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UMW IRF7470TR
- Part No.:
- IRF7470TR
- Manufacturer:
- UMW
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
IRF7470TR.pdf
- Description:
- MOSFET N-CH 40V 10A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
IRF7470TR from Infineon Technologies is a 40V, 10A N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency DC-DC converters. It delivers 13 mΩ RDS(on) at VGS = 10 V, 15 mΩ at 4.5 V, and features ultra-low gate charge (Qg = 29–44 nC) and fast switching (tr = 1.9 ns, tf = 3.2 ns), enabling high-efficiency power conversion in compact industrial and embedded SMPS designs.
For engineers reviewing the IRF7470TR datasheet, IRF7470TR pinout, IRF7470TR application, or IRF7470TR equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, fully characterized avalanche capability (EAS = 300 mJ), body diode reverse recovery performance (Qrr = 130–230 nC), and SO-8 thermal resistance (RθJA = 50 °C/W).
Technical Context
This MOSFET operates as a low-side synchronous rectifier switch with gate threshold voltage (VGS(th)) of 0.8–2.0 V and forward transconductance (gfs) of 27 S at VDS = 20 V, ID = 8 A. Its SO-8 package supports dual-source/drain paralleling via shared drain terminals (pins 1–4 and 6–7), reducing conduction loss in high-current paths.
The device is characterized for operation up to TJ = 150 °C, with RDS(on) normalized to 2.5× increase at 150 °C versus 25 °C. Avalanche robustness is validated under unclamped inductive switching (IAS = 8.0 A, EAS = 300 mJ), supporting reliable operation in hard-switched topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V input DC-DC stages with 2× safety margin. |
| RDS(on) @ 10 V | 13 mΩ - Enables ≤1.3 W conduction loss at 10 A continuous current in thermally constrained layouts. |
| RDS(on) @ 4.5 V | 15 mΩ - Supports direct logic-level drive from 3.3 V/5 V controllers without gate boosters. |
| Qg | 29–44 nC - Reduces gate driver power consumption and enables >1 MHz switching in LLC resonant converters. |
| tr/tf | 1.9 ns / 3.2 ns - Minimizes switching transition losses and EMI generation in high-dV/dt environments. |
| EAS | 300 mJ - Withstands single-pulse inductive energy during startup/fault without failure in non-isolated buck converters. |
| Qrr | 130–230 nC - Low reverse recovery charge reduces shoot-through risk and improves efficiency in synchronous rectification. |
Pinout & Package
IRF7470TR is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–7 for enhanced thermal dissipation and current sharing. The package measures 4.98 × 6.20 × 1.75 mm and is compatible with IPC-7351B footprint guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Parallel-connected high-current output path; electrically tied to pins 6–7 for low-inductance, high-current routing. |
| 5 | Gate (G) | Control terminal requiring <2.0 V threshold; low Ciss (3430 pF) minimizes driver loading at high frequency. |
| 6, 7, 8 | Source (S) | Common return node for body diode conduction and channel current; pins 6–7 share source connection with pin 8. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 15 mΩ enables direct interface with 3.3 V microcontrollers and PWM controllers without level-shifting circuitry. |
| Low Qgd/Qgs ratio | 8.0/7.9 nC - Reduces Miller effect, improving noise immunity and enabling stable operation in high-dV/dt gate loops. |
| Fully characterized body diode | Qrr = 130–230 nC and trr = 72–110 ns support efficient zero-voltage switching (ZVS) in synchronous buck converters. |
| Avalanche-rated design | EAS = 300 mJ at TJ = 25 °C ensures reliability during transient overloads without derating or external clamping. |
| Thermally enhanced SO-8 | RθJL = 20 °C/W - Enables higher power density than standard SO-8 by routing heat through drain leads to PCB copper. |
Applications
| Server VRM Power Stage | Industrial PLC DC-DC Module |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon-class CPUs. IC Role / Device Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with 3.3 V gate drive. Use Value: 15 mΩ RDS(on) at 4.5 V reduces conduction loss by 22% vs. legacy 20 mΩ devices, lowering thermal stress on 6-layer PCBs. |
Use Scenario: Isolated 24 V-to-5 V/3.3 V DC-DC supply powering I/O modules in harsh factory environments. IC Role / Device Role: Secondary-side rectifier in active-clamp forward topology with 100% duty-cycle capability. Use Value: 300 mJ avalanche rating eliminates need for external TVS protection during load dump transients on 24 V rail. |
| Automotive ADAS Camera Power | Medical Imaging Sensor Supply |
Use Scenario: Compact 12 V-to-1.8 V point-of-load regulator inside rear-view camera housing. IC Role / Device Role: High-efficiency synchronous rectifier in 2 MHz buck converter with tight thermal envelope. Use Value: 1.9 ns rise time and low Qg minimize switching loss, allowing >92% efficiency at 3 A load within 85 °C ambient limit. |
Use Scenario: Low-noise 5 V-to-2.5 V supply for CMOS image sensor biasing in portable ultrasound units. IC Role / Device Role: Low-RDS(on) pass element in post-regulator stage with minimal voltage drop and ripple. Use Value: Body diode VSD = 0.65 V at 125 °C ensures stable reverse recovery during rapid load transients without oscillation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 11.5 mΩ @ 10 V; Qg = 32 nC; SO-8 with enhanced thermal pad. | Lower RDS(on) but higher Qgd (10.5 nC) increases Miller-induced switching delay in high-frequency ZVS designs. | Preferred for fixed 10 V gate drive where thermal margin is critical; less suitable for 4.5 V logic-level systems. |
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 4.5 V; Qg = 16 nC; dual-N in SO-8 with independent gates. | Higher conduction loss but lower total gate charge enables faster turn-on in low-duty-cycle pulse applications. | Optimal for space-constrained dual-FET half-bridge layouts where gate drive simplicity outweighs RDS(on) penalty. |
Compared with SiR872DP-T1-GE3 and DMN3025LSD-13, IRF7470TR uniquely balances low 4.5 V RDS(on), moderate Qg, and proven avalanche ruggedness-making it the preferred choice for industrial SMPS where gate drive voltage headroom and fault tolerance are jointly constrained.
Availability
IRF7470TR is available at Aetrix Electronics and suitable for server VRM power stages, industrial PLC DC-DC modules, and automotive ADAS camera power supplies requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IRF7470TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure aligned to AEC-Q101 and industrial reliability standards.
The IRF7470TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space- and thermal-constrained applications such as telecom rectifiers and embedded power supplies.
FAQ
What is the maximum continuous drain current for IRF7470TR at 70°C ambient?
The IRF7470TR supports 8.5 A continuous drain current at TA = 70°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes SO-8 mounting on a standard FR-4 PCB with 1-inch² copper pour; actual current must be derated per the 0.02 W/°C linear factor above 70°C ambient.
Does IRF7470TR have an integrated Schottky diode?
No. IRF7470TR uses a monolithic silicon MOSFET with an intrinsic body diode formed by the p-n junction between source and drain. Its diode characteristics-including VSD = 0.65 V at 125°C and Qrr = 150–230 nC-are fully characterized in the datasheet, but it does not incorporate a discrete or co-packaged Schottky diode.
Can IRF7470TR be used in parallel configurations?
Yes. The SO-8 layout-with four paralleled drain pins (1–4) and three paralleled source pins (6–8)-is explicitly designed for current sharing. Thermal and electrical symmetry across pins ensures balanced current distribution when layout symmetry and matching gate drive impedance are maintained.
What is the gate-to-source leakage current specification at 125°C?
At TJ = 125°C, the gate-to-source reverse leakage current (IGSS) is specified as ≤ –200 nA with VGS = –12 V. This low leakage ensures stable gate bias retention during high-temperature operation and prevents unintended turn-on in high-impedance gate drive networks.
IRF7470TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- UMW
- Series:
- *
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
IRF7470TR FAQ
1.How can I place an order for IRF7470TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7470TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7470TR reliable?
The price and inventory of IRF7470TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7470TR is usually 5 days.
3.What payment methods are accepted for IRF7470TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7470TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7470TR?
IRF7470TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7470TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7470TR?
For technical support, including IRF7470TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7470TR requirements.
6.How does Aetrix verify that IRF7470TR is sourced from the original manufacturer or authorized distributors?
All IRF7470TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7470TR meets industry standards.
7.What is the process for return or replacement of IRF7470TR?
All IRF7470TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7470TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7470TR part is unused and in its original packaging.
Return procedure for IRF7470TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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