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Infineon Technologies IRF7750TRPBF
- Part No.:
- IRF7750TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
IRF7750TRPBF.pdf
- Description:
- MOSFET 2P-CH 20V 4.7A 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:7,558
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Product details
Overview
IRF7750TRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in TSSOP-8 package, designed for high-efficiency load switching and battery protection circuits. It features -20 V VDS, 0.030 Ω RDS(on) at VGS = -4.5 V, ±4.7 A continuous drain current, and ultra-low profile (<1.1 mm), enabling use in space-constrained portable power management systems.
For engineers reviewing the IRF7750TRPBF datasheet, IRF7750TRPBF pinout, IRF7750TRPBF application, or IRF7750TRPBF equivalent, key selection criteria include dual P-channel configuration for high-side load switching, low RDS(on) at logic-level gate drive, thermal performance on small PCB footprints, and compatibility with lead-free reflow processes.
Technical Context
This device implements two independent P-channel MOSFETs in a single TSSOP-8 package with shared source terminals configured for complementary high-side switching. Its -20 V breakdown voltage and -1.2 V gate threshold support robust operation in 3.3 V and 5 V control environments.
The 0.030 Ω on-resistance at -4.5 V gate drive enables <100 mW conduction loss at 3.3 A, while the 125 °C/W junction-to-ambient thermal resistance requires careful layout on 1-inch² copper for sustained 1 W dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - supports input rails up to 16 V with 20 % margin against avalanche |
| RDS(on) | 0.030 Ω @ VGS = -4.5 V - delivers ≤100 mW I²R loss at 1.8 A load current |
| ID (25°C) | ±4.7 A - enables dual-channel 3.3 A load switching with derating above 70°C |
| Qg | 26–39 nC - determines gate drive energy requirement for <200 ns turn-on/turn-off |
| RθJA | 125 °C/W - requires ≥1 in² copper pour for 1 W continuous operation at 25°C ambient |
| VGS(th) | -0.45 to -1.2 V - ensures full enhancement with 3.3 V logic-level gate signals |
| tr/tf | 54 ns / 210 ns - defines minimum PWM frequency limit (~1 MHz) before switching loss dominates |
Pinout & Package
TSSOP-8 package: 3.0 × 4.4 mm footprint, 1.05 mm max height, exposed drain pad for thermal enhancement, RoHS-compliant lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (Channel 1) | Common source terminal for first P-MOSFET; tied internally to pin 5, 6, 7 |
| 4 | Gate (Channel 1) | Controls conduction of first P-MOSFET; logic-level compatible |
| 5, 6, 7 | Source (Channel 2) | Common source terminal for second P-MOSFET; electrically tied to pins 1–3 |
| 8 | Gate (Channel 2) | Independent control input for second P-MOSFET; no internal cross-coupling |
| Exposed Pad | Drain (Both Channels) | Thermally and electrically connects both drains; must be soldered to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Enables independent high-side load switching without external level shifters |
| 0.030 Ω RDS(on) @ -4.5 V | Reduces conduction loss by >40 % vs. comparable SO-8 P-MOSFETs at same current |
| TSSOP-8 footprint | 45 % smaller area than SO-8, critical for PCMCIA, USB-C PD, and thin mobile PCBs |
| Lead-free & RoHS compliant | Qualified for Pb-free reflow (260°C peak), eliminating post-assembly tin whisker risk |
| Body diode recovery trr | 26–39 ns - supports synchronous rectification in buck converters up to 500 kHz |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Dual-MOSFET reverse-polarity and overcurrent protection in 2-cell Li-ion packs. IC Role / Device Role / Timing Role: High-side P-MOSFET pair controlling charge/discharge path with integrated body diodes for fault current blocking. Use Value: 0.030 Ω RDS(on) limits voltage drop to <100 mV at 3.3 A, preserving battery runtime and thermal headroom. | Use Scenario: Bidirectional 5–20 V power path switching in USB-C PD sink applications. IC Role / Device Role / Timing Role: Dual high-side switches isolating VBUS from system rails during port negotiation and fault events. Use Value: Independent gate control allows precise sequencing of power-up/down, preventing backfeed during hot-plug transitions. |
| Portable SSD Power Rail Control | Industrial Sensor Node Load Switch |
Use Scenario: Selective 3.3 V/5 V rail enable for NVMe SSD modules in ultrabooks and tablets. IC Role / Device Role / Timing Role: Dual-channel load switch managing separate power domains for controller and NAND flash. Use Value: TSSOP-8's 1.05 mm height fits under stacked BGA packages, enabling vertical PCB stacking in <12 mm chassis. | Use Scenario: Low-duty-cycle sensor activation in battery-powered IIoT nodes with 10-year lifetime targets. IC Role / Device Role / Timing Role: High-side switch disconnecting analog front-end and RF transceiver during sleep mode. Use Value: -100 nA gate leakage at VGS = -12 V ensures <1 µA total quiescent current per channel, extending battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.028 Ω @ -4.5 V; higher Qg (44 nC); SO-8 package | Larger footprint; better conduction loss but slower switching | Prefer when board space permits and lower I²R loss outweighs layout constraints |
| DMC3025LSD-13 | RDS(on) = 0.032 Ω @ -4.5 V; TSSOP-8; higher VGS(th) (-0.7 to -1.5 V) | Narrower gate threshold range increases risk of partial turn-on with weak drivers | Prefer when tighter VGS(th) distribution is required for robust 3.3 V logic interface |
Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF7750TRPBF offers optimal balance of low RDS(on), compact TSSOP-8 size, and wide VGS(th) margin-making it ideal for space-limited, battery-sensitive designs where gate drive strength is well-controlled.
Availability
IRF7750TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, portable SSD power rail control, and industrial sensor node load switching requiring stable component supply across production lifecycles.
Supply support for IRF7750TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.
The HEXFET® Power MOSFET product line delivers optimized P- and N-channel devices for high-efficiency DC-DC conversion, motor control, and battery management-designed specifically for thermally constrained, high-reliability portable and industrial systems.
FAQ
What is the maximum continuous drain current for IRF7750TRPBF at 70°C ambient?
The maximum continuous drain current is ±3.8 A at TA = 70°C with VGS = -4.5 V, based on thermal derating from the 1.0 W power dissipation limit at 25°C and 0.008 W/°C linear derating factor. This assumes mounting on a 1-inch² copper board with t < 10 seconds pulse duration.
Can IRF7750TRPBF be driven directly from a 3.3 V microcontroller GPIO?
Yes-its gate threshold voltage range of -0.45 V to -1.2 V ensures full enhancement at 3.3 V logic levels, and its 26–39 nC total gate charge is compatible with standard MCU GPIOs driving through ≤10 Ω series resistance. No level shifter is required for typical 3.3 V control interfaces.
Is the exposed pad on the TSSOP-8 package electrically connected?
Yes-the exposed pad is internally connected to both drain terminals and must be soldered to a PCB copper pour tied to the system ground or power return plane. It serves as the primary thermal and electrical path for both MOSFET channels, and omitting this connection violates absolute maximum ratings.
What is the reverse recovery time of the body diode in IRF7750TRPBF?
The body diode reverse recovery time (trr) is 26–39 ns at TJ = 25°C, IF = -1.0 A, and di/dt = 100 A/µs. This value supports use in synchronous rectification and flyback topologies operating below 500 kHz, where fast recovery minimizes switching losses and EMI generation.
IRF7750TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700pF @ 15V
- Power - Max:
- 1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
IRF7750TRPBF FAQ
1.How can I place an order for IRF7750TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7750TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7750TRPBF reliable?
The price and inventory of IRF7750TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7750TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7750TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7750TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7750TRPBF?
IRF7750TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7750TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7750TRPBF?
For technical support, including IRF7750TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7750TRPBF requirements.
6.How does Aetrix verify that IRF7750TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7750TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7750TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7750TRPBF?
All IRF7750TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7750TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7750TRPBF part is unused and in its original packaging.
Return procedure for IRF7750TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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