Infineon Technologies IRF7757TR

Overview

IRF7757TR from Infineon Technologies is a dual N-channel TSSOP-8 packaged HEXFET® Power MOSFET with common-drain configuration, 20 V V_DS, 35 mΩ R_DS(on) at V_GS = 4.5 V, and 4.8 A continuous drain current at 25°C - designed for compact battery management and load switching in portable electronics.

For engineers reviewing the IRF7757TR datasheet, IRF7757TR pinout, IRF7757TR application, or IRF7757TR equivalent, key selection criteria include its ultra-low on-resistance in a space-constrained TSSOP-8 package, dual-channel common-drain topology, body diode performance (V_SD = 1.2 V), and thermal resistance of 105 °C/W.

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a single TSSOP-8 package with shared drain terminals (pins 5–8), enabling synchronous rectification or complementary half-bridge operation without external interconnects. Its gate threshold voltage (0.6–1.2 V) supports direct logic-level drive from 2.5 V and 3.3 V controllers.

The device features low gate charge (Q_g = 15–23 nC), fast switching (t_d(off) = 36 ns), and optimized capacitance profile (C_iss = 1340 pF, C_rss = 132 pF), making it suitable for high-frequency DC-DC conversion where conduction and switching losses must both be minimized.

Key Specifications

Pinout & Package

TSSOP-8 (MO-153AA), 1.2 mm max height, 45% smaller footprint than SO-8 - optimized for PCMCIA cards and ultra-thin consumer devices.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7157DP-T1-GE3 and DMN3026LSD-13, the IRF7757TR uniquely combines common-drain topology, 35 mΩ on-resistance, and sub-1.2 mm height - delivering optimal trade-off between conduction loss, layout simplicity, and mechanical integration in space-critical battery-powered systems.

Availability

IRF7757TR is available at Aetrix Electronics and suitable for battery protection circuits, USB Type-C power delivery switches, portable SSD power sequencing, and PCMCIA card load switching requiring stable component supply across production lifecycles.

Supply support for IRF7757TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7757TR belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power switching in portable and battery-operated electronics.

FAQ

Is IRF7757TR suitable for 3.3 V logic-level gate drive?

Yes. With a gate threshold voltage range of 0.6–1.2 V and guaranteed R_DS(on) of 35 mΩ at V_GS = 4.5 V, the IRF7757TR fully enhances at 3.3 V - delivering ≤50 mΩ on-resistance and supporting 3.5 A continuous current at 25°C ambient, verified per datasheet Figure 12 and Table 1.

What is the maximum safe operating frequency for IRF7757TR in a synchronous buck converter?

Based on its 9.2 ns rise time, 14 ns fall time, and 36 ns turn-off delay, the IRF7757TR supports stable operation up to 1.2 MHz in well-designed layouts. Thermal limits (0.76 W at 70°C) and gate drive strength (≤23 nC Q_g) define practical upper bound - confirmed by Figure 8 SOA curves and switching loss calculations in Application Note AN-1084.

Can pins 1 and 3 (S1/S2) be shorted externally for parallel operation?

No. Pins 1 and 3 are electrically isolated source terminals. Shorting them externally does not increase current rating and risks thermal imbalance due to mismatched R_DS(on) and layout asymmetry. The device is intended for dual independent switching or common-drain use - not paralleling - as specified in the "Common Drain Configuration" section of the datasheet.

Does IRF7757TR include integrated ESD protection on gate terminals?

No. The IRF7757TR has no built-in gate ESD protection diodes. Gate-to-source voltage must be limited to ±12 V per Absolute Maximum Ratings, and external 10 kΩ series resistors plus TVS clamping are recommended for handling >2 kV HBM events - consistent with standard HEXFET® design practice documented in Infineon's Power MOSFET Application Handbook.