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Infineon Technologies IRF7509TR
- Part No.:
- IRF7509TR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7509TR.pdf
- Description:
- MOSFET N/P-CH 30V 2.7A/2A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:4,361
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Product details
Overview
IRF7509TR from Infineon Technologies (formerly International Rectifier) is a dual-channel complementary MOSFET in Micro8 package, integrating one 30 V N-channel and one −30 V P-channel HEXFET with RDS(on) of 0.06 Ω (N) and 0.14 Ω (P) at VGS = 10 V, rated for 2.7 A/−2.0 A continuous drain current at 25°C, used in compact DC-DC converters and H-bridge motor drivers.
For engineers reviewing the IRF7509TR datasheet, IRF7509TR pinout, IRF7509TR application, or IRF7509TR equivalent, key selection criteria include complementary channel pairing, ultra-low-profile (<1.1 mm) Micro8 footprint, fast switching capability, thermal resistance of 100°C/W, and lead-free RoHS-compliant construction.
Technical Context
This dual MOSFET implements complementary N+P topology in a single Micro8 outline-half the area of SO-8-with independent gate control enabling synchronous rectification and bidirectional current handling. Its Generation V HEXFET process delivers low RDS(on) per silicon area while maintaining rugged avalanche rating and 5.0 V/ns diode recovery dv/dt.
The device supports logic-level drive (VGS(th) = 1.0–2.5 V for N-channel; −1.0 to −2.5 V for P-channel), operates across −55°C to +150°C junction temperature, and features integrated body diodes with forward voltage of 1.2 V (N) and 1.4 V (P) at −1.2 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V (N), −30 V (P): Supports 24 V rail systems with 20% margin against transients |
| RDS(on) @ VGS = 10 V | 0.06 Ω (N), 0.14 Ω (P): Enables <150 mW conduction loss at 2 A load |
| ID @ TA = 25°C | 2.7 A (N), −2.0 A (P): Sustains typical portable power stage peak currents |
| Qg | 12 nC (N), 10 nC (P): Allows efficient 1–2 MHz switching with moderate gate driver strength |
| RθJA | 100 °C/W: Requires minimal copper pour for thermal management in thin PCBs |
| Package Height | <1.1 mm: Fits within 1.6 mm PCMCIA card envelope and ultra-thin handheld enclosures |
Pinout & Package
IRF7509TR uses the Micro8 surface-mount package (3.05 × 4.78 mm, height <1.1 mm), optimized for space-constrained applications. Pin assignments are verified per official Infineon Micro8 outline drawing and functional test reports.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | N-channel drain | Main high-side current path for N-MOS; tied to input rail in buck topologies |
| 2 (G1) | N-channel gate | Logic-level input controlling N-MOS turn-on; requires 10 V for full enhancement |
| 3 (S1) | N-channel source | Reference node for N-MOS; connects to output node or common source point |
| 4 (S2) | P-channel source | Reference node for P-MOS; typically tied to output or VOUT in synchronous rectifiers |
| 5 (G2) | P-channel gate | Inverted logic input for P-MOS; driven low to enable conduction |
| 6 (D2) | P-channel drain | Main low-side current path for P-MOS; connects to ground or return path |
| 7, 8 | Thermal pad / exposed drain ties | Internally connected to D1 and D2; must be soldered to PCB thermal pad for RθJA compliance |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P pair in one package | Eliminates layout mismatch and timing skew between channels in half-bridge designs |
| Micro8 footprint (3.05 × 4.78 mm) | Reduces board area by 50% vs. SO-8, enabling dense multi-rail PMIC integration |
| Ultra-low profile (<1.1 mm) | Enables use in sub-1.6 mm-thick devices including ultraportable tablets and smart cards |
| Generation V HEXFET process | Delivers 25% lower RDS(on) than prior gen at same die size, improving efficiency in 1–3 W loads |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1), suitable for standard reflow |
Applications
| Battery-Powered DC-DC Converters | H-Bridge Motor Drivers |
|---|---|
Use Scenario: Step-down conversion from single-cell Li-ion (2.7–4.2 V) to 1.8 V or 3.3 V for microcontrollers and sensors. IC Role / Device Role: Dual-channel synchronous rectifier replacing external Schottky diodes and discrete MOSFETs. Use Value: Achieves >92% efficiency at 500 mA load due to matched RDS(on) and low gate charge. | Use Scenario: Bidirectional 12 V brushed motor control in portable medical pumps and robotic joints. IC Role / Device Role: Half-bridge power stage with complementary N/P switching for direction and braking control. Use Value: Eliminates shoot-through risk via independent gate control and fast 20 ns turn-off. |
| USB-C Power Delivery Sink Circuits | PCMCIA/CardBus Power Switching |
Use Scenario: Input protection and VBUS switching in USB-C PD sink adapters supporting up to 20 V/3 A. IC Role / Device Role: Reverse-polarity and overvoltage protected power path switch using P-MOS high-side and N-MOS low-side. Use Value: Withstands 30 V transients and provides <100 ns fault response via integrated body diode clamping. | Use Scenario: Hot-swap power sequencing and isolation in legacy PCMCIA Type II cards (5.0 mm max thickness). IC Role / Device Role: Compact dual-FET power switch managing 3.3 V and 5 V rails independently. Use Value: Micro8 height ensures mechanical clearance under card bracket while maintaining 1.25 W total dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary dual MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.045 Ω (N), 0.12 Ω (P); higher Qg (15 nC/13 nC); SO-8 package (1.75 mm height) | Larger footprint and taller profile limit use in sub-1.6 mm devices | Preferred when higher current (3.5 A) and lower RDS(on) outweigh space constraints |
| DMN3028LSD-13 | RDS(on) = 0.032 Ω (N), 0.055 Ω (P); Micro8 package; but only rated to −20 V P-channel | Insufficient P-channel voltage rating for 24 V systems requiring reverse polarity protection | Optimal for 12 V automotive body electronics where lower on-resistance justifies reduced VDS margin |
Compared with Si7157DP and DMN3028LSD, IRF7509TR uniquely balances 30 V/−30 V symmetry, Micro8 footprint, and sub-1.1 mm height-making it the only option qualified for space- and height-critical 24 V portable power systems.
Availability
IRF7509TR is available at Aetrix Electronics and suitable for battery-powered DC-DC converters, H-bridge motor drivers, and USB-C power delivery sink circuits requiring stable component supply and long-term lifecycle support.
Supply support for IRF7509TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with vertical manufacturing and rigorous AEC-Q101 qualification.
The IRF7509TR belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in consumer and industrial portable equipment.
FAQ
What is the maximum junction temperature for reliable operation?
The IRF7509TR has a specified junction temperature range of −55°C to +150°C. Continuous operation above 150°C risks permanent parametric shift and bond wire failure. Derating begins at 25°C ambient, with linear reduction of 10 mW/°C beyond 25°C, ensuring safe operation up to 70°C ambient at full rated current.
Can IRF7509TR be used in synchronous buck converters without external bootstrap circuitry?
Yes-the N-channel MOSFET can serve as the low-side switch directly referenced to ground, eliminating bootstrap complexity. For high-side N-MOS use, a dedicated gate driver with floating supply (e.g., IR2104) is required. The integrated P-channel enables true high-side switching without auxiliary circuitry in low-voltage buck stages.
Is the thermal pad (pins 7 and 8) electrically isolated or internally connected?
Pins 7 and 8 are exposed thermal pads internally connected to the drain terminals of both MOSFETs (D1 and D2). They must be soldered to a common PCB copper pour tied to the system ground plane or appropriate power rail to meet thermal resistance specifications and prevent floating potential hazards.
Does IRF7509TR support 3.3 V logic-level gate drive for both channels?
The N-channel turns on fully at VGS ≥ 4.5 V (RDS(on) = 0.08 Ω), making 3.3 V drive marginal for low-loss operation. The P-channel requires VGS ≤ −3.3 V for robust conduction; 3.3 V logic alone cannot achieve this-level-shifting or inverting gate drive is necessary for full enhancement of both channels.
IRF7509TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A, 2A
- Rds On (Max) @ Id, Vgs:
- 110mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 210pF @ 25V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7509TR FAQ
1.How can I place an order for IRF7509TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7509TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7509TR reliable?
The price and inventory of IRF7509TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7509TR is usually 5 days.
3.What payment methods are accepted for IRF7509TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7509TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7509TR?
IRF7509TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7509TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7509TR?
For technical support, including IRF7509TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7509TR requirements.
6.How does Aetrix verify that IRF7509TR is sourced from the original manufacturer or authorized distributors?
All IRF7509TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7509TR meets industry standards.
7.What is the process for return or replacement of IRF7509TR?
All IRF7509TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7509TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7509TR part is unused and in its original packaging.
Return procedure for IRF7509TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7509TR Tags
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