving the IRF740STRL with only 5 V results in significantly higher on-resistance (>2 Ω), excessive conduction loss, and potential thermal failure. The IRF740STRL must be driven with a 10–15 V gate-source voltage using a dedicated gate driver or level-shifting circuit.
Is IRF740STRL rated for repetitive avalanche operation, and what are the limits?
Yes, the IRF740STRL is explicitly rated for repetitive avalanche operation: IAR = 10 A and EAR = 13 mJ, with pulse width limited by maximum junction temperature (TJ ≤ 150 °C). These values are validated per test condition b (VDD = 50 V, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A) and apply directly to the IRF740STRL. This capability allows the IRF740STRL to absorb repeated inductive energy spikes in motor drive freewheeling and relay coil suppression without external clamps.
What is the thermal resistance from junction to ambient for IRF740STRL in standard PCB mount?
When mounted on a 1" square FR-4 PCB (per Note e in the datasheet), the IRF740STRL has a maximum junction-to-ambient thermal resistance (RthJA) of 40 °C/W. This value assumes minimum recommended copper pad dimensions (0.420" × 0.355") and defines the worst-case thermal path for natural convection cooling. For forced-air or heatsinked designs, the dominant thermal path is junction-to-case (RthJC = 1.0 °C/W), which applies when the D2PAK drain tab is soldered to a thermally enhanced plane or external heatsink.
How does the body diode performance of IRF740STRL compare to discrete ultrafast diodes?
The IRF740STRL's integrated body diode has trr = 370–790 ns and Qrr = 3.8–8.2 μC at TJ = 25 °C, IS = 10 A, and dI/dt = 100 A/μs-placing it between standard and ultrafast recovery diodes. While not as fast as dedicated 50 ns diodes, its recovery characteristics are sufficient for 100 kHz hard-switched applications. The IRF740STRL body diode VSD ≤ 2.0 V at 10 A provides predictable forward conduction, enabling synchronous rectification in low-frequency boost stages without external diode replacement.
IRF740STRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF740STRL FAQ
1.How can I place an order for IRF740STRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF740STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF740STRL reliable?
The price and inventory of IRF740STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740STRL is usually 5 days.
3.What payment methods are accepted for IRF740STRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740STRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF740STRL?
IRF740STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF740STRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF740STRL?
For technical support, including IRF740STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740STRL requirements.
6.How does Aetrix verify that IRF740STRL is sourced from the original manufacturer or authorized distributors?
All IRF740STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740STRL meets industry standards.
7.What is the process for return or replacement of IRF740STRL?
All IRF740STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF740STRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF740STRL part is unused and in its original packaging.
Return procedure for IRF740STRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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