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Infineon Technologies IRF7530TR
- Part No.:
- IRF7530TR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7530TR.pdf
- Description:
- MOSFET 2N-CH 20V 5.4A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:6,036
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Product details
Overview
IRF7530TR from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in Micro8™ package, designed for high-efficiency DC-DC conversion and load switching. It features 20 V VDS, 0.030 Ω RDS(on) at VGS = 4.5 V, 5.4 A continuous drain current at 25°C, and ultra-low profile (<1.1 mm), enabling use in space-constrained portable electronics.
For engineers reviewing the IRF7530TR datasheet, IRF7530TR pinout, IRF7530TR application, or IRF7530TR equivalent, key selection criteria include its dual-channel configuration, trench-based low-RDS(on) performance, thermal resistance of 100 °C/W, and Micro8™ footprint compatibility with high-density PCB layouts.
Technical Context
This dual N-channel MOSFET integrates two independent power switches sharing no internal connection-each channel operates with separate gate, source, and drain terminals. Its trench MOSFET architecture delivers low conduction loss and fast switching, supported by 18 nC typical total gate charge and 150 pF reverse transfer capacitance at VDS = 15 V.
The device supports logic-level drive (VGS(th) = 0.6–1.2 V) and exhibits robust safe operating area up to 100 V and 5 A in single-pulse mode. Body diode parameters include 1.2 V forward voltage at 1.3 A and 19 ns typical reverse recovery time, suitable for synchronous rectification and bidirectional current handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage per channel; defines upper limit for input/output rail voltage in buck converters or battery-switching circuits. |
| RDS(on) | 0.030 Ω @ VGS = 4.5 V - Enables <150 mW conduction loss at 5.4 A, critical for thermally limited handheld devices. |
| ID (25°C) | 5.4 A - Continuous per-channel current rating under standard board-mount conditions; determines usable output power in dual-phase regulators. |
| Qg | 18 nC - Total gate charge dictates driver strength requirement and switching loss in PWM applications above 500 kHz. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on 1-inch² copper; sets maximum power dissipation before exceeding 150°C junction temperature. |
| VGS(th) | 0.6–1.2 V - Gate threshold range ensures reliable turn-on with 1.8–3.3 V logic controllers without level-shifting circuitry. |
| EAS | 33 mJ - Single-pulse avalanche energy rating supports inductive load switching without external snubbers in motor drivers. |
Pinout & Package
IRF7530TR uses the Micro8™ surface-mount package (8-pin, dual-row, 2.95 × 3.05 mm footprint, height <1.1 mm), offering half the area of SO-8 and optimized for thin-profile portable designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-side or low-side power path terminal for first MOSFET; electrically isolated from D2. |
| 2 (G1) | Gate of Channel 1 | Control input for Channel 1; requires <1.2 V to turn on, compatible with 1.8 V/3.3 V microcontrollers. |
| 3 (S1) | Source of Channel 1 | Reference node for Channel 1; tied to ground or floating node depending on topology (e.g., high-side switch). |
| 4 (S2) | Source of Channel 2 | Independent reference node for Channel 2; enables dual low-side or complementary half-bridge configurations. |
| 5 (G2) | Gate of Channel 2 | Separate control input for Channel 2; allows independent timing or synchronized operation with G1. |
| 6 (D2) | Drain of Channel 2 | Second independent power path; supports dual-load switching or phase-splitting in compact DC-DC modules. |
| 7, 8 | Thermal pad / exposed drain ties | Internally connected to D1 and D2 respectively; must be soldered to PCB copper for thermal management and EMI reduction. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel structure | Enables two fully isolated switching paths in one Micro8™ footprint-reducing component count vs. discrete SO-8 pairs. |
| Trench HEXFET® technology | Delivers 0.030 Ω RDS(on) at 4.5 V drive, minimizing I²R losses in battery-powered 3.3 V/5 V systems. |
| Micro8™ package (2.95 × 3.05 mm) | Reduces PCB area by 50% versus SO-8 while maintaining thermal pad access-ideal for PCMCIA, wearables, and ultrathin adapters. |
| Low-profile height (<1.1 mm) | Allows integration into sub-1.2 mm stacked assemblies, such as USB-C PD modules and slim display power supplies. |
| Logic-level gate threshold | VGS(th) max 1.2 V ensures full enhancement with 1.8 V GPIOs, eliminating need for gate drivers in low-power MCU-controlled loads. |
Applications
| Power Bank Load Switching | USB-C PD Dual-Channel Control |
|---|---|
Use Scenario: Managing independent charging paths for multiple battery cells or simultaneous USB-A/USB-C outputs in portable power banks. IC Role / Device Role / Timing Role: Dual low-side switch controlling current flow to each output rail; gates driven by MCU PWM or enable signals. Use Value: 0.030 Ω RDS(on) limits voltage drop to <160 mV at 5.4 A, preserving battery runtime and enabling accurate current sensing via shunt resistors. | Use Scenario: Implementing dual-role port (DRP) control in USB-C PD sink applications requiring separate VBUS and CC line switching. IC Role / Device Role / Timing Role: Independent switching of VBUS path and CC logic-level signal path; one channel handles 5–20 V power, the other handles 3.3 V data-line isolation. Use Value: Isolated drain terminals (D1/D2) prevent cross-talk between power and communication paths, meeting USB-IF ESD and noise immunity requirements. |
| Thin-Profile LED Driver | Compact DC-DC Synchronous Rectifier |
Use Scenario: Dimmable backlight control in <1.2 mm-thick OLED displays where mechanical clearance restricts component height. IC Role / Device Role / Timing Role: Dual-channel PWM dimming switch driving parallel LED strings; each channel modulated independently for color balance. Use Value: Micro8™ height <1.1 mm fits within tight Z-axis constraints, while 100 °C/W RθJA allows thermal relief via small copper pads-no heatsink required. | Use Scenario: Secondary-side synchronous rectification in 5 V/3 A flyback converters for wall adapters and IoT power supplies. IC Role / Device Role / Timing Role: Two parallel N-MOSFETs replacing Schottky diodes; driven by transformer-coupled or controller-synchronized gate signals. Use Value: 33 mJ avalanche rating absorbs leakage inductance spikes during discontinuous conduction mode, improving reliability without snubber networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.028 Ω @ 4.5 V, but rated only to 12 V VDS; Micro8™ footprint identical. | Not suitable for 20 V input rails; limited to 5–12 V systems like USB-PD 3.0 fixed voltages. | Select when VIN ≤ 12 V and lower RDS(on) is prioritized over voltage margin. |
| DMN3026LSD-13 | 30 V VDS, 0.026 Ω RDS(on) @ 4.5 V, but in SO-8 package (larger footprint, taller profile). | Requires 50% more PCB area and 1.75 mm height-unsuitable for sub-1.2 mm assemblies. | Choose when higher voltage headroom is needed and board space permits SO-8 mounting. |
Compared with Si7157DP-T1-GE3 and DMN3026LSD-13, IRF7530TR uniquely balances 20 V rating, 0.030 Ω on-resistance, and Micro8™ form factor-making it the only option for space-constrained 20 V-input portable power designs requiring dual-channel logic-level drive.
Availability
IRF7530TR is available at Aetrix Electronics and suitable for power bank load switching, USB-C PD dual-channel control, and thin-profile LED driver applications requiring stable component supply and long-term industrial availability.
Supply support for IRF7530TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7530TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and battery-powered load switching in consumer and portable electronics.
FAQ
What is the maximum allowable gate-source voltage for IRF7530TR?
The absolute maximum VGS rating is ±12 V. Exceeding this risks permanent gate oxide damage. In practice, gate drive should be limited to 0–8 V for logic-level operation, with transient spikes clamped using Zener diodes if driving from higher-voltage sources. The device's 100 nA gate leakage at ±12 V confirms robust oxide integrity within spec.
Can IRF7530TR be used in a high-side switching configuration?
Yes-each channel supports high-side operation when its source is connected to a positive rail and gate is driven relative to that source. However, external level-shifting or bootstrap circuitry is required since the gate driver must swing above the source potential. The 1.2 V max VGS(th) ensures turn-on with ≥2.5 V overhead, making it feasible in 5 V or 12 V high-side applications.
Does IRF7530TR have integrated ESD protection on its gate terminals?
No-IRF7530TR lacks on-die ESD protection diodes. Gate terminals are highly sensitive to electrostatic discharge; handling requires strict Class 1B ESD controls (≤250 V HBM). PCB layout must include external 12 V Zener clamps from each gate to its respective source, and assembly must follow JEDEC J-STD-020 moisture sensitivity level 1 guidelines.
How does the Micro8™ package affect thermal performance compared to SO-8?
Despite its smaller size, the Micro8™ achieves comparable RθJA (100 °C/W) to SO-8 when mounted on 1-inch² copper due to direct thermal pad connections to both drains. However, its reduced copper area lowers RθJC margin-PCB layout must allocate ≥25 mm² exposed copper per drain pad and use ≥2 thermal vias per pad to maintain junction temperature below 150°C at full 5.4 A load.
IRF7530TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1310pF @ 15V
- Power - Max:
- 1.3W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7530TR FAQ
1.How can I place an order for IRF7530TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7530TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7530TR reliable?
The price and inventory of IRF7530TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7530TR is usually 5 days.
3.What payment methods are accepted for IRF7530TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7530TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7530TR?
IRF7530TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7530TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7530TR?
For technical support, including IRF7530TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7530TR requirements.
6.How does Aetrix verify that IRF7530TR is sourced from the original manufacturer or authorized distributors?
All IRF7530TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7530TR meets industry standards.
7.What is the process for return or replacement of IRF7530TR?
All IRF7530TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7530TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7530TR part is unused and in its original packaging.
Return procedure for IRF7530TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7530TR Tags
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SSM6N7002KFU,LF
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2N7002DW-7-F
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SSM6L56FE,LM
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
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EM6K34T2CR
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DMG6601LVT-7
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