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Infineon Technologies IRF7754TRPBF
- Part No.:
- IRF7754TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
IRF7754TRPBF.pdf
- Description:
- MOSFET 2P-CH 12V 5.5A 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:6,811
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Product details
Overview
IRF7754TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel TSSOP-8 packaged HEXFET® Power MOSFET rated for -12 V drain-source voltage, 25 mΩ RDS(on) at -4.5 VGS and -5.4 A, with -5.5 A continuous drain current at 25°C. It serves as a low-side load switch in portable power management circuits where board space and thermal efficiency are critical.
For engineers reviewing the IRF7754TRPBF datasheet, IRF7754TRPBF pinout, IRF7754TRPBF application, or IRF7754TRPBF equivalent, key selection criteria include its ultra-low on-resistance at logic-level gate drive, TSSOP-8 footprint reduction versus SO-8, and body diode reverse recovery performance (39–59 ns) in bidirectional current paths.
Technical Context
This device operates as a normally-off enhancement-mode P-channel MOSFET with gate threshold voltage between -0.4 V and -0.9 V, enabling direct interface with 3.3 V or 5 V microcontroller GPIOs. Its forward transconductance of 16 S ensures stable switching behavior under varying load conditions.
The integrated body diode exhibits -1.2 V forward voltage at -1.0 A and 25°C, with reverse recovery charge of 27–41 nC and di/dt = -100 A/µs - critical for synchronous rectification and H-bridge freewheeling paths requiring controlled commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -12 V - maximum blocking voltage for battery-side high-side or low-side switching in 12 V systems |
| RDS(on) | 25 mΩ @ VGS = -4.5 V, ID = -5.4 A - enables <130 mW conduction loss at full rated current |
| ID (25°C) | -5.5 A - continuous drain current capability with standard PCB copper area cooling |
| Qg | 22 nC - total gate charge determining driver strength requirement for 100 kHz+ switching |
| tr/tf | 18–27 ns / 191–287 ns - asymmetric rise/fall times affecting dead-time design in half-bridge configurations |
| Ciss | 1984 pF - input capacitance influencing gate drive loop stability and EMI filtering needs |
| VGS(th) | -0.4 to -0.9 V - low threshold enabling reliable turn-on with 3.3 V logic without level-shifting |
Pinout & Package
TSSOP-8 package: 3.0 mm × 3.0 mm footprint, <1.2 mm profile, exposed drain pad on bottom for thermal enhancement. Pin 1 marked by dot; pins numbered counterclockwise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts -4.5 V logic-level drive for full enhancement |
| 2 (S) | Source | Reference node for gate drive; tied to system ground or positive rail depending on topology |
| 3 (D) | Drain | High-current output; internally connected to exposed pad for thermal dissipation |
| 4 (D) | Drain | Second drain connection; paralleled with Pin 3 to reduce package inductance |
| 5 (D) | Drain | Third drain connection; enhances current sharing and thermal spreading |
| 6 (D) | Drain | Fourth drain connection; completes low-inductance drain path to PCB copper pour |
| 7 (S) | Source | Secondary source terminal; reduces source inductance in high-di/dt switching |
| 8 (S) | Source | Third source terminal; improves gate-to-source loop integrity for stable switching |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 25 mΩ at -4.5 VGS - reduces conduction loss by >35% vs. comparable -12 V P-channel MOSFETs in same package |
| TSSOP-8 footprint | 45% smaller than SO-8 - enables dense layout in space-constrained USB-C PD adapters and wearable battery packs |
| Logic-level gate drive | VGS(th) ≤ -0.9 V - eliminates need for gate driver IC when controlled by 3.3 V MCU GPIO |
| Low-profile height | <1.2 mm - fits within 1.6 mm PCB stackup for PCMCIA and M.2 module designs |
| Lead-free construction | RoHS-compliant, halogen-free - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse polarity and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side main FET controlling battery discharge path; activated only during safe operating conditions. Use Value: 25 mΩ RDS(on) limits voltage drop to <140 mV at 5.5 A, preserving battery runtime and minimizing thermal rise on compact flex PCBs. | Use Scenario: VBUS path switching in dual-role USB-C ports supporting sink/source negotiation. IC Role / Device Role / Timing Role: Bidirectional P-channel switch enabling VBUS routing between port controller and power path. Use Value: Body diode reverse recovery time (39–59 ns) supports clean transitions during role swap without bus glitch or latch-up. |
| Smartphone Backlight Dimming | Industrial Sensor Node Power Gating |
Use Scenario: PWM-controlled LED current regulation in OLED display backlight drivers. IC Role / Device Role / Timing Role: High-frequency (≥100 kHz) low-side switch modulating current through LED string. Use Value: 22 nC total gate charge allows full turn-on/turn-off within 200 ns using 100 Ω gate resistor, minimizing PWM distortion. | Use Scenario: Periodic power cycling of wireless sensor modules to extend battery life beyond 10 years. IC Role / Device Role / Timing Role: Always-on load switch isolating non-critical subsystems during deep-sleep mode. Use Value: -100 nA gate leakage at VGS = -8 V ensures <1 µA standby current, meeting ultra-low-power IoT requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 28 mΩ @ -4.5 VGS; Qg = 20 nC; TSSOP-8 | Slightly higher conduction loss but lower gate charge - better for high-frequency (>500 kHz) PWM | Prefer when switching speed dominates thermal budget |
| DMG1012T-7 | RDS(on) = 32 mΩ @ -4.5 VGS; SOT-23-6; ID = -3.5 A | Smaller package, lower current rating - suitable for sub-3 A portable loads | Choose for cost-sensitive, low-power wearables with minimal board area |
Compared with Si7157DP-T1-GE3 and DMG1012T-7, IRF7754TRPBF delivers the lowest RDS(on) in TSSOP-8 for -12 V systems, making it optimal for thermally constrained 5 A load switches where gate drive simplicity and conduction efficiency are prioritized over extreme switching frequency.
Availability
IRF7754TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, smartphone backlight dimming, and industrial sensor node power gating requiring stable component supply and long-term manufacturability.
Supply support for IRF7754TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET® innovation.
The IRF7754TRPBF belongs to the logic-level P-channel HEXFET® family, designed specifically for compact, high-efficiency DC power switching in portable and space-constrained electronics.
FAQ
What is the maximum junction temperature for continuous operation?
The IRF7754TRPBF has a specified junction temperature range of -55°C to +150°C. For continuous operation under maximum power dissipation, thermal design must ensure junction temperature remains ≤150°C, typically requiring ≤0.64 W power dissipation at 70°C ambient when mounted on standard PCB copper.
Does this MOSFET require a gate resistor for driving from a microcontroller?
A gate resistor is recommended to dampen ringing and limit peak gate current. With 22 nC total gate charge and typical MCU GPIO drive strength (~20 mA), a 10–47 Ω series resistor provides stable turn-on while preventing overshoot and reducing EMI in high-speed switching applications.
Can IRF7754TRPBF be used in synchronous rectification topologies?
Yes - its body diode forward voltage of -1.2 V at -1.0 A and reverse recovery time of 39–59 ns make it suitable for low-voltage synchronous rectification in buck converters and OR-ing circuits, provided gate timing avoids shoot-through and accounts for its asymmetric rise/fall characteristics.
Is the exposed drain pad electrically connected to the drain terminals?
Yes - the exposed pad on the underside of the TSSOP-8 package is internally connected to all drain pins (3, 4, 5, 6). It must be soldered to a large PCB copper pour tied to the drain net to achieve specified thermal resistance (RθJA = 125°C/W) and power handling capability.
IRF7754TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1984pF @ 6V
- Power - Max:
- 1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
IRF7754TRPBF FAQ
1.How can I place an order for IRF7754TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7754TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7754TRPBF reliable?
The price and inventory of IRF7754TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7754TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7754TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7754TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7754TRPBF?
IRF7754TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7754TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7754TRPBF?
For technical support, including IRF7754TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7754TRPBF requirements.
6.How does Aetrix verify that IRF7754TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7754TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7754TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7754TRPBF?
All IRF7754TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7754TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7754TRPBF part is unused and in its original packaging.
Return procedure for IRF7754TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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