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Infineon Technologies IRF7809AVTRPBF-1
- Part No.:
- IRF7809AVTRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7809AVTRPBF-1.pdf
- Description:
- MOSFET N-CH 30V 13.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,968
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Product details
Overview
IRF7809AVTRPBF-1 from Infineon Technologies (formerly International Rectifier) is a 30 V, 13.3 A N-channel HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter high-side and low-side switching with 7.0 mΩ RDS(on) at VGS = 4.5 V, 41 nC total gate charge, and 100 A pulsed drain current - deployed in DC-DC power stages for notebook CPU core voltage regulation.
For engineers reviewing the IRF7809AVTRPBF-1 datasheet, IRF7809AVTRPBF-1 pinout, IRF7809AVTRPBF-1 application, or IRF7809AVTRPBF-1 equivalent, key selection criteria include verified RDS(on) at 4.5 V, SO-8 thermal resistance (RθJA = 50 °C/W), body diode reverse recovery charge (Qrr = 120 nC), and industrial-grade MSL1 qualification for reflow compatibility.
Technical Context
This MOSFET employs planar silicon HEXFET architecture with optimized channel geometry to achieve low on-resistance while maintaining robust avalanche capability (EAS = 400 mJ at ID = 6.7 A). Its gate threshold voltage (VGS(th) = 1.0 V min) enables direct drive from 3.3 V or 5 V controllers without level shifting.
The device integrates a fast-recovery body diode with Qrr = 120 nC and trr < 50 ns under di/dt ≈ 700 A/μs, supporting high-frequency synchronous rectification. Thermal design leverages SO-8's RθJL = 20 °C/W to PCB copper, enabling 3.0 W power dissipation at TL = 90 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margin in point-of-load converters |
| RDS(on) | 7.0 mΩ @ VGS = 4.5 V - Enables <1.5 W conduction loss at 15 A continuous, critical for thermally constrained laptop VRMs |
| QG | 41 nC - Determines gate driver current requirement (~2 A peak for 20 ns turn-on with 5 V swing) |
| Qrr | 120 nC - Quantifies body diode recovery loss during hard-switched transitions in non-synchronous topologies |
| RθJA | 50 °C/W - Defines junction-to-ambient thermal rise on standard 1-inch² FR4 board, limiting usable power at ambient temperature |
| ID (cont) | 13.3 A @ TA = 25 °C - Continuous current rating under natural convection, derated to 14.6 A at TL = 90 °C on copper pad |
| TJ range | –55 to 150 °C - Industrial temperature grade supports operation in automotive cabin and industrial control enclosures |
Pinout & Package
IRF7809AVTRPBF-1 uses JEDEC-standard SO-8 package (MS-012AA), 4.9 mm × 6.0 mm footprint, 1.75 mm height, with exposed drain paddle for thermal enhancement. Pin 1 is bottom-left corner (marking dot adjacent), leads are gull-wing, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤±12 V drive; 1.5 Ω gate resistance limits ringing and EMI |
| 2 (S) | Source | Reference node for gate drive; tied to power ground in low-side configuration |
| 3 (S) | Source | Parallel source connection for reduced package inductance and improved current sharing |
| 4 (S) | Source | Third source bond for minimized source loop inductance in high-dI/dt applications |
| 5 (D) | Drain | Main power output; connected to exposed paddle for thermal path to PCB copper |
| 6 (D) | Drain | Second drain bond; shares current with Pin 5 and paddle to reduce RDS(on) contribution |
| 7 (D) | Drain | Third drain bond; ensures uniform current distribution across SO-8 drain terminals |
| 8 (D) | Drain | Fourth drain bond; maximizes copper area utilization for thermal and electrical performance |
Key Features
| Feature | Design Value |
|---|---|
| Industry-standard SO-8 pinout | Enables drop-in replacement across multiple vendors without PCB redesign |
| MSL1 moisture sensitivity | Eliminates bake requirements before reflow, reducing manufacturing cycle time and cost |
| Body diode Qrr = 120 nC | Reduces switching loss in non-synchronous buck converters versus generic MOSFETs with >200 nC Qrr |
| RDS(on) = 7.0 mΩ @ 4.5 V | Supports direct interface with 3.3 V PWM controllers, removing need for gate driver ICs |
| 150 °C max junction temperature | Allows operation in sealed enclosures with limited airflow, such as embedded computing modules |
Applications
| Server VRM High-Side Switch | Notebook CPU Core Regulator |
|---|---|
Use Scenario: High-current, high-frequency (300–600 kHz) synchronous buck stage delivering up to 45 A to dual-socket Xeon processors. IC Role / Device Role: High-side switch handling 12 V input, switching at 50% duty cycle with 15 A RMS current. Use Value: 7.0 mΩ RDS(on) minimizes conduction loss (<1.6 W), while 41 nC QG enables efficient 500 kHz switching with low gate drive loss. | Use Scenario: Compact 2-phase core regulator powering Intel Core i7 CPUs in ultrabooks with strict thermal envelope. IC Role / Device Role: Low-side synchronous rectifier operating with 1–2 V output, 20 A peak per phase. Use Value: Fast body diode (Qrr = 120 nC) reduces shoot-through risk and improves light-load efficiency versus discrete Schottky solutions. |
| Industrial PLC Power Module | Automotive Infotainment DC-DC Stage |
Use Scenario: 24 V input to 5 V/3.3 V conversion in programmable logic controller backplane with –40 to 85 °C ambient. IC Role / Device Role: Primary switch in isolated flyback or non-isolated buck converter supplying auxiliary rails. Use Value: Industrial qualification (JEDEC JESD47F) and 150 °C TJ ensure reliability across extended temperature cycling and vibration environments. | Use Scenario: 12 V battery input to 1.2 V GPU core supply in automotive head unit with load dump immunity. IC Role / Device Role: High-side FET in multiphase buck converter subjected to ISO 7637-2 pulse 5a transients. Use Value: 30 V VDS rating provides 2× margin over 14 V nominal battery, while 400 mJ EAS withstands unclamped inductive energy during fault events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7807ZTRPBF | RDS(on) = 5.9 mΩ @ 4.5 V; QG = 45 nC; VDS = 30 V | Lower on-resistance but higher gate charge increases driver loss at >300 kHz | Preferred for lower conduction loss in thermally limited 200–300 kHz designs where gate drive capability is sufficient |
| Si7852DP-T1-GE3 | RDS(on) = 6.2 mΩ @ 4.5 V; Qrr = 95 nC; SO-8, RoHS | Superior body diode recovery (20% lower Qrr) but 10% higher RDS(on) than IRF7809AVTRPBF-1 | Better suited for hard-switched non-synchronous topologies requiring minimal reverse recovery loss |
Compared with IRF7809AVTRPBF-1, IRF7807ZTRPBF trades higher switching loss for lower conduction loss, while Si7852DP-T1-GE3 offers faster body diode recovery at modest RDS(on) penalty - making each optimal for distinct trade-offs in VRM efficiency vs. EMI vs. thermal design.
Availability
IRF7809AVTRPBF-1 is available at Aetrix Electronics and suitable for server VRMs, notebook CPU regulators, industrial PLC power modules, and automotive infotainment DC-DC stages requiring stable component supply and industrial-qualified MOSFETs.
Supply support for IRF7809AVTRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.
This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-density DC-DC conversion in computing and industrial power supplies where low RDS(on), fast switching, and ruggedness are essential.
FAQ
What is the maximum safe operating frequency for IRF7809AVTRPBF-1 in a synchronous buck converter?
Based on its 41 nC gate charge and 14 ns turn-on delay, IRF7809AVTRPBF-1 supports reliable operation up to 1 MHz in well-designed layouts with low-inductance gate loops and adequate gate drive strength (>2 A peak). At 500 kHz, typical switching loss remains below 0.8 W with 12 V input and 15 A load, assuming optimized dead-time control to avoid shoot-through.
Does IRF7809AVTRPBF-1 require a gate resistor for stability?
Yes - a 5–10 Ω series gate resistor is recommended to dampen parasitic oscillation caused by layout inductance interacting with the device's 1.5 Ω intrinsic gate resistance and 3780 pF Ciss. Without it, ringing exceeding ±15 V can occur during fast edge transitions, risking gate oxide damage or false turn-on in high-noise environments.
Can IRF7809AVTRPBF-1 be used in linear regulator applications?
No - this MOSFET is not characterized or rated for linear-mode (constant-current, variable-VDS) operation. Its Safe Operating Area (SOA) curve shows only single-pulse capability up to 100 A at VDS < 10 V, with no DC or repetitive pulse ratings beyond 3.0 W at TL = 90 °C. Linear use risks thermal runaway due to positive temperature coefficient of RDS(on).
How does the body diode performance compare to an external Schottky diode in synchronous rectification?
The integrated body diode has VSD = 1.3 V at 15 A and Qrr = 120 nC, which is slower and higher forward drop than a 40 V, 15 A Schottky (e.g., RB055LAM-40: VF ≈ 0.5 V, Qrr ≈ 15 nC). However, in synchronous buck topologies, the body diode conducts only during dead-time; its recovery is managed by the complementary FET, making discrete Schottky unnecessary and saving board space.
IRF7809AVTRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3780 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
IRF7809AVTRPBF-1 FAQ
1.How can I place an order for IRF7809AVTRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7809AVTRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7809AVTRPBF-1 reliable?
The price and inventory of IRF7809AVTRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7809AVTRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRF7809AVTRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7809AVTRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7809AVTRPBF-1?
IRF7809AVTRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7809AVTRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7809AVTRPBF-1?
For technical support, including IRF7809AVTRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7809AVTRPBF-1 requirements.
6.How does Aetrix verify that IRF7809AVTRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRF7809AVTRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7809AVTRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRF7809AVTRPBF-1?
All IRF7809AVTRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7809AVTRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7809AVTRPBF-1 part is unused and in its original packaging.
Return procedure for IRF7809AVTRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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