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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7821TRPBF-1

Name: IRF7821TRPBF-1
Brand: Infineon Technologies
SKU: IRF7821TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7821TRPBF-1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7821TRPBF-1.pdf

Description:: MOSFET N-CH 30V 13.6A 8SO

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Product details

Overview

IRF7821TRPBF-1 from Infineon Technologies is a 30 V, 13.6 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as synchronous rectifier FET in high-frequency buck converters. It features 9.1 mΩ R_DS(on) at V_GS = 10 V, 9.3 nC total gate charge, and integrated body diode with 28–42 ns reverse recovery time, deployed in point-of-load power stages for networking and computing systems.

For engineers reviewing the IRF7821TRPBF-1 datasheet, IRF7821TRPBF-1 pinout, IRF7821TRPBF-1 application, or IRF7821TRPBF-1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_gd/Q_gs1 ratio for C_dV/dt immunity, body diode Q_rr (23–35 nC), and SO-8 thermal resistance (R_θJA = 50 °C/W).

Technical Context

This MOSFET operates as a low-side synchronous rectifier in non-isolated DC/DC converters, where its fast switching (t_d(on) = 6.3 ns, t_f = 7.3 ns) and low output charge (Q_oss = 6.1 nC) minimize turn-off loss and voltage overshoot. Its gate threshold voltage (V_GS(th) = 1.0–2.6 V) enables robust 4.5 V logic-level drive compatibility.

The device integrates a planar silicon HEXFET structure with optimized charge distribution: Q_gd = 2.9 nC and Q_gs2 = 0.8 nC ensure controlled Miller plateau behavior, while R_DS(on) exhibits only 2.0× increase from 25°C to 150°C - critical for thermally constrained PoL designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 12 V and 24 V input rails with margin for transient spikes
R_DS(on) max @ V_GS = 10 V	9.1 mΩ - determines conduction loss at 13.6 A continuous drain current
Q_g typical	9.3 nC - defines gate drive energy and switching speed at 1 MHz operation
Q_rr	23–35 nC - directly impacts shoot-through risk and loss transfer to high-side FET
R_θJA	50 °C/W - sets maximum power dissipation limit (1.6 W at T_A = 70°C)
V_GS(th)	1.0–2.6 V - ensures reliable turn-on with 3.3 V or 4.5 V PWM controller outputs
C_iss	1010 pF - influences gate drive loop stability and EMI filtering requirements

Pinout & Package

IRF7821TRPBF-1 uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad for enhanced thermal performance. Pin 1–8 are arranged in dual-row configuration with pins 1–4 on left side and 5–8 on right side (top view).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally paralleled terminals connected to exposed copper pad - primary current path and thermal conduction path to PCB
5	Gate (G)	Control terminal requiring <9.3 nC charge to switch; sensitive to C_dV/dt coupling from switching node
6	Source (S)	Reference node for gate drive and current sensing; tied to power ground plane in synchronous buck layout

Key Features

Feature	Design Value
SO-8 footprint with exposed drain	Enables multi-vendor sourcing and standard reflow assembly while delivering 20 °C/W junction-to-lead thermal path
Low Q_gd/Q_gs1 ratio	2.9 nC / 2.5 nC ≈ 1.16 - reduces susceptibility to false turn-on during high dV/dt transitions at switch node
Body diode with 28–42 ns t_rr	Minimizes reverse recovery tail current, lowering stress on high-side FET and reducing EMI generation
RoHS-compliant, halogen-free	Meets IPC-J-STD-609A Class 1 material declaration and industrial environmental compliance requirements

Applications

Server VRM Power Stage

Network Switch PoL Converter

Use Scenario: 12 V input to 0.8–1.8 V output conversion for CPU/GPU core supplies in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500 kHz–1 MHz, commutated by dedicated multiphase controller.

Use Value: 9.1 mΩ R_DS(on) and 6.1 nC Q_oss reduce conduction and turn-off losses, enabling >92% efficiency at 100 A load per phase.

Use Scenario: Point-of-load regulation for ASIC/FPGA I/O banks and SerDes supplies in 10/25/100 GbE switches.

IC Role / Device Role / Timing Role: Secondary-side FET in interleaved buck stage, synchronized to avoid shoot-through with precise dead-time control.

Use Value: 23–35 nC Q_rr and 1.0 V V_SD minimize body diode conduction loss during dead time, improving light-load efficiency.

Industrial PLC Power Module

Edge AI Accelerator Board

Use Scenario: Compact 24 V to 3.3/5 V/12 V multi-rail supply in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated or non-isolated buck converters powering microcontrollers, I/O drivers, and communication interfaces.

Use Value: MSL1 rating and -55°C to +155°C T_STG support extended industrial temperature operation without derating.

Use Scenario: High-density power delivery for heterogeneous AI accelerators with dynamic voltage scaling (DVS) and rapid load transients.

IC Role / Device Role / Timing Role: Fast-switching low-side FET in adaptive frequency buck converter, responding to real-time current demand signals.

Use Value: 6.3 ns t_d(on) and 7.3 ns t_f enable sub-100 ns switching cycles, maintaining regulation under 10 A/μs load steps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832TRPBF	R_DS(on) = 5.8 mΩ @ 10 V (lower), Q_g = 14.5 nC (higher), V_DS = 30 V same	Better conduction loss but higher gate drive loss and slower switching (t_f = 11 ns)	Prefer when thermal headroom is limited and switching frequency ≤300 kHz
SiR872DP-T1-GE3	R_DS(on) = 7.0 mΩ @ 10 V, Q_g = 10.5 nC, SO-8 with enhanced thermal pad (R_θJA = 40 °C/W)	Lower thermal resistance improves power density; Q_rr = 28 nC similar	Choose for space-constrained boards needing higher continuous current at elevated ambient

Compared with IRF7821TRPBF-1, IRF7832TRPBF trades higher switching loss for lower conduction loss, while SiR872DP-T1-GE3 offers superior thermal performance and balanced charge metrics - both require layout review for gate drive strength and source inductance due to differing Q_gd values.

Availability

IRF7821TRPBF-1 is available at Aetrix Electronics and suitable for server VRM power stages, network switch PoL converters, and industrial PLC power modules requiring stable component supply and long-term manufacturability.

Supply support for IRF7821TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency, high-frequency DC/DC conversion with emphasis on low R_DS(on), fast switching, and robust avalanche capability for computing and communications infrastructure.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7821TRPBF-1 supports 11 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² 2 oz Cu, 2-layer board). This rating assumes SO-8 package mounted on standard JEDEC test board per JESD51-7, and accounts for linear derating of 0.02 W/°C above 25°C ambient.

Does this MOSFET require a gate resistor for safe operation in 1 MHz buck converters?

Yes - a 2.2–4.7 Ω gate resistor is recommended to dampen ringing caused by gate loop inductance and C_iss/C_gd interaction. The 9.3 nC Q_g and 2.9 nC Q_gd make it susceptible to parasitic oscillation without controlled turn-on slew rate, especially when driven by high-speed controllers like MP2960 or ISL95815.

Can IRF7821TRPBF-1 be used as a high-side switch in a floating-gate configuration?

No - it is not rated for high-side bootstrap operation due to insufficient V_GS rating (±20 V max) and lack of integrated level-shifting circuitry. Its gate oxide is optimized for referenced-source drive; using it high-side requires external isolated gate driver and careful bootstrap capacitor sizing to maintain V_GS > 8 V across duty cycle extremes.

How does the body diode's reverse recovery charge affect system efficiency?

The 23–35 nC Q_rr causes temporary short-circuit current during dead time, dissipating energy primarily in the high-side FET. In 500 kHz converters with 10 A load, this adds ~0.3 W loss per phase - mitigated by selecting FETs with matched Q_rr and minimizing dead time via precise timing control.

IRF7821TRPBF-1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRF7821TRPBF-1 FAQ

1.How can I place an order for IRF7821TRPBF-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7821TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7821TRPBF-1 reliable?

The price and inventory of IRF7821TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7821TRPBF-1 is usually 5 days.

3.What payment methods are accepted for IRF7821TRPBF-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7821TRPBF-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7821TRPBF-1?

IRF7821TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7821TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7821TRPBF-1?

For technical support, including IRF7821TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7821TRPBF-1 requirements.

6.How does Aetrix verify that IRF7821TRPBF-1 is sourced from the original manufacturer or authorized distributors?

All IRF7821TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7821TRPBF-1 meets industry standards.

7.What is the process for return or replacement of IRF7821TRPBF-1?

All IRF7821TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7821TRPBF-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7821TRPBF-1 part is unused and in its original packaging.

Return procedure for IRF7821TRPBF-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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