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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

UMW IRF7807TR

Name: IRF7807TR
Brand: UMW
SKU: IRF7807TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7807TR

Manufacturer:: UMW

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRF7807TR.pdf

Description:: MOSFET N-CH 30V 8.3A 8SOIC

Quantity:: RFQ Add To RFQ list

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Inventory:3,000

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Product details

Overview

IRF7807TR from Infineon Technologies is an N-channel enhancement-mode MOSFET in SO-8 package, rated for 30 V V_DS, 8.3 A continuous drain current at 25°C, 25 mΩ R_DS(on) at V_GS = 4.5 V, and 17 nC total gate charge - optimized as a control FET or synchronous rectifier in mobile DC-DC converters powering 3.3 V and 5 V microprocessor rails.

For engineers reviewing the IRF7807TR datasheet, IRF7807TR pinout, IRF7807TR application, or IRF7807TR equivalent, key selection criteria include verified R_DS(on) vs. temperature behavior, Q_gd/Q_gs1 ratio for C_dV/dt immunity, Q_oss at 16 V, body diode reverse recovery (Q_rr = 80 nC), and SO-8 thermal resistance (R_θJA = 50 °C/W on 1-in² copper).

Technical Context

This MOSFET employs HEXFET® technology with split gate charge architecture: Qgs1 = 2.1 nC (pre-threshold) and Qgs2 = 0.76 nC (post-threshold), enabling precise control of turn-on timing to minimize switching loss in high-frequency buck converters. Its low Q_gd (2.9 nC) and Q_oss (16.8 nC at V_DS = 16 V) directly reduce shoot-through risk and output capacitance-related losses in synchronous topologies.

The device supports dual-role implementation - as control FET (Q1) where Qgs2 and Q_gd dominate switching loss, and as synchronous FET (Q2) where R_DS(on), Q_rr (80 nC), and body diode forward voltage (V_SD = 1.2 V at I_S = 7 A) jointly determine conduction efficiency and cross-conduction margin.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 5 V input rails and transient overshoot in portable DC-DC systems
R_DS(on)	25 mΩ @ V_GS = 4.5 V, I_D = 7 A - enables <170 mW conduction loss at 7 A, critical for thermally constrained mobile PCBs
Q_g	17 nC @ V_GS = 5 V - determines gate driver current demand and switching transition time in 300–1000 kHz converters
Q_oss	16.8 nC @ V_DS = 16 V - defines energy loss per cycle in output capacitance discharge, directly impacting light-load efficiency
Q_rr	80 nC @ dI/dt = 700 A/µs - quantifies body diode reverse recovery charge, affecting cross-conduction loss when used as synchronous FET
R_θJA	50 °C/W - measured on 1-inch² copper board, sets practical power derating limit for SO-8 in unforced-air environments

Pinout & Package

IRF7807TR is housed in a standard SO-8 surface-mount package with exposed drain pads (pins 1–4 and 6–8 are drains; pin 5 is gate; pins 2–3–4 are source terminals). Thermal performance relies on soldering all drain pins to a common copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	High-side switch node connection; electrically tied internally; primary heat path to PCB copper
5	Gate (G)	Control terminal requiring ≤ ±12 V drive; sensitive to C_dV/dt coupling from switching node
2, 3, 4	Source (S)	Low-side reference node; shared with body diode cathode; must be low-inductance for synchronous FET operation

Key Features

Feature	Design Value
Split gate charge (Qgs1/Qgs2)	Qgs1 = 2.1 nC, Qgs2 = 0.76 nC - isolates threshold-crossing charge from current-ramp charge, enabling accurate loss modeling in control FET role
Low Q_gd/Q_gs1 ratio	2.9 nC / 2.1 nC ≈ 1.38 - reduces susceptibility to C_dV/dt induced turn-on during high dv/dt transitions at the switching node
Body diode V_SD	1.2 V @ I_S = 7 A - limits forward conduction loss during dead-time in synchronous rectification
SO-8 thermal design support	R_θJA = 50 °C/W on 1-in² copper - provides validated baseline for thermal simulation and layout verification

Applications

Mobile PC Core Voltage Regulator

USB-C PD Buck Converter

Use Scenario: Step-down conversion from 12 V or 20 V input to 3.3 V or 5 V CPU/GPU core rail in ultrabooks and tablets.

IC Role / Device Role / Timing Role: Dual-role MOSFET serving as both high-side control FET (Q1) and low-side synchronous FET (Q2) in single-phase buck topology.

Use Value: Enables >94% peak efficiency at 5 A load (Vin = 10 V) and simplifies BOM by eliminating separate control/sync FET part numbers.

Use Scenario: Secondary-side 5 V/3 A regulation in USB-C Power Delivery adapters with variable input (5–20 V).

IC Role / Device Role / Timing Role: Synchronous rectifier (Q2) paired with a dedicated controller IC, operating at 500 kHz switching frequency.

Use Value: Q_rr = 80 nC and V_SD = 1.2 V minimize body diode conduction loss during dead-time, improving light-load efficiency over Schottky alternatives.

Industrial IoT Sensor Hub PSU

Automotive Infotainment PMIC

Use Scenario: Compact 3.3 V supply for ARM-based sensor fusion modules in battery-powered edge devices.

IC Role / Device Role / Timing Role: Control FET (Q1) in high-efficiency 2 MHz buck converter with ceramic output capacitor.

Use Value: Low Q_g (17 nC) and fast turn-on delay (12 ns) support stable operation at 2 MHz while maintaining <100 mW switching loss.

Use Scenario: Point-of-load regulation for display backlight drivers and audio codecs in automotive head units (AEC-Q200 ambient).

IC Role / Device Role / Timing Role: Synchronous FET (Q2) in 3.3 V/2 A buck stage, operating across –40°C to +125°C junction range.

Use Value: R_DS(on) remains ≤32 mΩ at T_J = 125°C, ensuring consistent conduction loss without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 20 mΩ @ 4.5 V, Q_g = 22 nC, SO-8, TJ max = 150°C	Higher gate charge increases driver loss; lower R_DS(on) improves conduction but requires re-optimization of Qgs2-sensitive timing	Preferable where conduction loss dominates and gate drive capability allows higher Q_g.
DMN3025LFG-7	R_DS(on) = 25 mΩ @ 4.5 V, Q_g = 14 nC, X1-WLBGA-6, R_θJA = 100 °C/W	Smaller footprint but higher thermal resistance; no integrated drain paralleling; unsuitable for high-current SO-8-replacement layouts	Only suitable for space-constrained designs accepting reduced power handling and thermal margin.

Compared with Si7852DP-T1-GE3 and DMN3025LFG-7, IRF7807TR offers balanced Q_g/R_DS(on) trade-off and validated SO-8 thermal performance - making it optimal for cost-sensitive, medium-power DC-DC designs where layout reuse and thermal predictability are prioritized over minimal R_DS(on) or smallest package.

Availability

IRF7807TR is available at Aetrix Electronics and suitable for mobile PC voltage regulators, USB-C PD secondary-side converters, and industrial IoT sensor hub power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF7807TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and reliability certification across automotive (AEC-Q101), industrial, and consumer segments.

The IRF7807TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space- and thermally-constrained portable electronics.

FAQ

Is IRF7807TR qualified for automotive applications?

No - IRF7807TR is not AEC-Q101 qualified. It is specified for commercial and industrial temperature ranges (–55°C to +150°C), but lacks automotive-grade screening, failure rate reporting, and stress-test validation required for automotive use. For infotainment or body electronics, AEC-Q101 alternatives like IPB80N04S4-03 must be selected.

Can IRF7807TR replace IRF7807A in existing designs?

Yes - IRF7807TR and IRF7807A share identical electrical specifications (V_DS, R_DS(on), Q_g, Q_oss, thermal ratings) and SO-8 packaging. The 'TR' suffix denotes tape-and-reel packaging; 'A' denotes enhanced process consistency. No layout or firmware changes are needed for drop-in replacement.

What is the maximum recommended switching frequency for IRF7807TR?

Based on its 17 nC Q_g, 2.9 nC Q_gd, and 5.2 nC Q_sw, IRF7807TR is optimized for 300 kHz to 1 MHz operation. At 2 MHz, gate drive loss and switching loss rise significantly; efficiency drops >3% versus 500 kHz under identical conditions, as confirmed in Infineon's 5 V supply reference test data.

Does IRF7807TR include an integrated Schottky diode?

No - IRF7807TR uses a standard silicon body diode with V_SD = 1.2 V and Q_rr = 80 nC. It does not integrate a parallel Schottky; however, its Q_rr(s) = 50 nC is specified with external 10BQ040 Schottky, indicating compatibility with discrete Schottky-assisted layouts for ultra-low Q_rr operation.

IRF7807TR Specifications

Product attributes: Attribute value

Manufacturer:: UMW

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRF7807TR FAQ

1.How can I place an order for IRF7807TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7807TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7807TR reliable?

The price and inventory of IRF7807TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7807TR is usually 5 days.

3.What payment methods are accepted for IRF7807TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7807TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7807TR?

IRF7807TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7807TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7807TR?

For technical support, including IRF7807TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7807TR requirements.

6.How does Aetrix verify that IRF7807TR is sourced from the original manufacturer or authorized distributors?

All IRF7807TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7807TR meets industry standards.

7.What is the process for return or replacement of IRF7807TR?

All IRF7807TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7807TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7807TR part is unused and in its original packaging.

Return procedure for IRF7807TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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