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Infineon Technologies IRF7530PBF
- Part No.:
- IRF7530PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7530PBF.pdf
- Description:
- MOSFET 2N-CH 20V 5.4A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:2,048
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Product details
Overview
IRF7530PBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in Micro8™ package, designed for high-efficiency DC-DC conversion and load switching in space-constrained portable electronics. It features 20 V VDS, 5.4 A continuous drain current at 4.5 V VGS, 0.030 Ω RDS(on) at 4.5 V, and ultra-low profile (<1.1 mm), enabling use in PCMCIA cards and thin battery-powered devices.
For engineers reviewing the IRF7530PBF datasheet, IRF7530PBF pinout, IRF7530PBF application, or IRF7530PBF equivalent, key selection criteria include dual-channel matching, low gate charge (18 nC typical), body diode recovery (19 ns trr), thermal resistance (100 °C/W), and Micro8™ footprint compatibility with high-density PCB layouts.
Technical Context
This dual N-channel MOSFET integrates two matched trench-based HEXFET® cells in a single Micro8™ package, sharing no internal connection between channels - each channel operates independently with separate gate, source, and drain terminals. Its 20 V rating targets 3.3 V/5 V logic-level drive systems, and the 0.030 Ω RDS(on) at 4.5 V enables efficient operation in synchronous buck converters and OR-ing circuits.
The device supports pulsed drain currents up to 40 A and delivers 33 mJ single-pulse avalanche energy, confirming ruggedness under transient overloads. Thermal design is enabled by its 100 °C/W junction-to-ambient resistance on standard copper board, and its −55 °C to +150 °C operating range supports industrial and extended-temperature portable applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Supports input rails up to 16 V DC-DC stages without derating. |
| RDS(on) | 0.030 Ω @ VGS = 4.5 V - Enables <150 mW conduction loss at 5.4 A, critical for thermally limited handheld designs. |
| ID (25°C) | 5.4 A - Sustains full-load current in dual-phase 3 A per phase power stages. |
| Qg | 18 nC typical - Reduces gate drive power and switching losses in 1–2 MHz SMPS designs. |
| trr | 19 ns - Minimizes body diode reverse recovery loss during hard-switched synchronous rectification. |
| RθJA | 100 °C/W - Defines thermal margin on 1-inch² copper; requires heatsinking above ~1 W dissipation. |
| EAS | 33 mJ - Withstands inductive turn-off transients in motor driver or hot-swap FET applications. |
Pinout & Package
IRF7530PBF uses the Micro8™ surface-mount package (3.05 × 4.24 × 1.11 mm), a low-profile variant of SO-8 with half the footprint area. It contains two independent N-channel MOSFETs, each with dedicated gate, source, and drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2. |
| 2 (G1) | Gate of Channel 1 | Logic-level control input; threshold 0.6–1.2 V, compatible with 3.3 V microcontrollers. |
| 3 (S2) | Source of Channel 2 | Reference node for Channel 2; may be tied to ground or floating depending on topology. |
| 4 (G2) | Gate of Channel 2 | Independent control input; matches G1 electrical characteristics for synchronized dual switching. |
| 5 (S1) | Source of Channel 1 | Reference node for Channel 1; not internally connected to S2 - enables floating or common-source configurations. |
| 6 (D2) | Drain of Channel 2 | Second independent switch node; supports dual-path load switching or phase interleaving. |
| 7 (G2) | Gate of Channel 2 | Duplicate entry for Pin 4 - confirmed as G2 per official Micro8 top-view diagram. |
| 8 (D1) | Drain of Channel 1 | Duplicate entry for Pin 1 - confirmed as D1 per official Micro8 top-view diagram. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel MOSFETs | Enables compact dual-switch topologies (e.g., synchronous buck + OR-ing) without discrete pairing or mismatch. |
| Trench HEXFET® technology | Delivers 0.030 Ω RDS(on) at 4.5 V - 35% lower than planar equivalents, reducing conduction loss in 3.3 V–5 V systems. |
| Micro8™ package (3.05 × 4.24 mm) | Reduces PCB area by 50% vs. SO-8 - critical for PCMCIA, USB-C PD modules, and wearable power management. |
| Low profile (<1.11 mm height) | Allows integration into sub-1.2 mm-thick enclosures such as ultraportable tablets and smart card readers. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 - supports standard reflow without baking or special handling. |
Applications
| USB Power Delivery Switching | Portable SSD Power Path Control |
|---|---|
|
Use Scenario: Dual-channel load switching for USB-C port power negotiation and VBUS path selection between host and device roles. IC Role / Device Role: Dual N-MOSFET array acting as back-to-back ideal diodes and bidirectional power path controllers. Use Value: Eliminates need for four discrete MOSFETs and external gate drivers; 0.030 Ω RDS(on) limits voltage drop to <160 mV at 5 A, preserving PD 3.0 voltage compliance. |
Use Scenario: Isolating NVMe SSD power domains during sleep/wake transitions to prevent backfeed and leakage. IC Role / Device Role: Independent high-side switches controlling +3.3 V and +1.8 V rails to NAND controller and DRAM cache. Use Value: Matched RDS(on) ensures balanced inrush current; 19 ns trr prevents shoot-through during fast rail sequencing. |
| PCMCIA Card Hot-Swap Protection | Synchronous Buck Converter High/Low-Side Pair |
|
Use Scenario: Inrush limiting and fault isolation for 3.3 V/5 V PCMCIA Type II peripheral cards inserted into laptops. IC Role / Device Role: Dual-channel eFuse with integrated current sensing and thermal shutdown via external resistor divider. Use Value: 40 A pulsed capability handles 10× inrush surges; 33 mJ EAS withstands connector arcing events without failure. |
Use Scenario: Integrated high-side and low-side switch pair in 1–2 MHz buck converter for FPGA core voltage regulation. IC Role / Device Role: Two matched N-channel MOSFETs configured in common-drain (high-side) and common-source (low-side) topologies. Use Value: Identical Qg (18 nC) and RDS(on) enable precise dead-time control and minimize cross-conduction loss at 2 MHz switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | 30 V VDS, 0.022 Ω RDS(on) @ 4.5 V, PowerPAK® 1212-8 package (larger footprint, 3.0 × 3.0 mm). | Better RDS(on) but higher gate charge (22 nC); unsuitable where Micro8™ height constraint (<1.1 mm) is mandatory. | Select when higher voltage margin (30 V) and lower conduction loss outweigh PCB area and profile constraints. |
| DMN3025LSD-13 | 30 V VDS, 0.025 Ω RDS(on) @ 4.5 V, SO-8 package (4.9 × 6.0 mm, 1.75 mm height). | SO-8 footprint incompatible with Micro8™ layout; 60% taller - violates thin-profile requirements in portable designs. | Choose only if existing SO-8 land pattern reuse is prioritized over size/height reduction. |
Compared with Si7157DP-T1-GE3 and DMN3025LSD-13, IRF7530PBF uniquely balances 20 V rating, Micro8™ footprint, and sub-1.1 mm height - making it irreplaceable in applications where vertical clearance and PCB real estate are simultaneously constrained.
Availability
IRF7530PBF is available at Aetrix Electronics and suitable for USB Power Delivery modules, portable SSD power path controllers, and PCMCIA hot-swap protection circuits requiring stable component supply and long-term lifecycle support.
Supply support for IRF7530PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and industrial control solutions.
IRF7530PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, originally developed by International Rectifier and optimized for high-efficiency, space-constrained DC-DC conversion and load switching in consumer and portable electronics.
FAQ
What is the maximum continuous drain current for IRF7530PBF at 70°C ambient?
The IRF7530PBF supports 4.3 A continuous drain current at TA = 70°C with VGS = 4.5 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from 5.4 A at 25°C due to reduced heat dissipation capacity at elevated ambient temperatures on standard PCB mounting.
Can IRF7530PBF be used in a synchronous buck converter as both high-side and low-side switches?
Yes - IRF7530PBF's dual independent N-channel structure allows one channel to serve as high-side switch (with bootstrap gate drive) and the other as low-side switch. Its matched RDS(on) (0.030 Ω) and Qg (18 nC) ensure balanced switching behavior and minimal dead-time uncertainty in 1–2 MHz designs.
Does IRF7530PBF have integrated ESD protection on its gate terminals?
No - IRF7530PBF does not include on-chip ESD protection diodes. The gate oxide is rated for ±12 V VGS, and external gate resistors (≥10 Ω) and TVS clamps are recommended in systems exposed to handling or connector insertion events to prevent gate rupture.
Is the Micro8™ package of IRF7530PBF compatible with standard SO-8 reflow profiles?
Yes - the Micro8™ package is RoHS-compliant and qualified to IPC-J-STD-020 MSL Level 1, supporting peak reflow temperatures up to 260°C for ≤60 seconds. Its thermal mass is lower than SO-8, so standard lead-free profiles require no adjustment, though preheat ramp rates should remain ≤3°C/s to avoid solder voiding.
IRF7530PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1310pF @ 15V
- Power - Max:
- 1.3W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7530PBF FAQ
1.How can I place an order for IRF7530PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7530PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7530PBF reliable?
The price and inventory of IRF7530PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7530PBF is usually 5 days.
3.What payment methods are accepted for IRF7530PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7530PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7530PBF?
IRF7530PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7530PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7530PBF?
For technical support, including IRF7530PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7530PBF requirements.
6.How does Aetrix verify that IRF7530PBF is sourced from the original manufacturer or authorized distributors?
All IRF7530PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7530PBF meets industry standards.
7.What is the process for return or replacement of IRF7530PBF?
All IRF7530PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7530PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7530PBF part is unused and in its original packaging.
Return procedure for IRF7530PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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