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Infineon Technologies IRF7410TRPBF-1
- Part No.:
- IRF7410TRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7410TRPBF-1.pdf
- Description:
- MOSFET P-CH 12V 16A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,751
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Product details
Overview
IRF7410TRPBF-1 from Infineon Technologies is a P-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, rated for -12 V drain-source voltage, 7 mΩ RDS(on) at -4.5 V gate drive, -16 A continuous drain current at 25°C, and optimized for low-voltage synchronous buck converter high-side switching in portable power management.
For engineers reviewing the IRF7410TRPBF-1 datasheet, IRF7410TRPBF-1 pinout, IRF7410TRPBF-1 application, or IRF7410TRPBF-1 equivalent, key selection criteria include verified RDS(on) at -4.5 V, SO-8 thermal resistance (50 °C/W), body diode reverse recovery charge (134–201 μC), and industrial-grade MSL1 qualification.
Technical Context
This MOSFET operates as a logic-level P-channel switch with gate threshold voltage between -0.4 V and -0.9 V, enabling direct drive from 3.3 V or 5 V controllers. Its integrated body diode supports bidirectional current flow in DC-DC converters and load-switch configurations.
The device features a normalized on-resistance temperature coefficient of +0.006 V/°C for breakdown voltage and exhibits linear derating above 25°C ambient (20 mW/°C), with safe operating area limited by RDS(on) up to 100 μs pulse width at TJ = 150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for low-voltage battery-side switching |
| RDS(on) @ VGS = -4.5 V | 7 mΩ - Enables ≤120 mW conduction loss at -16 A DC |
| ID @ TA = 25°C | -16 A - Continuous current rating for compact PCB layout with 1-in² copper |
| Qg (typical) | 91 nC - Gate charge determining driver strength requirement for <100 ns switching |
| RθJA | 50 °C/W - Thermal resistance defining heatsink-free operation up to 1.6 W at 70°C ambient |
| VGS(th) | -0.4 to -0.9 V - Ensures turn-on with standard 3.3 V GPIO without level-shifting |
| Qrr | 134–201 μC - Body diode recovery charge impacting synchronous rectifier efficiency |
Pinout & Package
SO-8 surface-mount package per JEDEC MS-012AA outline, 5.0 mm × 4.0 mm footprint, 1.27 mm lead pitch, MSL1 moisture sensitivity, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Drain (D) | Common high-current output node; internally paralleled pins reduce inductance and thermal resistance |
| 6 | Gate (G) | Control input requiring <91 nC charge for full enhancement; sensitive to ESD |
| 7, 8 | Source (S) | Return path for load current; tied to system ground or controller reference in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Industry-standard SO-8 pinout | Enables drop-in replacement across multi-vendor designs without PCB redesign |
| RDS(on) = 7 mΩ @ -4.5 V | Reduces conduction losses by >30% vs. legacy -12 V P-MOSFETs at same gate drive |
| MSL1 industrial qualification | Supports reflow soldering without baking; validated for automotive-grade reliability testing |
| Body diode trr = 97–145 ns | Minimizes shoot-through risk during synchronous switching transitions |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlling battery discharge path with fast gate turn-off. Use Value: 7 mΩ RDS(on) limits voltage drop to <112 mV at 16 A, preserving pack capacity and thermal margin. | Use Scenario: VBUS path control in USB-C source port with programmable current limiting. IC Role / Device Role / Timing Role: Load switch enabling/disabling 5–20 V power delivery under microcontroller command. Use Value: -0.4 to -0.9 V VGS(th) allows direct 3.3 V MCU GPIO control without external level shifter. |
| Point-of-Load DC-DC Converter | Industrial I/O Module Protection |
Use Scenario: High-side synchronous rectifier in 3.3 V or 5 V buck regulator for FPGA or SoC core rails. IC Role / Device Role / Timing Role: Complementary switch paired with N-MOSFET in dual-phase topology. Use Value: 91 nC Qg enables efficient 500 kHz–1 MHz switching with standard gate drivers. | Use Scenario: Overvoltage and reverse-polarity protection for 24 V sensor inputs in PLC backplanes. IC Role / Device Role / Timing Role: Reverse-biased P-MOSFET clamping fault current before fuse activation. Use Value: -12 V VDS rating provides 2× safety margin against 24 V transients per IEC 61000-4-4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 8.5 mΩ @ -4.5 V; Qg = 72 nC; SO-8 | Lower gate charge reduces driver burden but higher on-resistance increases conduction loss | Preferred where switching frequency >1 MHz and gate drive capability is constrained |
| DMN2011UFG-7 | RDS(on) = 6.5 mΩ @ -4.5 V; VDS = -20 V; WDFN-8 | Higher voltage rating and smaller package improve power density but require different layout | Selected when board space is critical and system tolerates -20 V rating with no penalty |
Compared with Si7157DP-T1-GE3 and DMN2011UFG-7, IRF7410TRPBF-1 offers the best balance of ultra-low RDS(on), industry-standard SO-8 compatibility, and proven MSL1 reliability-making it optimal for cost-sensitive, volume-manufactured portable power systems.
Availability
IRF7410TRPBF-1 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, point-of-load DC-DC converters, and industrial I/O module protection requiring stable component supply and long-term manufacturability.
Supply support for IRF7410TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The IRF7410TRPBF-1 belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered specifically for high-efficiency, low-voltage DC-DC conversion and load switching in space-constrained consumer and industrial applications.
FAQ
What is the maximum junction temperature for continuous operation?
The IRF7410TRPBF-1 has a specified junction temperature range of -55°C to +150°C. For continuous operation at rated current, thermal design must ensure junction temperature remains ≤150°C using the 50 °C/W RθJA value and ambient conditions-typically requiring ≥1 in² of 2-oz copper for full -16 A load at 25°C ambient.
Can this MOSFET be used in a high-side switch configuration with 3.3 V logic?
Yes. With a gate threshold voltage of -0.4 V to -0.9 V and guaranteed turn-on at -4.5 V, the IRF7410TRPBF-1 fully enhances using a 3.3 V logic signal pulled low through an open-drain driver or inverter. No level shifter is needed, and typical RDS(on) remains ≤13 mΩ at -2.5 V gate drive.
Does the SO-8 package include exposed drain pads for thermal relief?
No. The IRF7410TRPBF-1 uses a standard SO-8 package (JEDEC MS-012AA) with no exposed thermal pad. Drain pins 1–5 are electrically and thermally connected but rely solely on PCB copper area for heat dissipation-designers must allocate ≥1 in² of 2-oz copper connected via multiple vias to internal planes.
How does the body diode performance compare to discrete Schottky alternatives?
The integrated body diode has VSD = -1.2 V at -2.5 A and trr = 97–145 ns. While less efficient than a Schottky in forward conduction, its controlled reverse recovery minimizes EMI and eliminates external diode count-ideal for synchronous rectification where gate timing precisely manages conduction intervals.
IRF7410TRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 16A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 91 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8676 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
IRF7410TRPBF-1 FAQ
1.How can I place an order for IRF7410TRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7410TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7410TRPBF-1 reliable?
The price and inventory of IRF7410TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7410TRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRF7410TRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7410TRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7410TRPBF-1?
IRF7410TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7410TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7410TRPBF-1?
For technical support, including IRF7410TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7410TRPBF-1 requirements.
6.How does Aetrix verify that IRF7410TRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRF7410TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7410TRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRF7410TRPBF-1?
All IRF7410TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7410TRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7410TRPBF-1 part is unused and in its original packaging.
Return procedure for IRF7410TRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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