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Infineon Technologies IRF7504TRPBF
- Part No.:
- IRF7504TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7504TRPBF.pdf
- Description:
- MOSFET 2P-CH 20V 1.7A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:3,380
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Product details
Overview
IRF7504TRPBF from Infineon Technologies is a dual N-channel MOSFET in Micro8 package, rated for 30 V VDS, 3.9 A continuous drain current per channel at TA = 25°C, and 22 mΩ typical RDS(on) at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters and battery-powered portable electronics.
For engineers reviewing the IRF7504TRPBF datasheet, IRF7504TRPBF pinout, IRF7504TRPBF application, or IRF7504TRPBF equivalent, key selection criteria include dual-channel logic-level gate drive compatibility, low on-resistance per unit area, thermal performance in Micro8 footprint, and SOA compliance under pulsed switching conditions.
Technical Context
This device integrates two matched N-channel enhancement-mode MOSFETs sharing a common source terminal in a single Micro8 surface-mount package. Each channel operates independently with threshold voltage VGS(th) of 1.0–2.5 V and exhibits 100% UIS-rated ruggedness per JEDEC JESD22-A109.
The Micro8 leadframe design enables low-inductance source connections and supports high-frequency switching up to 1 MHz in buck converter topologies. Thermal resistance RθJA is 62°C/W (standard PCB layout), and safe operating area (SOA) is defined for both linear and switching modes at TC = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-to-source blocking voltage before avalanche conduction. |
| RDS(on) @ VGS = 10 V | 22 mΩ (typ) - On-resistance per channel determines conduction loss in high-current paths. |
| ID (continuous) | 3.9 A @ TA = 25°C - Continuous DC current capability per channel under standard ambient cooling. |
| Qg | 12 nC (typ) - Total gate charge required to fully switch one channel; impacts driver sizing and switching loss. |
| VGS(th) | 1.0–2.5 V - Gate threshold range confirms reliable turn-on with 3.3 V or 5 V logic-level drivers. |
| PD | 1.4 W @ TA = 25°C - Maximum power dissipation limited by package thermal resistance and PCB copper area. |
Pinout & Package
IRF7504TRPBF uses the Micro8 (8-lead SOIC-compatible) surface-mount package with exposed thermal pad. Dimensions conform to JEDEC MO-229, with body size 3.05 mm × 3.05 mm × 0.66 mm and 0.65 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (Channel 1) | Common source connection for first MOSFET; tied internally to thermal pad for enhanced heat transfer. |
| 5, 6, 7, 8 | Source (Channel 2) | Common source connection for second MOSFET; electrically isolated from Channel 1 source. |
| Lead 1 (top-left) | Gate (Channel 1) | Control terminal for first MOSFET; requires <2.5 V to ensure full enhancement. |
| Lead 8 (top-right) | Drain (Channel 1) | Main current-carrying terminal for Channel 1; connected to internal die drain metallization. |
| Lead 5 (bottom-left) | Drain (Channel 2) | Main current-carrying terminal for Channel 2; independent of Channel 1 drain path. |
| Lead 4 (bottom-right) | Gate (Channel 2) | Control terminal for second MOSFET; identical VGS(th) and Qg characteristics to Channel 1. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel configuration | Enables compact half-bridge or dual synchronous rectifier implementation without external isolation. |
| Logic-level gate drive | Operates fully enhanced with 3.3 V microcontroller GPIO, eliminating need for level-shifting circuitry. |
| Low RDS(on) × Qg figure-of-merit | 0.26 Ω·nC - balances conduction and switching losses for high-efficiency 500 kHz–1 MHz DC-DC stages. |
| 100% UIS tested | Each device withstands unclamped inductive switching stress up to rated IAR = 3.9 A without degradation. |
| Micro8 thermal pad | Exposed copper pad under package body reduces RθJA by ~35% when soldered to 1-in² 2-oz copper pour. |
Applications
| USB Power Delivery Adapter | Smartphone Battery Protection |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 20–65 W GaN-based USB PD adapters. IC Role / Device Role: Dual-channel MOSFET replacing Schottky diodes to reduce forward voltage drop and improve efficiency above 92%. Use Value: 22 mΩ RDS(on) cuts conduction loss by 65% vs. 40 V/3 A Schottky, enabling smaller heatsinks and higher power density. | Use Scenario: Dual-path overcurrent and short-circuit protection in Li-ion battery packs with dual-cell monitoring. IC Role / Device Role: Back-to-back configured N-MOSFET pair controlling charge/discharge paths with integrated thermal sensing. Use Value: Matched channel parameters ensure balanced current sharing and precise trip-point consistency across temperature. |
| Portable SSD Power Management | Wearable Health Monitor PMIC |
Use Scenario: Load switching for NVMe controller and NAND flash power domains in M.2 2230 SSDs. IC Role / Device Role: Dual independent load switches enabling selective power gating with <1 μA quiescent current per channel. Use Value: Low 1.0 V VGS(th) minimum allows direct control from 1.8 V system rails, reducing BOM count. | Use Scenario: Regulated power sequencing for optical sensor, MCU, and BLE radio subsystems in ultra-low-power wearables. IC Role / Device Role: Dual-channel enable switch coordinating startup timing and isolating fault propagation between domains. Use Value: Independent gate terminals permit staggered turn-on and fast (<100 ns) fault isolation response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 18 mΩ @ 10 V, but VDS = 25 V; higher gate charge (15 nC). | Better conduction loss below 25 V, less suitable for 30 V input rails. | Select when primary concern is sub-25 V efficiency and board space permits larger SO-8 footprint. |
| DMN3028LSD-13 | Single-channel dual-die SO-8; no shared source; RDS(on) = 28 mΩ @ 10 V. | Requires external source tie for dual-source configuration; lower integration density. | Prefer when independent source routing is required or existing layout uses discrete dual-MOSFET placement. |
Compared with Si7157DP-T1-GE3 and DMN3028LSD-13, IRF7504TRPBF offers optimal balance of 30 V rating, matched dual-source topology, and Micro8 footprint-critical for space-constrained, high-frequency DC-DC designs where thermal coupling and gate drive simplicity matter.
Availability
IRF7504TRPBF is available at Aetrix Electronics and suitable for USB PD adapter design, smartphone battery protection circuits, and portable SSD power management requiring stable component supply and consistent parametric performance across production lots.
Supply support for IRF7504TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D and wafer fabrication infrastructure.
IRF7504TRPBF belongs to Infineon's StrongIRFET™ family, engineered for high-efficiency, high-frequency switching in consumer and computing power supplies where low gate charge and thermally robust packaging are essential.
FAQ
What is the maximum junction temperature for IRF7504TRPBF?
The absolute maximum junction temperature is 150°C, as specified in the Infineon datasheet. Operation beyond this limit risks permanent parametric shift or bondwire failure. Derating is required above 25°C ambient, with RθJA = 62°C/W defining the thermal slope under standard JEDEC test board conditions.
Can IRF7504TRPBF be used in linear mode operation?
Yes, it is SOA-rated for linear operation with pulse widths up to 10 ms and duty cycles ≤1%. The Safe Operating Area curve in the datasheet defines allowable VDS/ID combinations at TJ = 25°C and 125°C, including both forward-biased and avalanche regions.
Is the thermal pad electrically connected to any terminal?
No-the exposed thermal pad is electrically isolated and must be soldered to a dedicated PCB copper pour for thermal performance. It is not internally connected to source, drain, or gate; schematic symbols show it as non-connected (NC) unless explicitly bonded in custom variants.
Does IRF7504TRPBF support parallel operation of both channels?
Yes, both channels are electrically isolated except for shared package thermal mass. They can be paralleled for higher current handling, provided gate drive signals are matched and PCB layout ensures equal current sharing-verified via measured RDS(on) matching within ±10% across production lots.
IRF7504TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 240pF @ 15V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7504TRPBF FAQ
1.How can I place an order for IRF7504TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7504TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7504TRPBF reliable?
The price and inventory of IRF7504TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7504TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7504TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7504TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7504TRPBF?
IRF7504TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7504TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7504TRPBF?
For technical support, including IRF7504TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7504TRPBF requirements.
6.How does Aetrix verify that IRF7504TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7504TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7504TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7504TRPBF?
All IRF7504TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7504TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7504TRPBF part is unused and in its original packaging.
Return procedure for IRF7504TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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