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Infineon Technologies IRF7757TRPBF
- Part No.:
- IRF7757TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
IRF7757TRPBF.pdf
- Description:
- MOSFET 2N-CH 20V 4.8A 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,491
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Product details
Overview
IRF7757TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel TSSOP-8 packaged MOSFET with common-drain configuration, 20 V VDS, 35 mΩ RDS(on) @ 4.5 V VGS, and 4.8 A continuous drain current at 25°C - designed for compact battery management and load switching in portable electronics.
For engineers reviewing the IRF7757TRPBF datasheet, IRF7757TRPBF pinout, IRF7757TRPBF application, or IRF7757TRPBF equivalent, key selection criteria include its ultra-low on-resistance in a space-saving TSSOP-8 footprint (<1.2 mm height), dual-channel common-drain topology, and specified body diode recovery (trr = 20–30 ns).
Technical Context
This device integrates two matched N-channel enhancement-mode MOSFETs in a single TSSOP-8 package with shared drain terminals (pins 5–8), enabling synchronous high-side/low-side or dual-load control without external interconnects. Its gate threshold voltage (0.6–1.2 V) supports direct logic-level drive from 2.5 V and 3.3 V microcontrollers.
The MOSFETs feature low gate charge (Qg = 15–23 nC), fast switching (td(on) = 9.5 ns, tf = 14 ns), and optimized capacitance profile (Ciss = 1340 pF, Crss = 132 pF) for efficient DC-DC converter and power OR-ing applications requiring minimal Miller effect and controlled dv/dt.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for battery-input circuits up to 2-cell Li-ion (8.4 V) with margin. |
| RDS(on) | 35 mΩ @ VGS = 4.5 V - Enables <170 mW conduction loss at 4.8 A, critical for thermally constrained PCBs. |
| ID (25°C) | 4.8 A continuous - Supports dual 2.4 A loads or single high-current path with derating above 70°C. |
| Qg | 15–23 nC - Low gate drive energy reduces controller loading and enables use with low-power GPIOs. |
| trr | 20–30 ns - Fast body diode recovery minimizes shoot-through risk and improves efficiency in bidirectional switching. |
| TJ Range | −55 to +150 °C - Qualified for extended industrial and automotive cabin-temperature environments. |
| RθJA | 105 °C/W - Thermal resistance measured on 1-in² Cu board; requires thermal pad or copper pour for >1 W operation. |
Pinout & Package
TSSOP-8 (JEDEC MO-153AA), 4.4 × 3.0 × 1.1 mm, surface-mount, lead-free, common-drain dual N-channel configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 (S1) | Low-side return path for Channel 1; electrically isolated from S2. |
| 2 | Gate 1 (G1) | Independent gate control input for Channel 1; no internal pull-down. |
| 3 | Source 2 (S2) | Low-side return path for Channel 2; independent of S1. |
| 4 | Gate 2 (G2) | Independent gate control input for Channel 2; fully decoupled from G1. |
| 5–8 | Common Drain (D) | All four drain terminals internally bonded together - forms single high-side output node. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 35 mΩ @ 4.5 V - Reduces I²R losses by >30% vs. comparable SO-8 duals, extending battery runtime. |
| TSSOP-8 footprint | 45% smaller area than SO-8 - Enables dense layout in PCMCIA cards and ultrathin mobile accessories. |
| Common-drain architecture | Single high-side node with dual independent sources/gates - simplifies PCB routing for dual-load OR-ing or redundant supply paths. |
| Logic-level gate drive | VGS(th) = 0.6–1.2 V - Direct interface with 1.8 V, 2.5 V, and 3.3 V MCUs without level-shifting circuitry. |
| Enhanced thermal performance | RθJA = 105 °C/W on standard FR4 - Achieves 1.2 W dissipation at ΔT = 126°C, supporting higher peak currents. |
Applications
| Battery Protection Circuit | USB Power Delivery Switching |
|---|---|
Use Scenario: Dual-MOSFET protection IC controlling charge/discharge paths in 2S Li-ion packs with overcurrent and short-circuit cutoff. IC Role / Device Role / Timing Role: Dual N-channel switch implementing back-to-back configuration for bidirectional blocking and precise current sensing via separate S1/S2. Use Value: Common-drain topology allows single-point high-side connection to pack+ while isolating sense resistors at S1/S2 - eliminating need for floating sense amplifiers. | Use Scenario: USB-C port power path management selecting between host and device power sources with reverse-current blocking. IC Role / Device Role / Timing Role: Dual-channel load switch enabling simultaneous control of VBUS and CC line power paths with independent enable timing. Use Value: Matched RDS(on) and fast trr ensure symmetrical forward/reverse conduction and prevent cross-conduction during hot-plug transitions. |
| PCMCIA Card Power Control | Portable Medical Sensor Hub |
Use Scenario: Hot-swap power sequencing for Type II PCMCIA peripherals with inrush limiting and fault isolation. IC Role / Device Role / Timing Role: Dual N-MOSFET acting as independent 5 V and 3.3 V rail switches with programmable turn-on delay via gate RC networks. Use Value: Ultra-thin 1.1 mm profile fits within PCMCIA mechanical envelope; low Qg enables soft-start using small gate resistors without MCU intervention. | Use Scenario: Multi-sensor data acquisition module powered by coin cell or rechargeable LiPo, requiring low-quiescent-power load switching. IC Role / Device Role / Timing Role: Dual independent load switches enabling selective power gating of BLE radio, ADC, and optical sensor subsystems. Use Value: Sub-1 V VGS(th) ensures reliable turn-on from weakly regulated 2.2 V LDO outputs; low RDS(on) preserves battery capacity across all active states. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 42 mΩ @ 4.5 V; SO-8 package; higher RθJA (125 °C/W); no common-drain pinout. | Requires external drain tie; larger PCB area; less suitable for ultra-thin designs. | Preferred when SO-8 compatibility or higher surge rating (IDM = 24 A) is prioritized over size. |
| DMN3026LSD-13 | RDS(on) = 28 mΩ @ 4.5 V; same TSSOP-8; separate drain pins (no common-drain); higher gate charge (Qg = 28 nC). | Enables independent drain routing but increases layout complexity for OR-ing topologies. | Chosen when channel isolation is required (e.g., differential sensing) and lower on-resistance justifies added gate drive effort. |
Compared with Si7157DP-T1-GE3 and DMN3026LSD-13, the IRF7757TRPBF uniquely combines common-drain integration, sub-1.2 mm height, and 35 mΩ on-resistance - making it optimal for space-constrained, single-node high-side switching where layout simplicity and thermal density matter most.
Availability
IRF7757TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery modules, and PCMCIA card power controllers requiring stable component supply and long-term industrial availability.
Supply support for IRF7757TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.
The HEXFET® Power MOSFET product line - including IRF7757TRPBF - was developed to deliver ultra-low on-resistance in miniature packages for portable, battery-powered, and space-constrained systems.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF7757TRPBF supports 3.9 A continuous drain current at TA = 70°C with VGS = 4.5 V, based on its 0.76 W power dissipation limit and 9.5 mW/°C linear derating factor. This reflects real-world thermal constraints on standard FR4 PCBs without heatsinking.
Can this device be used in a back-to-back configuration for AC blocking?
Yes - the dual independent source terminals (S1, S2) and common drain allow implementation of a back-to-back N-channel configuration for bidirectional blocking. The body diodes are oriented anode-to-anode, enabling full AC path control when both gates are driven synchronously.
Is the TSSOP-8 package compatible with standard reflow profiles?
Yes - the IRF7757TRPBF is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260°C for 30 seconds. Its thermal pad design and solderable terminations support automated assembly on standard SMT lines.
Does the device include integrated ESD protection on gate terminals?
No - the IRF7757TRPBF does not integrate gate ESD protection diodes. External 10 kΩ current-limiting resistors and/or TVS clamps are recommended on G1/G2 lines when exposed to handling or system-level ESD events per IEC 61000-4-2 Level 3.
IRF7757TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.8A
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1340pF @ 15V
- Power - Max:
- 1.2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
IRF7757TRPBF FAQ
1.How can I place an order for IRF7757TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7757TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7757TRPBF reliable?
The price and inventory of IRF7757TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7757TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7757TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7757TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7757TRPBF?
IRF7757TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7757TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7757TRPBF?
For technical support, including IRF7757TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7757TRPBF requirements.
6.How does Aetrix verify that IRF7757TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7757TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7757TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7757TRPBF?
All IRF7757TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7757TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7757TRPBF part is unused and in its original packaging.
Return procedure for IRF7757TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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