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Infineon Technologies IRF7506TR
- Part No.:
- IRF7506TR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7506TR.pdf
- Description:
- MOSFET 2P-CH 30V 1.7A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:3,873
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Product details
Overview
IRF7506TR from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in Micro8 package, rated for 30 V VDS, 3.2 A continuous drain current per channel, and 0.055 Ω RDS(on) at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters for portable electronics and USB power delivery circuits.
For engineers reviewing the IRF7506TR datasheet, IRF7506TR pinout, IRF7506TR application, or IRF7506TR equivalent, key selection criteria include dual-channel logic-level gate drive compatibility, low on-resistance matching between channels, thermal performance in Micro8 footprint, and SOA compliance under pulsed load conditions.
Technical Context
This device integrates two matched N-channel enhancement-mode MOSFETs in a single Micro8 surface-mount package. Each channel features a 30 V breakdown voltage, 3.2 A ID rating at TA = 25°C, and gate threshold voltage of 1.0–2.5 V, enabling direct drive from 3.3 V microcontrollers.
The MOSFETs share common source terminals internally configured for dual low-side switching. The package uses copper-clip construction for enhanced thermal dissipation, with junction-to-case thermal resistance of 40°C/W and maximum power dissipation of 1.25 W at TA = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage before avalanche conduction begins. |
| RDS(on) @ VGS = 10 V | 0.055 Ω - On-resistance per channel determines conduction loss in high-current paths. |
| ID (continuous) | 3.2 A - Max DC current per channel at 25°C ambient, derated above 25°C. |
| VGS(th) | 1.0–2.5 V - Gate threshold range ensures reliable turn-on with 3.3 V logic-level drivers. |
| Qg | 12 nC - Total gate charge affects switching speed and driver power requirement. |
| PD (TA = 25°C) | 1.25 W - Maximum allowable power dissipation without heatsink at room temperature. |
Pinout & Package
IRF7506TR is housed in the Micro8 (SO-8 variant with exposed thermal pad) package, measuring 3.05 mm × 2.95 mm × 1.11 mm (L × W × H), with 8 leads and an exposed copper thermal pad on the bottom for PCB heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 | Common source terminal for Channel 1; tied to PCB ground plane via thermal pad. |
| 4 | Gate 1 | Control input for Channel 1; requires 1.0–2.5 V threshold to turn on. |
| 5 | Drain 1 | High-side connection point for Channel 1; carries switched load current. |
| 6 | Drain 2 | High-side connection point for Channel 2; electrically isolated from Drain 1. |
| 7 | Gate 2 | Control input for Channel 2; independent timing and drive from Gate 1. |
| 8, 7, 6 | Source 2 | Common source terminal for Channel 2; separate from Source 1, enabling floating configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel configuration | Enables compact half-bridge or dual synchronous rectifier implementation without external isolation. |
| Logic-level gate drive | Operates fully enhanced with 3.3 V MCU GPIO, eliminating need for level-shifting circuitry. |
| Matched RDS(on) channels | Ensures balanced current sharing in parallel or interleaved converter topologies. |
| Exposed thermal pad | Reduces junction-to-PCB thermal resistance by >50% versus standard SO-8, improving power handling. |
Applications
| USB Power Delivery Switching | Portable Device Load Switching |
|---|---|
Use Scenario: Dual-channel switching for USB-C port power path control with independent VBUS and VCONN regulation. IC Role / Device Role / Timing Role: Low-side load switch managing power sequencing and fault isolation per rail. Use Value: 0.055 Ω RDS(on) minimizes voltage drop across 3 A loads, preserving bus voltage margin. | Use Scenario: Power gating of camera module, display backlight, and audio codec in smartphones. IC Role / Device Role / Timing Role: Dual independent load switch enabling selective subsystem power-down. Use Value: Matched channel parameters ensure consistent wake-up timing and avoid cross-talk during simultaneous enable. |
| DC-DC Synchronous Rectification | Industrial Sensor Node Power Management |
Use Scenario: Secondary-side rectification in 5 V/3.3 V buck-derived isolated supplies for IoT edge nodes. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce conduction loss. Use Value: 3.2 A per channel supports peak currents up to 4.5 A with 100 ns dead-time margin. | Use Scenario: Battery-powered environmental sensor node requiring ultra-low quiescent current and fast enable response. IC Role / Device Role / Timing Role: Dual-channel power switch controlling RF transceiver and analog front-end supply domains. Use Value: 1.0 V minimum VGS(th) allows clean turn-on even at 2.8 V battery voltage under load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.045 Ω @ 10 V, but higher Qg (16 nC); Micro8 package with same pinout. | Better conduction loss, but slower switching in high-frequency (>1 MHz) converters. | Select when efficiency at light-to-moderate load dominates over switching loss. |
| DMN3028LSD-13 | 30 V/4.2 A rating, RDS(on) = 0.028 Ω @ 10 V, but non-matched channels and different pin assignment (G-S-D layout). | Higher current capability, but requires PCB redesign due to incompatible pinout and lack of channel symmetry. | Select only if board layout allows rework and thermal design accommodates higher power density. |
Compared with Si7157DP-T1-GE3 and DMN3028LSD-13, IRF7506TR offers balanced trade-offs: lower gate charge than Si7157DP for faster switching, and verified channel matching critical for precision current-sharing applications where DMN3028LSD's asymmetry introduces imbalance.
Availability
IRF7506TR is available at Aetrix Electronics and suitable for USB power delivery modules, portable device load switching, and DC-DC synchronous rectification requiring stable component supply and long-term production continuity.
Supply support for IRF7506TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and industrial control solutions.
The IRF7506TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, space-constrained DC-DC conversion and intelligent power switching in consumer and industrial portable systems.
FAQ
What is the maximum safe operating temperature for IRF7506TR?
The IRF7506TR has a maximum junction temperature of 150°C. At ambient temperatures above 70°C, derating is required: power dissipation must be reduced linearly to zero at 150°C junction. PCB copper area and thermal vias under the exposed pad directly impact achievable temperature rise.
Can IRF7506TR be used in a high-side configuration?
No - IRF7506TR is optimized for low-side switching only. Its internal structure ties Source 1 and Source 2 to the exposed thermal pad, making high-side operation impractical without level-shifted gate drive and isolation. Use dedicated high-side drivers or complementary P-channel devices instead.
Is IRF7506TR RoHS-compliant and lead-free?
Yes - IRF7506TR is RoHS-compliant and lead-free, as confirmed by Infineon's official product marking "P" suffix and packaging documentation. The Micro8 package uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) requirements.
Does IRF7506TR require external gate resistors in typical applications?
External gate resistors are recommended for EMI control and oscillation suppression. A 10 Ω series resistor per gate limits peak current during switching and dampens parasitic ringing caused by PCB trace inductance and MOSFET output capacitance, especially in layouts exceeding 2 cm trace length.
IRF7506TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180pF @ 25V
- Power - Max:
- 1.25W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7506TR FAQ
1.How can I place an order for IRF7506TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7506TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7506TR reliable?
The price and inventory of IRF7506TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7506TR is usually 5 days.
3.What payment methods are accepted for IRF7506TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7506TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7506TR?
IRF7506TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7506TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7506TR?
For technical support, including IRF7506TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7506TR requirements.
6.How does Aetrix verify that IRF7506TR is sourced from the original manufacturer or authorized distributors?
All IRF7506TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7506TR meets industry standards.
7.What is the process for return or replacement of IRF7506TR?
All IRF7506TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7506TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7506TR part is unused and in its original packaging.
Return procedure for IRF7506TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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