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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7805ZTRPBF-1

Name: IRF7805ZTRPBF-1
Brand: Infineon Technologies
SKU: IRF7805ZTRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7805ZTRPBF-1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7805ZTRPBF-1.pdf

Description:: MOSFET N-CH 30V 16A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7805ZTRPBF-1 from Infineon Technologies is a 30 V, 16 A N-channel HEXFET Power MOSFET in SO-8 package, optimized as the synchronous rectifier FET in high-frequency buck converters. It delivers 5.5 mΩ R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and features integrated body diode with 29 ns reverse recovery time for efficient low-side switching in point-of-load applications.

For engineers reviewing the IRF7805ZTRPBF-1 datasheet, IRF7805ZTRPBF-1 pinout, IRF7805ZTRPBF-1 application, or IRF7805ZTRPBF-1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode Q_rr and t_rr, SO-8 thermal performance (R_θJA = 50 °C/W), and avalanche energy rating (72 mJ).

Technical Context

This device operates as the low-side synchronous rectifier in non-isolated DC/DC converters, where its low R_DS(on) minimizes conduction loss while fast switching (t_r = 10 ns, t_f = 3.7 ns) and low Q_gd (6.2 nC) reduce turn-off delay and C_dv/dt-induced shoot-through risk. Its SO-8 package enables dual-source compatibility and surface-mount manufacturability.

The integrated body diode supports freewheeling current during high-side FET off-time, with V_SD ≤ 1.0 V at 12 A and Q_rr = 20–30 nC, directly impacting crossover loss and EMI in 500 kHz–1 MHz buck topologies used in server VRMs and telecom POL modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V input bus and 5 V/3.3 V output rails
R_DS(on) max @ 10 V	6.8 mΩ - Limits conduction loss to ≤0.4 W at 16 A DC, critical for thermal management in compact POL designs
Q_g typ	18 nC - Determines gate drive power loss (P_drive = Q_g × V_GS × f); impacts driver IC selection and layout
t_r/t_f	10 ns / 3.7 ns - Enables clean switching at ≥1 MHz without excessive dV/dt-induced noise or cross-conduction
Q_rr	20–30 nC - Directly contributes to switching loss in high-side FET and affects EMI filtering requirements
R_θJA	50 °C/W - Defines maximum power dissipation (1.6 W at T_A = 70 °C) under standard PCB layout conditions
E_AS	72 mJ - Specifies single-pulse avalanche robustness during transient overvoltage events in unclamped inductive loads

Pinout & Package

IRF7805ZTRPBF-1 uses the industry-standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin numbering follows top-view orientation per JEDEC MS-012.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Seven parallel drain terminals connected to internal die and exposed pad - primary current path and thermal conduction path to PCB
8	Gate (G)	Control terminal for channel modulation; requires low-impedance gate driver due to 1.0–2.1 Ω internal gate resistance
Source (S)	Source (S)	Three source pins (pins 1, 2, 3 on top view diagram) - return path for load current and reference for gate drive

Key Features

Feature	Design Value
SO-8 footprint	Enables drop-in replacement across multiple vendors and simplifies PCB redesign for second-sourcing
R_DS(on) temp coefficient	+0.023 %/°C - Ensures positive temperature coefficient for inherent current sharing in paralleled configurations
Body diode Q_rr	20–30 nC - Reduces reverse recovery loss in synchronous rectification, lowering stress on high-side switch
MSL1 rating	Enables lead-free reflow without moisture sensitivity concerns, supporting industrial and telecom manufacturing standards
RoHS & halogen-free	Complies with EU Directive 2011/65/EU and IEC 61249-2-21, eliminating brominated flame retardants and antimony trioxide

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: 12 V input to 1.8 V/100 A output conversion in rack-mounted servers using multiphase buck architecture.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET operating at 500 kHz–1 MHz with 100 ns dead-time control.

Use Value: 5.5 mΩ R_DS(on) reduces conduction loss by >30% vs. older 10 mΩ devices, enabling higher efficiency at full load without heatsink.

Use Scenario: 48 V to 12 V intermediate bus conversion feeding downstream POL stages in 5G baseband units.

IC Role / Device Role / Timing Role: Secondary-side switch in isolated forward or active-clamp forward topology, handling 20 A continuous current.

Use Value: 29 ns t_rr and low Q_rr minimize body diode conduction loss and associated EMI, easing compliance with EN 55032 Class A.

Industrial PLC Power Supplies

Networking Switch ASIC Core Rails

Use Scenario: 24 V input to 3.3 V/15 A supply for programmable logic controller I/O modules with wide ambient temperature range (-40°C to +85°C).

IC Role / Device Role / Timing Role: Synchronous rectifier in fixed-frequency 300 kHz buck converter with thermally constrained enclosure.

Use Value: Stable R_DS(on) up to 125°C (normalized to 1.6× room-temp value) ensures predictable loss budget across full operating range.

Use Scenario: 12 V to 0.85 V/60 A core supply for multi-core network processors in enterprise switches.

IC Role / Device Role / Timing Role: Low-side FET in 3-phase interleaved buck with 1 MHz per phase and adaptive dead-time control.

Use Value: 6.2 nC Q_gd and 4.7 nC Qgs1 yield low Q_gd/Qgs1 ratio (~1.3), suppressing C_dv/dt turn-on and preventing shoot-through at high dV/dt (>50 V/ns).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 22 nC; SO-8 with enhanced thermal pad	Lower R_DS(on) improves conduction loss but higher Q_g increases drive loss above 1 MHz	Preferred for <1 MHz, high-current POL where thermal margin is limited
IPB050N03LG	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 15.5 nC; TO-263-3 package	Larger package offers lower R_θJA (30 °C/W) but requires PCB redesign and lacks SO-8 compatibility	Selected when board space allows and junction temperature must stay <110°C at 20 A

Compared with SiR872DP-T1-GE3 and IPB050N03LG, IRF7805ZTRPBF-1 balances gate charge, R_DS(on), and package compatibility for cost-sensitive, space-constrained 500 kHz–1 MHz buck converters requiring no layout change.

Availability

IRF7805ZTRPBF-1 is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom point-of-load converters, and industrial PLC power supplies requiring stable component supply and long-term production continuity.

Supply support for IRF7805ZTRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low gate charge and controlled body diode recovery are essential.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7805ZTRPBF-1 supports 12 A continuous drain current at T_A = 70°C with V_GS = 10 V, derated from 16 A at 25°C per the linear derating factor of 0.02 W/°C and R_θJA = 50 °C/W. This assumes standard 1-inch² 2-oz copper pad on FR-4 PCB with no forced airflow.

Does this MOSFET require a gate resistor for stability in 1 MHz operation?

Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by trace inductance interacting with C_iss = 2080 pF and Q_g = 18 nC. Without it, overshoot exceeding V_GS(th) during fast dV/dt transitions may cause unintended turn-on in synchronous buck configurations.

How does the body diode's reverse recovery behavior affect system EMI?

The body diode's t_rr = 29–44 ns and Q_rr = 20–30 nC generate high di/dt during recovery, coupling into adjacent traces and increasing radiated emissions. Layout best practices include minimizing loop area between source, gate, and high-side switch, and adding local RC snubbers across the low-side FET when EMI exceeds CISPR 32 limits.

Is IRF7805ZTRPBF-1 suitable for avalanche-rated operation in unclamped inductive loads?

Yes - it is rated for 72 mJ single-pulse avalanche energy at T_J = 25°C, validated per JEDEC JESD24-1. However, repeated avalanche operation degrades reliability; it should only be used for infrequent transients such as hot-swap surges or startup faults, not as a design feature in normal operation.

IRF7805ZTRPBF-1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2080 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRF7805ZTRPBF-1 FAQ

1.How can I place an order for IRF7805ZTRPBF-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7805ZTRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7805ZTRPBF-1 reliable?

The price and inventory of IRF7805ZTRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7805ZTRPBF-1 is usually 5 days.

3.What payment methods are accepted for IRF7805ZTRPBF-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7805ZTRPBF-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7805ZTRPBF-1?

IRF7805ZTRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7805ZTRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7805ZTRPBF-1?

For technical support, including IRF7805ZTRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7805ZTRPBF-1 requirements.

6.How does Aetrix verify that IRF7805ZTRPBF-1 is sourced from the original manufacturer or authorized distributors?

All IRF7805ZTRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7805ZTRPBF-1 meets industry standards.

7.What is the process for return or replacement of IRF7805ZTRPBF-1?

All IRF7805ZTRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7805ZTRPBF-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7805ZTRPBF-1 part is unused and in its original packaging.

Return procedure for IRF7805ZTRPBF-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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