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Infineon Technologies IRF7501TRPBF
- Part No.:
- IRF7501TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7501TRPBF.pdf
- Description:
- MOSFET 2N-CH 20V 2.4A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:3,463
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Product details
Overview
IRF7501TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in Micro8 package, rated for 20 V VDS, 0.135 Ω RDS(on) at VGS = 4.5 V and ID = 1.7 A, with fast switching (tr = 24 ns, tf = 16 ns) and low-profile (<1.1 mm) footprint - used in compact DC-DC converters, load switches, and battery protection circuits.
For engineers reviewing the IRF7501TRPBF datasheet, IRF7501TRPBF pinout, IRF7501TRPBF application, or IRF7501TRPBF equivalent, key selection criteria include its dual-channel layout, ultra-low on-resistance at 4.5 V gate drive, thermal resistance (RθJA = 100 °C/W), body diode recovery performance (trr = 39–59 ns), and Micro8 package compatibility with high-density PCB layouts.
Technical Context
This dual N-channel MOSFET integrates two independent power switches sharing a common source connection per channel (S1/G1/D1 and S2/G2/D2), optimized for synchronous rectification and bidirectional load switching. Its fifth-generation HEXFET process delivers enhanced conduction efficiency and reduced gate charge (Qg = 5.3–8.0 nC).
The device operates across –55 °C to +150 °C junction temperature, supports ±12 V gate drive, and features a body diode with VSD = 1.2 V at IS = 1.7 A and fast reverse recovery (Qrr = 37–56 nC), enabling reliable operation in hard-switched topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - maximum blocking voltage for low-voltage logic-level switching applications |
| RDS(on) | 0.135 Ω @ VGS = 4.5 V, ID = 1.7 A - enables <150 mW conduction loss at 1.7 A in compact power stages |
| Qg | 5.3–8.0 nC - low total gate charge reduces driver power demand and improves switching efficiency |
| tr/tf | 24 ns / 16 ns - supports >1 MHz switching in point-of-load regulators |
| RθJA | 100 °C/W - defines thermal derating limit of 0.01 W/°C above 25 °C ambient |
| trr | 39–59 ns - ensures minimal voltage overshoot during diode commutation in buck output stages |
Pinout & Package
IRF7501TRPBF uses the Micro8 surface-mount package (2.95 × 3.05 mm, height <1.1 mm), offering half the footprint of standard SO-8 while maintaining SOIC-compatible pad layout and lead pitch (0.65 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain Channel 1 | Main current path for first N-MOSFET; connected internally to die substrate |
| 2 (G1) | Gate Channel 1 | Controls turn-on/off of first MOSFET; requires ≤±12 V drive |
| 3 (S1) | Source Channel 1 | Return path for Channel 1; electrically isolated from Channel 2 source |
| 4 (S2) | Source Channel 2 | Return path for second MOSFET; separate node enables independent source referencing |
| 5 (G2) | Gate Channel 2 | Independent control input for second N-MOSFET |
| 6 (D2) | Drain Channel 2 | Main current path for second N-MOSFET; no internal connection to D1 |
| 7 (D1) | Drain Channel 1 (redundant) | Second drain terminal for Channel 1 - improves current handling and thermal spreading |
| 8 (D2) | Drain Channel 2 (redundant) | Second drain terminal for Channel 2 - enhances parallel routing and solder joint reliability |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two independent MOSFETs in one Micro8 package - eliminates interconnect inductance between channels and saves board area |
| Ultra-low RDS(on) at 4.5 V | 0.135 Ω enables full-rated current drive from 5 V or 3.3 V logic without level-shifting circuitry |
| Fast body diode recovery | trr = 39–59 ns and Qrr = 37–56 nC reduce switching losses in synchronous rectifiers |
| Micro8 low-profile package | Height <1.1 mm allows integration into space-constrained portable electronics and PCMCIA modules |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Dual MOSFET used as back-to-back switch to block reverse current and enable overvoltage/overcurrent shutdown in Li-ion battery packs. IC Role / Device Role / Timing Role: Acts as bidirectional load switch with integrated body diodes providing fault-path conduction during protection events. Use Value: RDS(on) ≤ 0.135 Ω minimizes voltage drop across protection FETs, preserving battery runtime and thermal margin. | Use Scenario: Controls power path between USB-C port and system rail in portable devices requiring hot-plug detection and VBUS regulation. IC Role / Device Role / Timing Role: Functions as a logic-level load switch with fast turn-on/off timing (td(on) = 5.7 ns) for dynamic power routing. Use Value: Low Qg (5.3–8.0 nC) allows direct drive from microcontroller GPIO, eliminating need for dedicated gate drivers. |
| DC-DC Synchronous Rectifier | Portable LED Driver |
Use Scenario: Replaces Schottky diode in buck converter output stage to improve efficiency in 3.3 V/5 V POL supplies. IC Role / Device Role / Timing Role: Operates as low-side synchronous rectifier with body diode conducting during dead-time before gate turn-on. Use Value: Fast trr (39–59 ns) and low VSD (1.2 V) suppress voltage spikes and reduce conduction loss vs. discrete diodes. | Use Scenario: Drives high-brightness LEDs in handheld medical instruments where board thickness and thermal dissipation are critical. IC Role / Device Role / Timing Role: Serves as PWM-controlled current sink with matched dual channels enabling balanced multi-string LED biasing. Use Value: Micro8 footprint (2.95 × 3.05 mm) and <1.1 mm height allow placement beneath thin display bezels or within stacked PCB assemblies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | RDS(on) = 0.125 Ω @ 4.5 V but higher Qg (10.5 nC); same Micro8 package | Higher gate drive power required; less suitable for low-duty-cycle PWM control | Prefer when lowest on-resistance is prioritized over switching speed |
| SI3457DV-T1-GE3 | RDS(on) = 0.155 Ω @ 4.5 V; lower Qrr (28 nC) but slower tr/tf (35/25 ns) | Better diode softness for EMI-sensitive lighting apps; marginal conduction loss increase | Prefer when reverse recovery noise must be minimized over peak efficiency |
Compared with DMN2020LSD-13 and SI3457DV-T1-GE3, IRF7501TRPBF offers the best balance of low RDS(on), moderate Qg, and fast switching - making it optimal for high-frequency, thermally constrained DC-DC and load-switch designs where gate drive simplicity and board area are critical.
Availability
IRF7501TRPBF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and portable DC-DC converters requiring stable component supply and long-term industrial availability.
Supply support for IRF7501TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in silicon and wide-bandgap power devices.
The IRF7501TRPBF belongs to Infineon's HEXFET® Power MOSFET family - engineered for high-efficiency, space-constrained power conversion in consumer, computing, and portable industrial equipment.
FAQ
Is IRF7501TRPBF RoHS-compliant and lead-free?
Yes. IRF7501TRPBF is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU. The "PbF" suffix in the part marking confirms compliance, and the Micro8 package uses matte tin plating over copper leads with no lead content exceeding 0.1% by weight.
Can IRF7501TRPBF operate reliably at 100% rated current continuously?
No. At TA = 25 °C, continuous drain current is limited to 2.4 A only with adequate PCB copper area and airflow. Derating applies: at 70 °C ambient, max continuous current drops to 1.9 A due to thermal resistance (RθJA = 100 °C/W) and power dissipation limits (PD = 0.8 W).
What is the recommended gate resistor value for switching at 2 MHz?
A gate resistor of 2.2 Ω is recommended to dampen ringing while maintaining tr/tf < 30 ns. This value balances switching speed against gate driver stress and EMI, based on Qg = 6.5 nC (typ.) and typical driver output impedance of ~1 Ω.
Does IRF7501TRPBF require external gate pull-down resistors in zero-power states?
Yes. The device has no internal gate termination; a 10 kΩ pull-down resistor from each gate (G1, G2) to its respective source is required to prevent unintended turn-on from floating gate voltage during power-up, standby, or MCU reset conditions.
IRF7501TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A
- Rds On (Max) @ Id, Vgs:
- 135mOhm @ 1.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260pF @ 15V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7501TRPBF FAQ
1.How can I place an order for IRF7501TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7501TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7501TRPBF reliable?
The price and inventory of IRF7501TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7501TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7501TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7501TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7501TRPBF?
IRF7501TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7501TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7501TRPBF?
For technical support, including IRF7501TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7501TRPBF requirements.
6.How does Aetrix verify that IRF7501TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7501TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7501TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7501TRPBF?
All IRF7501TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7501TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7501TRPBF part is unused and in its original packaging.
Return procedure for IRF7501TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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