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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7416TRPBF-1

Name: IRF7416TRPBF-1
Brand: Infineon Technologies
SKU: IRF7416TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7416TRPBF-1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7416TRPBF-1.pdf

Description:: MOSFET P-CH 30V 10A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7416TRPBF-1 from Infineon Technologies is a -30 V, 10 A P-channel enhancement-mode MOSFET in SO-8 package, designed for high-side load switching and power management in DC-DC converters and battery protection circuits. It features R_DS(on) = 20 mΩ @ V_GS = -10 V, Q_g = 61 nC (typ), and integrated body diode with t_rr = 56 ns (typ).

For engineers reviewing the IRF7416TRPBF-1 datasheet, IRF7416TRPBF-1 pinout, IRF7416TRPBF-1 application, or IRF7416TRPBF-1 equivalent, key selection criteria include guaranteed -30 V V_DS, low gate charge for fast switching in synchronous buck topologies, thermal resistance of 50 °C/W, and industrial-grade MSL1 qualification.

Technical Context

This P-channel MOSFET operates as a high-side switch with gate threshold voltage V_GS(th) = -1.0 to -2.04 V and exhibits negative temperature coefficient for V_(BR)DSS (-0.024 V/°C). Its body diode supports reverse current up to -5.6 A continuous and -45 A pulsed.

Dynamic performance is defined by t_d(on) = 18 ns, t_r = 49 ns, t_d(off) = 59 ns, and t_f = 60 ns under standard test conditions (V_DD = -15 V, R_G = 6.2 Ω), enabling efficient operation in 100–500 kHz DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial rail applications
R_DS(on) @ V_GS = -10 V	20 mΩ (max) - Enables ≤2 W conduction loss at 10 A, suitable for thermally constrained PCB layouts
Q_g	61 nC (typ) - Low gate drive energy requirement reduces driver IC stress and improves efficiency above 200 kHz
I_D @ T_A = 25°C	-10 A - Continuous current rating usable in 5–8 A nominal load designs with derating margin
t_rr	56 ns (typ) - Fast body diode recovery minimizes shoot-through risk in synchronous rectification
R_θJA	50 °C/W - Requires ≥1.5 cm² copper pour for safe operation at full current in still air
E_AS	370 mJ - Avalanche-rated for unclamped inductive switching in motor control and solenoid drivers

Pinout & Package

IRF7416TRPBF-1 is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–3 and 5–7 for enhanced thermal dissipation. Pin 4 is gate (G), pin 8 is source (S).

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,6,7	Drain (D)	Common high-current output node; electrically tied internally; requires thermal pad connection to PCB ground plane
4	Gate (G)	Control input; accepts -10 V to -20 V drive for full enhancement; sensitive to ESD
8	Source (S)	Reference node for gate drive; connects to positive rail in high-side configuration

Key Features

Feature	Design Value
P-channel logic-level compatible	V_GS(th) down to -1.0 V enables direct drive from 3.3 V microcontrollers with adequate margin
RoHS-compliant & halogen-free	Meets IPC-J-STD-609A Class 1 for environmentally regulated industrial and medical equipment
MSL1 moisture sensitivity	Unlimited floor life before reflow; no bake required-reduces manufacturing overhead
Industry-standard SO-8 footprint	Enables multi-source procurement and drop-in replacement across Infineon, Vishay, ON Semi equivalents
Integrated body diode	Rated for -5.6 A continuous source current; eliminates need for external freewheeling diode in buck converters

Applications

Automotive Body Control Module

Industrial PLC Output Stage

Use Scenario: High-side switching of 12 V solenoids and lamps in BCMs with PWM dimming and short-circuit protection.

IC Role / Device Role / Timing Role: Primary power switch controlling load current path; gate driven by MCU GPIO with RC snubber.

Use Value: 20 mΩ R_DS(on) limits self-heating to <1.5 W at 7 A, supporting compact heatsinkless design per channel.

Use Scenario: Isolated 24 V DC output stage driving relays and indicator LEDs in modular I/O cards.

IC Role / Device Role / Timing Role: Load switch with overtemperature shutdown via internal thermal sensing feedback to controller.

Use Value: MSL1 rating and -55 to +150 °C operating range ensure reliability in unventilated control cabinets.

USB-C Power Delivery Sink

Battery Protection Circuit

Use Scenario: Reverse-polarity protection and inrush limiting in 20 V PD sink adapters with dual-MOSFET architecture.

IC Role / Device Role / Timing Role: Back-to-back P-channel switch providing bidirectional blocking and controlled turn-on slew rate.

Use Value: 61 nC Q_g allows precise gate timing using discrete RC networks without dedicated drivers.

Use Scenario: Overcurrent and short-circuit cutoff in 2S Li-ion packs with active balancing support.

IC Role / Device Role / Timing Role: Primary discharge FET in protection IC interface; triggered by voltage comparator outputs.

Use Value: 370 mJ single-pulse avalanche energy withstands transient inductive kickback during fault interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 18 mΩ @ -10 V; Q_g = 52 nC; SO-8 but non-exposed drain	Lacks integrated thermal pad; lower R_θJA (62 °C/W) limits sustained current to ~7 A	Preferred where gate drive efficiency is critical and board space allows larger copper area for thermal relief
DMG3415L-7	R_DS(on) = 22 mΩ @ -4.5 V; V_GS(th) = -0.7 to -1.3 V; same SO-8 outline	Optimized for 3.3 V logic drive; higher R_DS(on) increases conduction loss at 10 A	Best for low-voltage MCU interfaces where -10 V gate drive is unavailable

Compared with Si7157DP-T1-GE3 and DMG3415L-7, IRF7416TRPBF-1 delivers superior thermal performance via exposed drain pads and higher avalanche robustness, making it optimal for high-reliability 12–24 V industrial switching where sustained 10 A loads and fault tolerance are required.

Availability

IRF7416TRPBF-1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output modules, USB-C power delivery sinks, and battery protection circuits requiring stable component supply and long-term lifecycle assurance.

Supply support for IRF7416TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's StrongIRFET™ family, engineered for high-efficiency, high-reliability power switching in harsh-environment applications including automotive, industrial automation, and renewable energy systems.

FAQ

Is IRF7416TRPBF-1 suitable for synchronous rectification in buck converters?

Yes. Its 56 ns typical reverse recovery time (t_rr) and low Q_gd/Q_gs ratio enable clean commutation in synchronous buck topologies up to 500 kHz. The integrated body diode supports freewheeling during dead-time, and R_DS(on) = 20 mΩ ensures low conduction loss when actively driven.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but Infineon specifies -10 V as the standard enhancement voltage for full R_DS(on) specification. Driving beyond -15 V provides no significant R_DS(on) improvement and increases gate oxide stress; -10 V is the optimal balance of performance and reliability.

Does IRF7416TRPBF-1 require a gate resistor in high-speed switching applications?

Yes. A series gate resistor (typically 5–22 Ω) is required to dampen ringing caused by parasitic L_g–C_iss resonance and limit peak gate current. Without it, overshoot exceeding ±20 V may occur, risking gate oxide damage during fast transitions.

Can IRF7416TRPBF-1 be used in parallel configurations for higher current handling?

Yes, but only with matched devices and individual gate resistors. Its negative temperature coefficient for R_DS(on) promotes current sharing, but layout symmetry (equal trace inductance/resistance) and thermal coupling are essential to avoid thermal runaway above 15 A total load.

IRF7416TRPBF-1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 20mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 2.04V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRF7416TRPBF-1 FAQ

1.How can I place an order for IRF7416TRPBF-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7416TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7416TRPBF-1 reliable?

The price and inventory of IRF7416TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7416TRPBF-1 is usually 5 days.

3.What payment methods are accepted for IRF7416TRPBF-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7416TRPBF-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7416TRPBF-1?

IRF7416TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7416TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7416TRPBF-1?

For technical support, including IRF7416TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7416TRPBF-1 requirements.

6.How does Aetrix verify that IRF7416TRPBF-1 is sourced from the original manufacturer or authorized distributors?

All IRF7416TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7416TRPBF-1 meets industry standards.

7.What is the process for return or replacement of IRF7416TRPBF-1?

All IRF7416TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7416TRPBF-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7416TRPBF-1 part is unused and in its original packaging.

Return procedure for IRF7416TRPBF-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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