Infineon Technologies IRF7751TRPBF

Overview

IRF7751TRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in TSSOP-8 package, designed for high-efficiency load switching and battery protection circuits. It delivers 35 mΩ R_DS(on) at V_GS = −10 V, −4.5 A continuous drain current at 25°C, and operates across −55°C to +150°C junction temperature - enabling compact power management in portable USB-C PD adapters and dual-battery switchover systems.

For engineers reviewing the IRF7751TRPBF datasheet, IRF7751TRPBF pinout, IRF7751TRPBF application, or IRF7751TRPBF equivalent, key selection criteria include verified dual P-channel configuration, low-profile (<1.2 mm) TSSOP-8 footprint, body diode reverse recovery time (23–35 ns), and gate charge parameters (Q_g = 29–44 nC) critical for synchronous buck converter high-side control and OR-ing applications.

Technical Context

This device implements two independent P-channel MOSFETs sharing a common source connection in a single TSSOP-8 package, supporting bidirectional load switching and redundant power path control. Its −30 V V_DSS, 35 mΩ R_DS(on) @ −10 V, and 55 mΩ @ −4.5 V enable efficient operation in low-voltage DC/DC output stages and hot-swap controllers.

The integrated body diode exhibits V_SD = −1.2 V @ −1.0 A and fast trr = 23–35 ns, making it suitable for freewheeling paths where reverse recovery loss must be minimized. Gate threshold voltage (−1.0 to −2.5 V) ensures reliable turn-on with standard logic-level drive in 3.3 V or 5 V control systems.

Key Specifications

Pinout & Package

TSSOP-8 package: 3.0 × 3.0 mm footprint, <1.2 mm profile, thermally enhanced leadframe with exposed drain pad (pins 1, 2, 3, 4 = Source 1 / Drain 1 / Gate 1 / Source 2; pins 5, 6, 7, 8 = Drain 2 / Gate 2 / NC / NC).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF7751TRPBF uniquely balances ultra-low R_DS(on), dual-channel integration, and minimal footprint - making it optimal for space-limited, high-efficiency dual-path power routing where gate drive capability and thermal density are co-constrained.

Availability

IRF7751TRPBF is available at Aetrix Electronics and suitable for USB-C power delivery modules, battery backup OR-ing circuits, hot-swap interfaces, and low-voltage DC/DC output stages requiring stable component supply and long-term production continuity.

Supply support for IRF7751TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous AEC-Q101 qualification and industrial reliability standards.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-density, high-efficiency power switching in portable, battery-powered, and thermally constrained systems.

FAQ

What is the maximum safe operating area (SOA) for IRF7751TRPBF at 100°C case temperature?

At T_C = 100°C, the device supports up to −2.0 A continuous drain current at −15 V V_DS (single-pulse, 10 ms). The SOA curve in Fig 8 shows operation is limited by R_DS(on) conduction loss above 10 µs pulse width, with peak power dissipation capped at 0.64 W per channel under sustained conditions.

Does IRF7751TRPBF require gate resistors for stable switching in 500 kHz applications?

Yes - a 6.0 Ω gate resistor is specified in the datasheet for switching time measurements (td(on)/td(off)). For 500 kHz operation, a 4.7–10 Ω resistor is recommended to dampen ringing caused by Q_gd/C_iss interaction while maintaining <20 ns rise/fall times per channel.

Can IRF7751TRPBF be used in linear regulation mode?

No - the device is not characterized for linear (triode) region operation. Its Safe Operating Area curves only cover pulsed and continuous switching modes. Linear use risks thermal runaway due to positive R_DS(on) temperature coefficient and insufficient SOA derating below 10 µs.

Is the TSSOP-8 package thermally enhanced, and what is its R_θJA on a 1-inch² copper board?

Yes - the TSSOP-8 uses an exposed drain pad for thermal conduction. With 1 inch² copper board (t < 10 sec), R_θJA is 125°C/W per channel, matching the datasheet's absolute maximum rating table. Layout must connect pins 1, 2, 3, 4, 5 to thermal plane via ≥4 vias for rated performance.