Infineon Technologies IRF7503TR

Overview

IRF7503TR from International Rectifier is a dual N-channel enhancement-mode HEXFET® Power MOSFET in Micro8 package, rated for 30 V V_DS, 0.135 Ω R_DS(on) at V_GS = 10 V and 1.7 A, with fast switching (t_d(on) = 4.7 ns, t_f = 5.3 ns) and integrated body diode. It serves as a compact, low-profile (≤1.1 mm) synchronous rectifier or load switch in space-constrained DC-DC converters and portable power rails.

For engineers reviewing the IRF7503TR datasheet, IRF7503TR pinout, IRF7503TR application, or IRF7503TR equivalent, key selection criteria include its dual-channel layout, thermal resistance (R_θJA = 100 °C/W), gate charge profile (Q_g = 7.8 nC typ), and Micro8 footprint compatibility with high-density PCB layouts.

Technical Context

This device implements Fifth Generation HEXFET technology to achieve ultra-low on-resistance per unit area while maintaining rugged avalanche capability and controlled dv/dt (5.0 V/ns peak diode recovery). Its dual-die construction enables independent channel control in half-bridge or dual-switch topologies without cross-conduction risk when properly driven.

The Micro8 package integrates two discrete N-channel MOSFETs sharing no internal connection-each channel has dedicated source, drain, and gate terminals. Thermal performance is specified for surface-mount operation on FR-4 board (t ≤ 10 sec), with junction temperature range from –55 °C to +150 °C and gate drive compatible with standard 5 V or 10 V logic.

Key Specifications

Pinout & Package

IRF7503TR uses the Micro8 surface-mount package (JEDEC MO-229 variant), measuring 4.24 mm × 3.20 mm × 1.1 mm max, with 8 leads in SOIC-outline footprint but half the area of standard SO-8. Pin 1 is marked by notch or dot; top-view pin numbering follows standard Micro8 layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7503TR trades lower R_DS(on) for strict Micro8 footprint compliance and moderate gate charge-making it optimal for ultra-compact, 10 V-driven, thermally managed portable power systems where board area is non-negotiable.

Availability

IRF7503TR is available at Aetrix Electronics and suitable for USB Power Delivery modules, portable device load switching, synchronous buck rectification, and low-voltage motor control requiring stable component supply across production lifecycles.

Supply support for IRF7503TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies since 2015) was a pioneer in power MOSFET design, known for HEXFET® technology and high-efficiency power semiconductor solutions.

The IRF7503TR belongs to the Fifth Generation HEXFET® Power MOSFET product line, engineered specifically for high-density, low-voltage DC-DC conversion and portable power management where minimal footprint and fast switching are essential.

FAQ

What is the maximum continuous drain current for each channel of IRF7503TR at 70°C ambient?

Each channel supports 1.9 A continuous drain current at T_A = 70°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes operation on a standard FR-4 PCB with no heatsink and accounts for thermal derating beyond 25°C ambient (10 mW/°C linear reduction).

Can IRF7503TR be used with 3.3 V logic-level gate drive?

No-IRF7503TR is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, but R_DS(on) is only guaranteed at V_GS = 10 V (0.135 Ω) or 4.5 V (0.222 Ω). At 3.3 V, R_DS(on) rises significantly (>0.5 Ω), increasing conduction loss beyond practical use in power switching.

How are the two channels electrically isolated in IRF7503TR?

The two N-channel MOSFETs share no internal connection: D1/S1/G1 form Channel 1; D2/S2/G2 form Channel 2. S1 and S2 are separate pins (pins 2 and 4), and D1/D2 are also independent (pins 1 and 5). This allows fully independent circuit routing-no common-source or common-drain constraint unless externally implemented.

Is the body diode in IRF7503TR suitable for reverse recovery in hard-switched applications?

Yes-the body diode is characterized for reverse recovery with t_rr = 40–60 ns and Q_rr = 48–72 nC at T_J = 25°C, and the device is rated for 5.0 V/ns peak dv/dt during diode recovery. These parameters confirm suitability for synchronous rectification in hard-switched buck converters up to ~1 MHz, provided gate timing avoids shoot-through.