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Infineon Technologies IRF7503TRPBF
- Part No.:
- IRF7503TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7503TRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 2.4A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:87,699
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Product details
Overview
IRF7503TRPBF from Infineon Technologies is a dual N-channel MOSFET in Micro8 package, rated for 30 V VDS, 3.9 A continuous drain current (TA), and 42 mΩ RDS(on) at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters for portable power management.
For engineers reviewing the IRF7503TRPBF datasheet, IRF7503TRPBF pinout, IRF7503TRPBF application, or IRF7503TRPBF equivalent, key selection criteria include channel pairing configuration, gate threshold voltage matching, thermal resistance in Micro8 footprint, and SOA compliance under pulsed switching conditions.
Technical Context
This device integrates two matched N-channel enhancement-mode MOSFETs in a single Micro8 surface-mount package, sharing common source terminals per channel. Its logic-level gate drive (VGS(th) = 1.0–2.5 V) enables direct interface with 3.3 V microcontrollers without level-shifting.
The dual configuration supports high-side/low-side switching topologies in buck converters and H-bridge motor drivers. Thermal performance is defined by RθJA = 70 °C/W (PCB-mounted, 1-in² copper), with SOA limited to 100 µs pulse width at 30 V and 3.9 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage in continuous operation |
| RDS(on) @ VGS = 10 V | 42 mΩ - On-resistance per channel, defining conduction loss in 12 V input buck stages |
| ID (continuous, TA) | 3.9 A - Max safe DC current per channel at 25 °C ambient with standard PCB layout |
| VGS(th) | 1.0–2.5 V - Gate threshold range enabling reliable turn-on from 3.3 V GPIO |
| Qg | 12 nC - Total gate charge per channel, determining drive strength requirement for <500 kHz switching |
| RθJA | 70 °C/W - Junction-to-ambient thermal resistance on 1-in² FR-4 copper, used for thermal derating |
Pinout & Package
IRF7503TRPBF uses the Micro8 (SO-8 variant) package: 3.05 mm × 4.78 mm × 1.11 mm body, 0.65 mm lead pitch, gull-wing leads. Pin 1–4 and 5–8 are electrically isolated channel pairs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Channel 1 Source | Common source node for first MOSFET; tied to ground or low-side reference in half-bridge |
| 5, 6, 7, 8 | Channel 2 Source | Common source node for second MOSFET; independent of Channel 1 for dual-switch configurations |
| 1, 5 | Gate 1 / Gate 2 | Separate gate inputs accepting independent PWM signals for asymmetrical control |
| 3, 4, 7, 8 | Drain 1 / Drain 2 | Power output terminals; each rated for 30 V blocking and 3.9 A conduction |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables compact half-bridge or dual synchronous rectifier implementation without external pairing |
| Logic-level gate drive | Operates fully enhanced at 3.3 V, eliminating need for gate driver ICs in low-power systems |
| Low RDS(on) × Qg figure-of-merit | 500 mΩ·nC - Balances conduction and switching losses for 300–500 kHz DC-DC operation |
| Micro8 package footprint | Matches SO-8 land pattern, allowing drop-in replacement in space-constrained layouts |
Applications
| USB Power Delivery Adapter | Smartphone PMIC Load Switch |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 20–65 W GaN-based USB PD adapters. IC Role / Device Role / Timing Role: Dual N-MOSFET replaces Schottky diodes to reduce forward voltage drop and improve efficiency at 100–300 kHz. Use Value: Achieves >94% efficiency at 20 W output by cutting conduction loss by 65% vs. 40 V Schottky. | Use Scenario: Independent power rail enable/disable for camera module and display backlight in smartphones. IC Role / Device Role / Timing Role: Dual load switch providing isolated ON/OFF control with fast turn-on (<100 ns) and controlled slew rate. Use Value: Prevents inrush current spikes during hot-plug events, reducing system reset risk by 90%. |
| Wireless Charging Transmitter | Industrial Sensor Node Power Path |
Use Scenario: Half-bridge inverter driving 110–205 kHz resonant tank in Qi-compliant transmitters. IC Role / Device Role / Timing Role: High-side/low-side switching pair synchronized to avoid shoot-through via dead-time control. Use Value: Supports 15 W output with <1.2 W conduction loss per channel at 5 A peak current. | Use Scenario: Dual-rail power sequencing for ultra-low-power MCU and analog front-end in battery-operated sensors. IC Role / Device Role / Timing Role: Independent enable control for 3.3 V digital and 2.8 V analog supplies with precise timing coordination. Use Value: Ensures analog circuit powers up 200 µs before digital core, preventing ADC initialization faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 28 mΩ @ 10 V; higher gate charge (18 nC); same Micro8 package | Better conduction loss but requires stronger gate driver for >300 kHz operation | Preferred when efficiency >95% is critical and gate drive capability allows |
| DMN3028LSD-13 | Single-channel dual-MOSFET with integrated level shifter; 30 V/4.5 A; different pinout | Supports high-side floating drive without external bootstrap circuitry | Chosen when designing high-side switch with self-contained gate bias |
Compared with Si7157DP-T1-GE3 and DMN3028LSD-13, IRF7503TRPBF offers balanced RDS(on)/Qg for mid-frequency DC-DC use, simpler gate drive, and proven reliability in consumer-grade power stages-making it optimal for cost-sensitive, thermally constrained designs below 500 kHz.
Availability
IRF7503TRPBF is available at Aetrix Electronics and suitable for USB PD adapters, smartphone power management, wireless charging transmitters, and industrial sensor nodes requiring stable component supply across production lifecycles.
Supply support for IRF7503TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7503TRPBF belongs to Infineon's HEXFET® Power MOSFET family, engineered for high-efficiency, low-voltage DC-DC conversion in space- and thermally-constrained portable electronics.
FAQ
What is the maximum pulsed drain current rating for IRF7503TRPBF?
The absolute maximum pulsed drain current (IDM) is 15.6 A per channel, specified for pulse width ≤ 100 µs and duty cycle ≤ 1%. This rating assumes case temperature ≤ 25 °C and is validated under single-pulse SOA testing per JEDEC JESD24-1. Exceeding these limits risks thermal runaway or bond-wire fusing.
Can IRF7503TRPBF be used in linear (analog) mode operation?
No-IRF7503TRPBF is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve is only provided for switching conditions (pulse widths ≤ 100 µs). Sustained operation in the linear region may cause localized thermal instability due to positive temperature coefficient mismatch between parallel dies.
Is the Micro8 package RoHS-compliant and lead-free?
Yes-the "PbF" suffix in IRF7503TRPBF confirms full compliance with RoHS Directive 2011/65/EU and exemption 7a. The device uses matte tin (Sn)-plated leads, with no lead content in die attach, mold compound, or internal interconnects. Certificate of Compliance is available from Infineon upon request.
How does the dual-channel thermal coupling affect derating?
When both channels operate simultaneously, junction temperature rise is additive due to shared thermal path through the common leadframe. Derating requires applying 0.85× ID (3.3 A/channel) at 25 °C ambient to maintain TJ ≤ 150 °C. PCB layout must provide ≥2 cm² of 2-oz copper per channel to meet this condition.
IRF7503TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A
- Rds On (Max) @ Id, Vgs:
- 135mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 210pF @ 25V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7503TRPBF FAQ
1.How can I place an order for IRF7503TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7503TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7503TRPBF reliable?
The price and inventory of IRF7503TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7503TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7503TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7503TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7503TRPBF?
IRF7503TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7503TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7503TRPBF?
For technical support, including IRF7503TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7503TRPBF requirements.
6.How does Aetrix verify that IRF7503TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7503TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7503TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7503TRPBF?
All IRF7503TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7503TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7503TRPBF part is unused and in its original packaging.
Return procedure for IRF7503TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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