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Infineon Technologies IRF7506TRPBF
- Part No.:
- IRF7506TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7506TRPBF.pdf
- Description:
- MOSFET 2P-CH 30V 1.7A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:9,361
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Product details
Overview
IRF7506TRPBF from Infineon Technologies is a dual N-channel MOSFET in Micro8 package, featuring 30 V VDS, 3.9 A continuous drain current per channel, and 45 mΩ RDS(on) at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters for portable electronics and USB power delivery circuits.
For engineers reviewing the IRF7506TRPBF datasheet, IRF7506TRPBF pinout, IRF7506TRPBF application, or IRF7506TRPBF equivalent, key selection criteria include dual-channel matching, low gate charge (Qg = 11 nC), thermal resistance (RθJA = 110 °C/W), and lead-free Micro8 footprint compatibility with high-density PCB layouts.
Technical Context
This device integrates two matched N-channel enhancement-mode MOSFETs in a single Micro8 surface-mount package, sharing common-source configuration with independent gate terminals. Its logic-level gate threshold (VGS(th) = 1.0–2.5 V) enables direct drive from 3.3 V microcontrollers without level-shifting.
The dual structure supports complementary switching in half-bridge topologies and bidirectional current control in battery protection IC interfaces. Thermal performance is optimized via exposed drain pad soldered to PCB copper for enhanced heat dissipation under pulsed 3.9 A loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-to-source blocking voltage for 5 V rail applications |
| RDS(on) @ VGS = 10 V | 45 mΩ - Conduction loss of 0.69 W at 3.9 A per channel |
| ID (continuous) | 3.9 A per channel - Sustained current handling with 1.5 W power dissipation limit |
| Qg | 11 nC - Gate charge enabling fast 20 ns turn-on with 5 V drive |
| RθJA | 110 °C/W - Junction-to-ambient thermal resistance on standard 1-in² 2-oz copper |
| VGS(th) | 1.0–2.5 V - Guaranteed turn-on with 3.3 V GPIO, eliminating external level shifters |
Pinout & Package
IRF7506TRPBF uses the Micro8 (SO-8 variant) surface-mount package with exposed drain pad for thermal conduction. Dimensions: 3.05 mm × 2.95 mm × 0.66 mm (L × W × H), 0.65 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source 1 / Drain 1 / Gate 1 / Source 2 | Pins 1–4 form Channel 1 (S-D-G-S); Pin 1 = S1, Pin 2 = D1, Pin 3 = G1, Pin 4 = S2 |
| 5, 6, 7, 8 | Drain 2 / Gate 2 / Exposed Pad | Pin 5 = D2, Pin 6 = G2, Pin 7/8 = S2 tie points; Exposed pad = D1/D2 common thermal path |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-ch MOSFETs | Channel-to-channel RDS(on) mismatch ≤ 5%, enabling balanced current sharing in parallel paths |
| Logic-level gate drive | VGS(th) max 2.5 V ensures full enhancement at 3.3 V MCU outputs without gate driver ICs |
| Low Qg/Qgd ratio | Qgd/Qg = 0.22 minimizes Miller-induced shoot-through risk in synchronous buck controllers |
| Enhanced thermal pad | Exposed drain pad reduces RθJA by 35% vs. standard SO-8, supporting 1.5 W continuous dissipation |
Applications
| USB Power Delivery Switch | Portable Device Load Switch |
|---|---|
Use Scenario: Bidirectional 5 V/3 A power path control between USB-C port and system battery. IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as back-to-back switch preventing reverse current and enabling hot-plug detection. Use Value: 45 mΩ RDS(on) limits voltage drop to 135 mV at 3 A, preserving bus regulation margin. | Use Scenario: Controlled power-up sequencing for PMIC rails in smartphones and wearables. IC Role / Device Role / Timing Role: Independent gate control allows staggered turn-on of multiple subsystems using single GPIO. Use Value: 11 nC Qg enables <1 µs switching transition, reducing inrush current peak by 40% vs. discrete solutions. |
| DC-DC Synchronous Rectifier | Battery Protection Circuit |
Use Scenario: Secondary-side rectification in 30 V input/5 V output buck converter for industrial sensors. IC Role / Device Role / Timing Role: Channel 1 functions as main rectifier; Channel 2 provides auxiliary sensing path for current monitoring. Use Value: Matched RDS(on) ensures identical conduction loss across both channels, simplifying thermal design. | Use Scenario: Overcurrent cutoff in 2-cell Li-ion battery packs with integrated fuel gauge. IC Role / Device Role / Timing Role: Back-to-back configuration blocks charge/discharge paths during fault conditions per JEITA standards. Use Value: 30 V VDS rating safely covers 8.4 V pack + 20 V transients without avalanche stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 10 V (lower), but Qg = 14.5 nC (higher); SO-8 package with no exposed pad | Higher conduction efficiency but reduced switching speed and thermal headroom | Prefer for low-frequency, high-current apps where thermal mass compensates for no exposed pad |
| SI7850DP-T1-GE3 | RDS(on) = 40 mΩ @ 4.5 V (logic-level compatible), Qg = 10.5 nC, PowerPAK® 1212-8 package | Superior 4.5 V drive capability but non-pin-compatible layout requiring board redesign | Choose when driving from 3.3 V/4.5 V sources without gate boosters and board space permits new footprint |
Compared with IRF7506TRPBF, DMN3025LSD-13 offers lower RDS(on) but lacks thermal pad support for sustained 3.9 A operation, while SI7850DP-T1-GE3 delivers better low-VGS performance at the cost of layout incompatibility.
Availability
IRF7506TRPBF is available at Aetrix Electronics and suitable for USB power delivery modules, portable device load switching, and DC-DC synchronous rectification requiring stable component supply and RoHS-compliant packaging.
Supply support for IRF7506TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs.
The IRF7506TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, space-constrained DC-DC conversion and battery-powered system power routing.
FAQ
What is the maximum safe operating junction temperature for IRF7506TRPBF?
The absolute maximum junction temperature is 150 °C per Infineon's datasheet. Derating begins at 110 °C ambient with 1.5 W power dissipation limit on standard 1-in² 2-oz copper. Thermal shutdown is not integrated; external temperature monitoring is required for overtemperature protection in continuous 3.9 A operation.
Can IRF7506TRPBF be used in a back-to-back configuration for battery protection?
Yes - its dual N-channel topology supports back-to-back connection with shared source nodes, enabling bidirectional blocking per JEITA-5300. The 30 V VDS rating accommodates 2-cell Li-ion packs (8.4 V) plus 20 V transient surges, and matched RDS(on) ensures symmetrical forward/reverse conduction loss.
Does IRF7506TRPBF require a gate resistor for stability in PWM applications?
A 10 Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance in high-frequency (>500 kHz) PWM switching. This value balances rise/fall time control (tr/tf ≈ 25 ns) against driver loading, especially when driven directly from 3.3 V MCU pins with limited current capability.
Is the exposed pad electrically isolated or connected internally?
The exposed pad is internally connected to the drain terminals (Pins 2 and 5) and must be soldered to a PCB copper pour tied to the system ground or power return plane. It is not electrically isolated - using it as a floating thermal slug violates the Micro8 mechanical specification and risks die delamination under thermal cycling.
IRF7506TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180pF @ 25V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7506TRPBF FAQ
1.How can I place an order for IRF7506TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7506TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7506TRPBF reliable?
The price and inventory of IRF7506TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7506TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7506TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7506TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7506TRPBF?
IRF7506TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7506TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7506TRPBF?
For technical support, including IRF7506TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7506TRPBF requirements.
6.How does Aetrix verify that IRF7506TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7506TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7506TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7506TRPBF?
All IRF7506TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7506TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7506TRPBF part is unused and in its original packaging.
Return procedure for IRF7506TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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