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Infineon Technologies IRF7501TR
- Part No.:
- IRF7501TR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7501TR.pdf
- Description:
- MOSFET 2N-CH 20V 2.4A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:3,307
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Product details
Overview
IRF7501TR from International Rectifier is a dual N-channel enhancement-mode MOSFET in Micro8 package, rated for 20V VDS, 0.135Ω RDS(on) at VGS = 4.5V and ID = 1.7A, with fast switching (tr = 24ns, tf = 16ns) and low-profile (<1.1mm) footprint-ideal for space-constrained DC-DC converter high-side/low-side synchronous rectification.
For engineers reviewing the IRF7501TR datasheet, IRF7501TR pinout, IRF7501TR application, or IRF7501TR equivalent, key selection criteria include its dual-channel layout, thermal resistance (RθJA = 100°C/W), body diode recovery (trr = 39–59ns), and Micro8 package compatibility with high-density PCB layouts in portable power management.
Technical Context
This dual N-channel MOSFET integrates two matched HEXFET devices on a single die, enabling synchronous buck converter topologies without external gate timing coordination. Its ultra-low RDS(on) at 4.5V drive supports efficient operation from 3.3V and 5V logic-level controllers.
The device features a fast-recovery body diode (Qrr = 37–56nC, trr = 39–59ns) and low gate charge (Qg = 5.3–8.0nC), minimizing switching losses in high-frequency (>500kHz) power stages while maintaining ruggedness across –55°C to +150°C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage for 3.3V/5V input rail applications |
| RDS(on) @ VGS = 4.5V | 0.135 Ω - Enables <1.7A continuous conduction with <0.4W conduction loss at 25°C ambient |
| ID @ TA = 25°C | 2.4 A - Sustained current capability for compact load switches and point-of-load regulators |
| tr/tf | 24ns / 16ns - Supports >1MHz switching frequencies with minimal overlap loss |
| Qg | 5.3–8.0 nC - Low gate drive energy requirement compatible with low-power PWM controllers |
| RθJA | 100 °C/W - Thermal performance validated on FR-4 board, enabling natural-convection cooling |
| trr | 39–59 ns - Fast body diode recovery reduces shoot-through risk in synchronous rectification |
Pinout & Package
IRF7501TR uses the Micro8 surface-mount package (2.95 × 3.05 mm, height <1.1 mm), offering half the footprint of standard SO-8 while maintaining SOIC-compatible pad layout and tape-and-reel compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side switch node in half-bridge configuration; connects to input rail |
| G1 | Gate of Channel 1 | Controls turn-on/off of first MOSFET; requires 2.7–12V logic-level drive |
| S2 | Source of Channel 2 | Common source node between channels; ties to output in synchronous buck |
| G2 | Gate of Channel 2 | Independent control input for low-side switch; enables phase-shifted drive |
| S1 | Source of Channel 1 | Connects to S2 internally or externally depending on topology; forms floating source for high-side |
| D2 | Drain of Channel 2 | Low-side switch node; connects to ground or output filter inlay |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Eliminates inter-device timing mismatch in synchronous rectifiers, reducing dead-time sensitivity |
| Ultra-low RDS(on) at 4.5V | Enables direct drive from 3.3V microcontrollers or PMICs without level-shifting circuitry |
| Micro8 package footprint | Reduces PCB area by 50% vs. SO-8, critical for PCMCIA, USB PD adapters, and wearable power modules |
| Fast body diode recovery | Minimizes reverse recovery energy loss during hard commutation in buck converters |
Applications
| USB-C Power Delivery Adapter | Portable SSD Power Management |
|---|---|
Use Scenario: 20V input-to-5V/3.3V synchronous buck conversion in compact wall adapters. IC Role / Device Role / Timing Role: Dual-channel MOSFET provides high-side and low-side switching in single-phase buck regulator. Use Value: Micro8 footprint allows full power stage fit within 12 × 12 mm PCB area; RDS(on) <0.14Ω ensures >92% efficiency at 2A load. | Use Scenario: Dual-rail (5V + 3.3V) power sequencing and load switching for NVMe SSD modules. IC Role / Device Role / Timing Role: Independent channel control enables staggered power-up and dynamic rail enable/disable. Use Value: Low gate charge (Qg <8nC) permits fast, low-jitter switching under FPGA or controller GPIO timing constraints. |
| PCMCIA Card Power Switch | Thin-Film OLED Display Backlight Driver |
Use Scenario: Hot-swap power control for legacy PCMCIA peripherals with strict height limits. IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing via RDS(on) monitoring. Use Value: <1.1mm profile clears mechanical envelope; 20V rating accommodates 12V auxiliary rails. | Use Scenario: PWM-controlled current sink for white LED strings in ultra-thin mobile displays. IC Role / Device Role / Timing Role: Low-side switch modulating LED current at >1kHz with minimal EMI. Use Value: Fast tf = 16ns ensures clean PWM edges; low RDS(on) minimizes thermal rise in confined display bezels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.022Ω @ 4.5V (lower), but VDS = 30V (higher); Micro8 package identical | Better suited for 12V input systems requiring lower conduction loss; higher voltage margin increases cost | Select when system input exceeds 20V or efficiency gain justifies premium pricing |
| DMN3025LSD-13 | RDS(on) = 0.032Ω @ 4.5V; SO-8 package (larger footprint); Qg = 10.5nC (higher) | Requires more PCB area and higher gate drive power; better thermal dissipation (RθJA = 62°C/W) | Prefer for thermally constrained designs where board space is available and gate drive strength is sufficient |
Compared with Si7157DP-T1-GE3 and DMN3025LSD-13, IRF7501TR offers optimal balance of size, voltage rating, and gate drive compatibility for 3.3V/5V-input, space-limited applications-especially where Micro8 footprint and sub-1.1mm height are mandatory.
Availability
IRF7501TR is available at Aetrix Electronics and suitable for USB-C power adapters, portable SSD power modules, PCMCIA hot-swap controllers, and thin-film OLED backlight drivers requiring stable component supply and consistent Micro8 package sourcing.
Supply support for IRF7501TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) was a pioneer in power MOSFET design, known for HEXFET technology and high-efficiency power semiconductors.
The IRF7501TR belongs to the Fifth Generation HEXFET family, engineered specifically for high-density, low-voltage DC-DC conversion in portable and space-constrained electronics.
FAQ
What is the maximum continuous drain current for IRF7501TR at 70°C ambient?
The maximum continuous drain current is 1.9 A at TA = 70°C and VGS = 10 V, derated linearly beyond that temperature using 0.01 W/°C factor. This reflects thermal limitation of the Micro8 package on standard FR-4 board, not silicon capability.
Can IRF7501TR be used in a high-side configuration with 3.3V gate drive?
Yes-its gate threshold voltage (VGS(th)) is 0.7 V min, and RDS(on) is specified down to VGS = 2.7 V (0.12–0.20 Ω). At 3.3 V, typical RDS(on) is ~0.10 Ω, enabling reliable high-side switching without level shifters in low-voltage systems.
Does IRF7501TR include internal ESD protection?
No-IRF7501TR does not integrate ESD protection diodes. Per datasheet, gate-to-source leakage is ±100 µA at ±12 V, indicating no built-in clamping. External TVS or RC snubbers are recommended for gate protection in automated handling or noisy environments.
How does the body diode performance compare to discrete Schottky alternatives?
The integrated body diode has VSD = 1.2 V at 1.7 A and trr = 39–59 ns-slower and higher forward drop than Schottky diodes, but eliminates component count and layout complexity. It is optimized for synchronous rectification, not freewheeling-only use.
IRF7501TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A
- Rds On (Max) @ Id, Vgs:
- 135mOhm @ 1.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260pF @ 15V
- Power - Max:
- 1.25W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7501TR FAQ
1.How can I place an order for IRF7501TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7501TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7501TR reliable?
The price and inventory of IRF7501TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7501TR is usually 5 days.
3.What payment methods are accepted for IRF7501TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7501TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7501TR?
IRF7501TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7501TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7501TR?
For technical support, including IRF7501TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7501TR requirements.
6.How does Aetrix verify that IRF7501TR is sourced from the original manufacturer or authorized distributors?
All IRF7501TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7501TR meets industry standards.
7.What is the process for return or replacement of IRF7501TR?
All IRF7501TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7501TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7501TR part is unused and in its original packaging.
Return procedure for IRF7501TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7501TR Tags
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