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Infineon Technologies IRF7456TRPBF-1
- Part No.:
- IRF7456TRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7456TRPBF-1.pdf
- Description:
- MOSFET N-CH 20V 16A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,396
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Product details
Overview
IRF7456TRPBF-1 from Infineon Technologies (formerly International Rectifier) is a 20 V, 16 A, N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-efficiency synchronous buck converters and load switches in DC-DC SMPS. It features RDS(on) = 6.5 mΩ @ VGS = 10 V, Qg = 41 nC (typ), and 130 A pulsed drain current - enabling low conduction loss and fast switching in compact 12 V input POL modules.
For engineers reviewing the IRF7456TRPBF-1 datasheet, IRF7456TRPBF-1 pinout, IRF7456TRPBF-1 application, or IRF7456TRPBF-1 equivalent, key selection criteria include its 20 V VDS, 6.5 mΩ on-resistance at 10 V gate drive, SO-8 footprint compatibility, avalanche-rated construction (EAS = 250 mJ), and industrial-grade MSL1 qualification.
Technical Context
This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted channel geometry to achieve low RDS(on) × Qg figure-of-merit (≈267 mΩ·nC). Its gate threshold voltage (VGS(th) = 0.6–2.0 V) supports both 3.3 V and 5 V logic-level drive, while body diode trr = 48–72 ns enables efficient synchronous rectification without external Schottky replacement.
The device operates within -55 °C to +150 °C junction range and exhibits positive temperature coefficient for RDS(on), supporting parallel operation. Thermal resistance RθJA = 50 °C/W (SO-8, no copper pour) and linear derating factor of 0.02 W/°C define safe operating area boundaries under continuous 16 A DC load at TA ≤ 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for 12 V nominal input SMPS stages; limits use to sub-15 V output rails with margin. |
| RDS(on) max @ VGS = 10 V | 6.5 mΩ - Delivers ≤1.66 W conduction loss at 16 A DC, critical for thermal management in sealed enclosures. |
| Qg typ | 41 nC - Enables <50 ns turn-on delay (td(on)) with 6 Ω gate resistor, reducing switching loss in 500 kHz–1 MHz converters. |
| ID @ TA = 25 °C | 16 A - Sustains full rated current with standard SO-8 PCB layout (1 inch² Cu); derates to 13 A at 70 °C ambient. |
| EAS | 250 mJ - Withstands single unclamped inductive energy events (e.g., hot-swap transients) without failure at IAS = 16 A. |
| Ciss | 3640 pF - Defines gate drive power requirement (~182 μW per MHz of switching frequency at 10 V swing). |
| VGS(th) | 0.6–2.0 V - Ensures reliable turn-on with 3.3 V microcontroller GPIOs; avoids partial enhancement in noise-prone environments. |
Pinout & Package
IRF7456TRPBF-1 is housed in JEDEC MS-012AA-compliant SO-8 package (5.00 × 4.00 × 1.27 mm), with exposed drain paddle thermally connected to pins 1–4 and 6–8. Pin 5 is gate; pins 1–4 and 6–8 are paralleled drains; pin 7 is source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 8 | Drain (D) | Parallel-connected high-current output node; electrically and thermally tied to exposed pad for low-inductance, high-power routing. |
| 5 | Gate (G) | Control terminal requiring <41 nC charge for full enhancement; sensitive to ESD (±12 V rating). |
| 7 | Source (S) | Reference node for gate drive; carries full load current and body diode reverse recovery charge (Qrr = 74–110 nC). |
Key Features
| Feature | Design Value |
|---|---|
| Industry-standard SO-8 footprint | Enables drop-in replacement across multiple vendors without PCB redesign or stencil changes. |
| RoHS-compliant, halogen-free construction | Meets IPC-J-STD-020 MSL1 requirements for reflow compatibility and long-term reliability in industrial environments. |
| Low Qgd/Qg ratio (≈44%) | Reduces Miller-induced switching instability during hard commutation, improving gate driver robustness. |
| Body diode trr = 48–72 ns | Minimizes reverse recovery loss in synchronous rectifier mode, eliminating need for external Schottky in 12 V → 3.3 V designs. |
| Positive RDS(on) temperature coefficient | Enables stable current sharing in paralleled configurations without external ballasting resistors. |
Applications
| Server VRM Phase Legs | USB-C PD Load Switches |
|---|---|
|
Use Scenario: High-density 48 V → 12 V intermediate bus converter feeding multiphase CPU VRMs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck stage, switching at 600 kHz with 3.3 V gate drive. Use Value: 6.5 mΩ RDS(on) reduces conduction loss by 32% vs. legacy 10 mΩ devices, lowering thermal stress on 1 oz Cu PCBs. |
Use Scenario: Inrush current limiting and overcurrent protection in 100 W USB-C power delivery sink circuits. IC Role / Device Role / Timing Role: Single-N high-side load switch controlled by MCU GPIO, with integrated body diode handling reverse current during disconnect. Use Value: 130 A pulsed rating withstands 5× inrush surges; 250 mJ avalanche energy prevents failure during hot-plug transients. |
| Industrial PLC I/O Modules | Automotive ADAS Camera Power Rails |
|
Use Scenario: 24 V DC-powered digital output drivers delivering up to 2 A per channel to solenoids and relays. IC Role / Device Role / Timing Role: Low-RDS(on) power switch with integrated protection, driven directly from 3.3 V FPGA I/O banks. Use Value: VGS(th) down to 0.6 V ensures full enhancement at 3.3 V, eliminating level-shifter complexity and board space. |
Use Scenario: 12 V → 3.3 V point-of-load supply for image sensors and SerDes in rear-view camera modules. IC Role / Device Role / Timing Role: High-efficiency buck converter low-side FET operating at 2 MHz with minimal EMI due to controlled Qgd. Use Value: 41 nC Qg enables clean 2 MHz switching with 10 Ω gate resistor, reducing output filter size by 40% vs. higher-Qg alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 5.2 mΩ @ 10 V; Qg = 49 nC; same SO-8 package | Lower conduction loss but higher gate charge increases switching loss above 1 MHz | Prefer for <500 kHz, high-current DC loads where thermal margin is constrained |
| IPB80N04S4-02 | TO-263-3 package; RDS(on) = 2.0 mΩ @ 10 V; Qg = 105 nC | Requires PCB redesign; superior thermal performance but incompatible with SO-8 layouts | Choose only when >20 A continuous current or >100 °C ambient operation is required |
Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF7456TRPBF-1 delivers optimal balance of low RDS(on), moderate Qg, and strict SO-8 compatibility - making it ideal for space-constrained, medium-frequency SMPS where layout reuse and thermal predictability are prioritized over absolute minimum on-resistance.
Availability
IRF7456TRPBF-1 is available at Aetrix Electronics and suitable for server VRM phase legs, USB-C PD load switches, and industrial PLC I/O modules requiring stable component supply and long-term industrial qualification.
Supply support for IRF7456TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and reliability certification infrastructure.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability DC-DC conversion in computing, industrial, and automotive power systems.
FAQ
Is IRF7456TRPBF-1 suitable for 3.3 V gate drive?
Yes. Its gate threshold voltage range (0.6–2.0 V) ensures full enhancement with 3.3 V logic, and typical RDS(on) remains ≤7.5 mΩ at VGS = 4.5 V and ID = 13 A. For guaranteed 3.3 V operation, verify layout parasitics and gate drive strength to deliver ≥41 nC within required dV/dt.
What is the maximum continuous current at 70 °C ambient?
The datasheet specifies ID = 13 A at TA = 70 °C with SO-8 mounting on standard FR-4 (1 inch² copper). This assumes no forced airflow and accounts for thermal derating: PD drops from 2.5 W at 25 °C to 1.6 W at 70 °C, limiting current to maintain junction temperature ≤150 °C.
Does IRF7456TRPBF-1 have integrated ESD protection?
No. It has ±12 V gate-to-source voltage rating but lacks on-chip ESD structures. External TVS diodes or series gate resistors (≥10 Ω) are recommended in handling and assembly to prevent damage from human-body-model (HBM) discharges exceeding 2 kV.
Can it replace IRF7456PbF-1 in existing designs?
Yes. IRF7456TRPBF-1 is the tape-and-reel variant of IRF7456PbF-1, sharing identical electrical specs, SO-8 package dimensions, pinout, and thermal characteristics. Only packaging differs: 4000 units/reel vs. tube/bulk (95 units), with identical RoHS and MSL1 compliance.
IRF7456TRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.8V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3640 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
IRF7456TRPBF-1 FAQ
1.How can I place an order for IRF7456TRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7456TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7456TRPBF-1 reliable?
The price and inventory of IRF7456TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7456TRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRF7456TRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7456TRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7456TRPBF-1?
IRF7456TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7456TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7456TRPBF-1?
For technical support, including IRF7456TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7456TRPBF-1 requirements.
6.How does Aetrix verify that IRF7456TRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRF7456TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7456TRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRF7456TRPBF-1?
All IRF7456TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7456TRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7456TRPBF-1 part is unused and in its original packaging.
Return procedure for IRF7456TRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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