Infineon Technologies IRF7752TRPBF

Overview

IRF7752TRPBF from Infineon Technologies (acquired International Rectifier) is a dual N-channel enhancement-mode HEXFET® Power MOSFET in TSSOP-8 package, designed for high-efficiency load switching in space-constrained battery-powered systems. It delivers 4.6 A continuous drain current at V_GS = 10 V, ultra-low R_DS(on) of 30 mΩ @ 10 V and 36 mΩ @ 4.5 V, and operates across –55 °C to +150 °C junction temperature range - used in portable power management and PCMCIA card power rails.

For engineers reviewing the IRF7752TRPBF datasheet, IRF7752TRPBF pinout, IRF7752TRPBF application, or IRF7752TRPBF equivalent, key selection criteria include its dual-N-channel configuration, TSSOP-8 footprint reduction (45% smaller than SO-8), low-profile height (<1.1 mm), and body diode reverse recovery performance (t_rr = 25 ns, Q_rr = 23 nC) critical for synchronous buck and load-switch designs.

Technical Context

This device integrates two independent N-channel MOSFETs sharing a common source terminal per channel, enabling half-bridge or dual-load configurations without external isolation. Its gate threshold voltage (0.6–2.0 V) supports direct logic-level drive from 3.3 V or 5 V microcontrollers, while the low R_DS(on) and 9.0 nC total gate charge minimize conduction and switching losses in DC-DC converters.

The TSSOP-8 package uses exposed drain pads for thermal enhancement and features optimized internal layout to reduce parasitic inductance - critical for fast-switching applications where dV/dt immunity and EMI control are required. The integrated body diode exhibits 1.3 V forward voltage at 0.91 A and controlled reverse recovery behavior suitable for non-synchronous rectification.

Key Specifications

Pinout & Package

TSSOP-8 package with exposed drain thermal pad (pin 1–4 and 5–8 are source-drain pairs; pins 3 & 4 share common source, pins 7 & 8 share common source). Low-profile (<1.1 mm) and 45% smaller footprint vs. SO-8 enable dense portable PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel load switch applications.

Compared with Si7157DP-T1-GE3 and DMN3028LSD-13, IRF7752TRPBF uniquely balances 30 V rating, TSSOP-8 form factor, and characterized reverse recovery - making it the only option qualified for space-constrained 24 V battery management with synchronous switching requirements.

Availability

IRF7752TRPBF is available at Aetrix Electronics and suitable for USB-C power delivery modules, Li-ion battery protection boards, and PCMCIA card power rails requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF7752TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous industrial qualification standards.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-density, thermally constrained DC-DC conversion and battery load management in portable and industrial electronics.

FAQ

What is the maximum safe operating frequency for IRF7752TRPBF in a synchronous buck converter?

IRF7752TRPBF supports switching up to 1 MHz in practical designs due to its 9.0 nC total gate charge and 25 ns reverse recovery time. At 500 kHz, typical gate drive loss is <15 mW with a 1 Ω driver; above 1 MHz, Miller plateau effects increase turn-off delay, requiring careful gate resistor tuning to avoid shoot-through.

Can IRF7752TRPBF be used in linear regulator mode for precision current limiting?

No - its R_DS(on) variation over temperature (±20% from 25°C to 125°C) and lack of guaranteed safe operating area (SOA) curves for linear operation make it unsuitable for sustained linear-mode use. It is specified only for switching applications with pulsed ID ≤ 37 A and duty cycle ≤ 1%.

Is the exposed thermal pad electrically isolated or internally connected?

The exposed pad is internally connected to both drain terminals (pins 1–2 and 5–6) and must be soldered to a PCB ground or power plane. It is not electrically isolated - using it as a signal reference or floating node will cause short circuits or thermal failure.

Does IRF7752TRPBF require a gate resistor for ESD protection during handling?

No external gate resistor is needed for ESD protection - the device incorporates integrated gate protection diodes rated for ±200 µA leakage at ±12 V. However, a 10 Ω series gate resistor is recommended during PCB layout to dampen ringing and prevent spurious turn-on from PCB trace inductance in high-dV/dt environments.