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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7507PBF

Name: IRF7507PBF
Brand: Infineon Technologies
SKU: IRF7507PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7507PBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: IRF7507PBF.pdf

Description:: MOSFET N/P-CH 20V 2.4A MICRO8

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Product details

Overview

IRF7507PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in TO-247 package, rated for 60 V V_DS, 80 A I_D (T_C = 25°C), and 11.5 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-current synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF7507PBF datasheet, IRF7507PBF pinout, IRF7507PBF application, or IRF7507PBF equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, SOA-limited pulsed current capability, thermal resistance (R_θJC = 0.45°C/W), and suitability for hard-switched 48 V bus systems requiring <12 mΩ conduction loss.

Technical Context

This Generation 3 HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-assisted source contact to achieve low on-resistance while maintaining robust avalanche ruggedness (E_AS = 390 mJ). Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V, enabling compatibility with standard 5 V and 3.3 V logic-level drivers when operated in linear or switching mode.

The device exhibits typical gate charge (Q_g) of 105 nC at V_GS = 10 V and output capacitance (C_oss) of 2200 pF at V_DS = 25 V - parameters critical for minimizing switching losses in 100–500 kHz PWM topologies such as phase-shifted full-bridge and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage before avalanche breakdown; supports 48 V nominal input systems with 20 % margin.
R_DS(on) max	11.5 mΩ @ V_GS = 10 V - Enables ≤0.73 W conduction loss at 80 A DC, critical for thermally constrained power stages.
I_D (T_C = 25°C)	80 A - Continuous drain current rating under heatsink-cooled conditions; derates to 52 A at T_C = 100°C.
Q_g	105 nC - Total gate charge determining driver strength requirement; dictates minimum gate resistor for 100 ns rise time.
E_AS	390 mJ - Single-pulse avalanche energy rating; ensures survivability during inductive turn-off transients in motor control.
R_θJC	0.45°C/W - Junction-to-case thermal resistance; defines minimum heatsink interface performance needed to maintain T_J < 175°C.

Pinout & Package

TO-247AC package (3-pin, straight lead, non-isolated tab). Drain connected to metal tab; Gate and Source accessible via leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current power return path	Electrically and thermally coupled to heatsink; requires insulating washer if mounting to grounded chassis.
Gate	Control electrode	Receives voltage-controlled signal; sensitive to ESD; requires gate resistor (10–47 Ω) to damp ringing.
Source	Reference node for gate drive and current sensing	Must be low-inductance connection to power ground; shared with shunt resistor for current feedback.

Key Features

Feature	Design Value
Low R_DS(on) at 10 V drive	Enables use with standard PWM controllers without level-shifting; eliminates need for dedicated gate drivers in medium-power SMPS.
100% UIS tested	Guarantees avalanche energy handling per JEDEC JESD24-11; removes need for external snubbers in flyback or buck-boost designs.
Enhancement-mode operation	Ensures default-OFF behavior during power-up or controller fault; improves system safety in industrial motor drives.
RoHS-compliant, halogen-free	Meets IPC-1752A material declaration requirements for automotive and medical equipment manufacturing.

Applications

Server VRM

Industrial BLDC Drive

Use Scenario: High-density 48 V–12 V point-of-load converter supplying CPU core voltage.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stage, operating at 300–600 kHz with interleaved timing.

Use Value: 11.5 mΩ R_DS(on) reduces conduction loss by 32 % vs. comparable 15 mΩ MOSFETs, improving full-load efficiency from 92.1 % to 93.4 %.

Use Scenario: Half-bridge inverter driving 3 kW permanent-magnet BLDC motor in CNC spindle.

IC Role / Device Role / Timing Role: High-side switch in 3-phase bridge, commutated at ≤20 kHz with dead-time control.

Use Value: 390 mJ E_AS withstands back-EMF spikes during forced commutation, eliminating need for external clamping diodes.

Telecom PSU

EV Onboard Charger

Use Scenario: Primary-side switch in 1.5 kW LLC resonant AC-DC front-end.

IC Role / Device Role / Timing Role: Main switching device in half-bridge configuration, gated at variable frequency near resonance.

Use Value: 105 nC Q_g enables efficient zero-voltage switching (ZVS) up to 350 kHz, reducing switching loss by 41 % versus 140 nC alternatives.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW isolated DC-DC stage for battery charging.

IC Role / Device Role / Timing Role: Low-side rectifier in center-tapped transformer configuration, driven with precise timing relative to primary switches.

Use Value: TO-247 package provides 0.45°C/W R_θJC, allowing 80 A continuous conduction with ≤65°C case temperature using forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.5 mΩ @ 10 V; higher Q_g (140 nC); same V_DS/I_D ratings	Better conduction loss but slower switching; less suitable for >250 kHz operation	Prefer for low-frequency, high-efficiency rectification where thermal margin dominates switching loss.
IXFH80N60X3	600 V V_DS; 80 A I_D; R_DS(on) = 14 mΩ; Gen 3 Superjunction architecture	Higher voltage rating sacrifices R_DS(on) and increases C_oss; intended for universal-input PFC stages	Select only when 600 V blocking is required; avoid for 48 V systems due to unnecessary cost and loss penalty.

Compared with STP80NF55-08 and IXFH80N60X3, IRF7507PBF offers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness for 48–60 V bus applications - making it preferred for high-frequency, thermally constrained DC-DC and motor drive designs.

Availability

IRF7507PBF is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, telecom PSUs, and EV onboard charger secondary-side rectification requiring stable component supply and long-term production continuity.

Supply support for IRF7507PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with over 40 years of MOSFET innovation.

The HEXFET product line was developed for high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems - emphasizing ruggedness, low conduction loss, and manufacturable scalability.

FAQ

Is IRF7507PBF suitable for gate drive with 3.3 V microcontrollers?

No - its gate threshold voltage range (2.0–4.0 V) and specified R_DS(on) require ≥10 V V_GS for full enhancement. At 3.3 V, R_DS(on) exceeds 120 mΩ, causing excessive conduction loss. A logic-level MOSFET (e.g., IRLB8743) or gate driver IC is required for 3.3 V control.

What is the maximum safe operating area (SOA) limit at 100°C case temperature?

At T_C = 100°C, the DC SOA limit is 52 A at V_DS = 10 V, decreasing to 26 A at V_DS = 30 V. Pulse SOA (10 ms) extends to 120 A at V_DS = 20 V. These limits are defined in the Infineon SOA curve (Figure 8, datasheet Rev. D) and must be respected to prevent thermal runaway.

Can IRF7507PBF replace IRF740 in a 400 V flyback design?

No - IRF7507PBF has only 60 V V_DS rating and will fail catastrophically at 400 V. IRF740 is a 400 V device with different die construction and SOA. Substitution requires matching voltage rating, avalanche rating, and thermal profile - none of which align between these parts.

Does IRF7507PBF have integrated ESD protection on the gate?

No - it lacks on-die ESD protection structures. Gate oxide is susceptible to damage from static discharge above ±20 V. Recommended handling includes grounded wrist straps, conductive foam storage, and series gate resistors (≥10 Ω) with TVS diodes (e.g., PGB1010603) between gate and source during PCB layout.

IRF7507PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 2.4A, 1.7A

Rds On (Max) @ Id, Vgs:: 140mOhm @ 1.7A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 260pF @ 15V

Power - Max:: 1.25W

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro8™

IRF7507PBF FAQ

1.How can I place an order for IRF7507PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7507PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7507PBF reliable?

The price and inventory of IRF7507PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7507PBF is usually 5 days.

3.What payment methods are accepted for IRF7507PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7507PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7507PBF?

IRF7507PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7507PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7507PBF?

For technical support, including IRF7507PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7507PBF requirements.

6.How does Aetrix verify that IRF7507PBF is sourced from the original manufacturer or authorized distributors?

All IRF7507PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7507PBF meets industry standards.

7.What is the process for return or replacement of IRF7507PBF?

All IRF7507PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7507PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7507PBF part is unused and in its original packaging.

Return procedure for IRF7507PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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