Infineon Technologies IRF7530TRPBF

Overview

IRF7530TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in Micro8™ package, designed for high-efficiency load switching and power management in space-constrained portable electronics. It features 20 V V_DS, 5.4 A continuous drain current at 4.5 V_GS, 0.030 Ω R_DS(on) at V_GS = 4.5 V, and ultra-low profile (<1.1 mm), enabling use in PCMCIA cards and thin mobile devices.

For engineers reviewing the IRF7530TRPBF datasheet, IRF7530TRPBF pinout, IRF7530TRPBF application, or IRF7530TRPBF equivalent, key selection criteria include its dual-channel configuration, low R_DS(on) at logic-level gate drive, thermal resistance of 100 °C/W, avalanche energy rating of 33 mJ, and Micro8™ footprint compatibility with high-density PCB layouts.

Technical Context

This dual N-channel MOSFET uses trench-based HEXFET® technology to achieve symmetric on-resistance and matched channel characteristics across both devices. Its gate threshold voltage (0.6–1.2 V) enables reliable turn-on with 2.5 V and 3.3 V logic systems, while the integrated body diodes support bidirectional current handling in H-bridge and synchronous rectification topologies.

The device operates over –55 °C to +150 °C junction temperature range and supports pulsed drain currents up to 40 A. Its 18 nC total gate charge and 3.4 nC Miller charge enable fast switching with moderate gate drive strength, and the 150 pF reverse transfer capacitance minimizes dynamic shoot-through risk in half-bridge configurations.

Key Specifications

Pinout & Package

IRF7530TRPBF is housed in the Micro8™ package - a lead-free, surface-mount 8-pin SOIC variant with half the footprint of standard SO-8 and height <1.1 mm. The package supports tape-and-reel delivery and is optimized for automated placement in high-density portable PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with Si7157DP-T1-GE3 and DMN3028LSD-13, IRF7530TRPBF uniquely balances ultra-low profile (<1.1 mm), industry-leading R_DS(on)/area ratio, and proven avalanche ruggedness - making it optimal for next-gen wearables where Z-height and thermal density are co-constrained.

Availability

IRF7530TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power switches, portable SSD rail control, and wireless earbud charging cases requiring stable component supply and long-term production continuity.

Supply support for IRF7530TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with emphasis on energy efficiency and system reliability.

IRF7530TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-density portable power systems where low on-resistance, minimal board area, and thermal performance under thin-profile constraints are primary design drivers.

FAQ

Is IRF7530TRPBF suitable for hot-swap applications with 5 V input?

Yes. With V_DS = 20 V and R_DS(on) = 0.030 Ω at 4.5 V_GS, it supports 5 V hot-swap operation up to 5.4 A continuous current. Its 33 mJ avalanche rating and 40 A pulsed drain current allow safe handling of capacitive inrush and transient overloads without external clamping.

What is the maximum PCB copper area needed to sustain 5.4 A at 70°C ambient?

To sustain 5.4 A at 70°C ambient, the device requires ≥1 inch² (645 mm²) of 2 oz copper on the top layer connected to pins 1, 6, and 8 (drains) and pins 3/5/7 (sources), per IR's thermal characterization. Smaller copper areas reduce allowable current to 4.3 A at 70°C, as specified in the datasheet.

Does IRF7530TRPBF support 1.8 V GPIO drive?

No. Its gate threshold voltage range is 0.6–1.2 V, but full enhancement (R_DS(on) ≤ 0.045 Ω) requires ≥2.5 V_GS. At 1.8 V_GS, R_DS(on) rises above 0.1 Ω, increasing conduction loss by >3× - use only with 2.5 V, 3.3 V, or 5 V logic-level drivers.

Can the two channels be paralleled to increase current capacity?

No. The channels are not internally paralleled and have independent terminals. Paralleling requires external matching of gate drive, source inductance, and thermal coupling - which defeats the purpose of the integrated dual design. For higher current, select a single-channel part with equivalent R_DS(on) and thermal rating.