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Infineon Technologies IRF7555TRPBF
- Part No.:
- IRF7555TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7555TRPBF.pdf
- Description:
- MOSFET 2P-CH 20V 4.3A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:5,783
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Product details
Overview
IRF7555TRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode HEXFET® Power MOSFET in Micro8™ package, rated for -20 V VDS, 0.055 Ω RDS(on) at VGS = -4.5 V, and -4.3 A continuous drain current at 25°C. It integrates two matched low-side switches ideal for load switching and battery protection in portable power management circuits.
For engineers reviewing the IRF7555TRPBF datasheet, IRF7555TRPBF pinout, IRF7555TRPBF application, or IRF7555TRPBF equivalent, key selection criteria include its dual P-channel configuration, ultra-low on-resistance in a space-saving Micro8 footprint, thermal performance (RθJA = 100 °C/W), and body diode recovery characteristics (trr = 54 ns typical).
Technical Context
This device implements trench-gate MOSFET technology to achieve high channel density and low conduction loss per unit area. Its dual die layout enables symmetrical current sharing and matched switching behavior between channels, critical for balanced load control in dual-rail systems.
The Micro8™ package features an exposed drain pad for enhanced thermal dissipation and a 1.1 mm maximum profile-optimized for thin-profile applications where board height and footprint are constrained, such as USB-C PD adapters and compact battery management modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for negative rail switching applications |
| RDS(on) | 0.055 Ω @ VGS = -4.5 V - Enables <120 mW conduction loss at 1.5 A per channel |
| ID (25°C) | -4.3 A - Continuous current rating per channel under standard PCB mounting |
| trr | 54 ns typical - Fast body diode recovery supports synchronous rectification in buck converters |
| Qg | 10 nC - Low gate charge reduces drive power and enables efficient PWM control at >1 MHz |
| RθJA | 100 °C/W - Thermal resistance defines junction temperature rise under natural convection on FR-4 |
| VGS(th) | -0.6 to -1.2 V - Logic-level compatible with 1.8–3.3 V microcontroller outputs |
Pinout & Package
IRF7555TRPBF uses the Micro8™ surface-mount package (3.05 × 4.24 mm, 1.1 mm max height) with exposed drain pads on both sides for thermal and electrical connection. The package accommodates dual independent P-channel MOSFETs in a single 8-pin outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain 1 / Drain 2 | Exposed copper pads - electrically and thermally connected to internal drain regions of respective MOSFETs |
| 5, 6 | Source 1 / Source 2 | Low-impedance source terminals for each channel; used for current return and sensing |
| 7, 8 | Gate 1 / Gate 2 | Independent control inputs; require no level-shifting for logic-level drive due to low VGS(th) |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel integration | Two matched, isolated MOSFETs in one Micro8 package reduce board area by >50% vs. discrete SO-8 solutions |
| Trench HEXFET® technology | Delivers 0.055 Ω RDS(on) at -4.5 V drive-enabling efficient operation from 3.3 V rails |
| Ultra-low profile | 1.1 mm max height allows use in PCMCIA cards, slim power banks, and stacked PCB assemblies |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility |
Applications
| USB-C Power Delivery Switching | Battery Protection Circuit |
|---|---|
Use Scenario: Bidirectional power path control in USB-C DRP (dual-role port) implementations requiring reverse-current blocking and fast fault response. IC Role / Device Role / Timing Role: Dual P-channel MOSFET configured as back-to-back switches to prevent battery discharge during sink mode and enable safe VBUS sourcing. Use Value: 0.055 Ω RDS(on) limits voltage drop to <80 mV at 1.5 A, preserving PD negotiation margins while supporting 3 A charging. | Use Scenario: Over-discharge and short-circuit protection in single-cell Li-ion battery packs for wearables and medical sensors. IC Role / Device Role / Timing Role: Low-side switch controlling battery discharge path; paired with protection IC to interrupt current within 10 µs of fault detection. Use Value: Matched channel parameters ensure identical trip thresholds and eliminate imbalance-induced false triggering in dual-path monitoring. |
| Compact DC-DC Load Switch | Portable Display Backlight Control |
Use Scenario: High-efficiency 3.3 V/5 V load switching in IoT edge nodes where standby current and PCB area are critical. IC Role / Device Role / Timing Role: P-channel load switch enabling controlled power-up sequencing and zero-quiescent-current shutdown. Use Value: Gate threshold range (-0.6 to -1.2 V) ensures full enhancement with 1.8 V GPIO, reducing system-level level-shifter count. | Use Scenario: Independent dimming control of dual LED strings in foldable OLED displays with tight mechanical clearance. IC Role / Device Role / Timing Role: Dual-channel constant-current sink driver using external resistors and PWM gating via separate gates. Use Value: 54 ns body diode trr minimizes cross-conduction losses during high-frequency PWM dimming (≥20 kHz). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7957DP-T1-GE3 | RDS(on) = 0.042 Ω @ -4.5 V; higher Qg (14 nC); SO-8 package (larger footprint) | Higher current capability (-6.5 A) but requires more board area and has slower switching | Prefer when higher continuous current is needed and board space permits |
| DMC3025LSD-13 | RDS(on) = 0.035 Ω @ -4.5 V; dual N-channel; requires gate driver for high-side use | Requires external level-shifting circuitry; not direct replacement without redesign | Choose only if N-channel topology and driver integration are already in design |
Compared with Si7957DP-T1-GE3 and DMC3025LSD-13, IRF7555TRPBF offers the best balance of low RDS(on), minimal footprint, and logic-level compatibility-making it optimal for space-constrained, low-voltage portable systems where simplicity and thermal efficiency are prioritized over peak current headroom.
Availability
IRF7555TRPBF is available at Aetrix Electronics and suitable for USB-C power delivery modules, battery protection circuits, compact DC-DC load switches, and portable display backlight control requiring stable component supply and consistent lead-free manufacturing.
Supply support for IRF7555TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap technologies.
The IRF7555TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in space- and thermally-constrained portable electronics.
FAQ
What is the maximum operating junction temperature for IRF7555TRPBF?
The absolute maximum junction temperature is +150°C, with continuous operation recommended up to +125°C under derated power conditions. Thermal design must account for RθJA = 100°C/W on standard FR-4 and the dual-drain thermal path enabled by the Micro8™ exposed pads.
Can IRF7555TRPBF be used in parallel configurations?
Yes-its matched dual P-channel structure and positive temperature coefficient of RDS(on) support inherent current sharing. For parallel operation, ensure symmetrical PCB layout, equal gate drive impedance, and shared thermal mass to maintain <5°C inter-channel temperature difference.
Does IRF7555TRPBF include integrated ESD protection?
No-IRF7555TRPBF does not integrate on-die ESD protection diodes. External TVS devices or series resistors are recommended on gate lines in environments with >2 kV HBM risk, especially when interfacing with hot-pluggable connectors like USB-C.
What is the avalanche energy rating and how is it applied in circuit design?
IRF7555TRPBF is rated for 36 mJ single-pulse avalanche energy (EAS). This rating applies during unclamped inductive switching events-such as relay coil de-energization-and must be verified against actual L·I² values in the target application to avoid cumulative junction damage.
IRF7555TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1066pF @ 10V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7555TRPBF FAQ
1.How can I place an order for IRF7555TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7555TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7555TRPBF reliable?
The price and inventory of IRF7555TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7555TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7555TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7555TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7555TRPBF?
IRF7555TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7555TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7555TRPBF?
For technical support, including IRF7555TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7555TRPBF requirements.
6.How does Aetrix verify that IRF7555TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7555TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7555TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7555TRPBF?
All IRF7555TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7555TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7555TRPBF part is unused and in its original packaging.
Return procedure for IRF7555TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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