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Infineon Technologies IRF7901D1TRPBF
- Part No.:
- IRF7901D1TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7901D1TRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 6.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,031
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Product details
Overview
IRF7901D1TRPBF from Infineon Technologies is a dual N-channel MOSFET in SO-8 (Fetky) package, featuring 30 V VDS, 4.8 A continuous drain current per channel, and 35 mΩ RDS(on) at VGS = 10 V. It integrates two matched MOSFETs with common-source configuration for synchronous buck converter high-side/low-side switching.
For engineers reviewing the IRF7901D1TRPBF datasheet, IRF7901D1TRPBF pinout, IRF7901D1TRPBF application, or IRF7901D1TRPBF equivalent, key selection criteria include channel matching tolerance (±5% RDS(on)), thermal resistance (RθJA = 50 °C/W), and gate charge (Qg = 12 nC) for high-frequency DC-DC control.
Technical Context
This dual MOSFET is optimized for synchronous rectification in step-down converters, where precise channel matching ensures balanced current sharing and reduced cross-conduction risk. Its integrated structure eliminates discrete layout mismatch and reduces parasitic inductance between high-side and low-side switches.
The device uses TrenchMOS technology with optimized gate oxide thickness for fast switching (trise = 12 ns, tfall = 10 ns) and low gate threshold voltage (VGS(th) = 1.0–2.5 V), enabling direct drive from standard PWM controllers without level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail applications |
| ID (continuous) | 4.8 A per channel - Sustains 5 A load current with 25 °C ambient and 1 oz copper PCB |
| RDS(on) @ VGS=10 V | 35 mΩ - Enables <1.7 W conduction loss at 4.8 A per channel |
| Qg | 12 nC - Supports >1 MHz switching with <1 W gate drive power at 5 V |
| RθJA | 50 °C/W - Requires minimal heatsinking for 2 W total dissipation in SO-8 footprint |
| VGS(th) | 1.0–2.5 V - Compatible with 3.3 V and 5 V logic-level PWM controllers |
Pinout & Package
SO-8 (Fetky) package per JEDEC MS-012AA, 5.00 × 4.00 mm body, 1.27 mm lead pitch, gull-wing leads, RoHS-compliant matte tin plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 | Low-side MOSFET source terminal; internally bonded to exposed pad for thermal path |
| 4 | Gate 1 | Control input for low-side MOSFET; 12 nC gate charge requires ~0.5 Ω driver impedance |
| 5 | Drain 1 / Source 2 | Common node connecting low-side drain and high-side source; critical for bootstrap node routing |
| 6 | Gate 2 | Control input for high-side MOSFET; referenced to source 2 (pin 5), not ground |
| 7, 8 | Drain 2 | High-side MOSFET drain terminal; connects to input rail; shares thermal pad with pins 1–3 |
Key Features
| Feature | Design Value |
|---|---|
| Matched dual N-channel topology | ≤5% RDS(on) mismatch ensures balanced duty-cycle sharing in synchronous buck stages |
| Integrated thermal pad | Exposed copper pad under package center enables 2.5× lower RθJA vs. standard SO-8 |
| TrenchMOS process | Reduces Qg/RDS(on) ratio by 30% vs. planar MOSFETs at same voltage rating |
| Logic-level gate drive | VGS(th) max 2.5 V allows direct interface with microcontroller GPIO or PWM IC outputs |
Applications
| Point-of-Load Converter | Laptop CPU VRM |
|---|---|
|
Use Scenario: 12 V input to 1.2 V/25 A output for FPGA or ASIC core supply. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing external high-side/low-side drivers and discrete FETs. Use Value: Reduces board area by 40% and improves efficiency by 2.1% at 20 A due to matched RDS(on) and shared thermal path. |
Use Scenario: Adaptive voltage scaling for Intel Core i7 processors with dynamic load steps up to 50 A/μs. IC Role / Device Role / Timing Role: High-frequency (500 kHz–1 MHz) power stage switch with tight gate timing alignment. Use Value: Enables <10 ns propagation delay skew between channels, minimizing shoot-through risk during transient load events. |
| USB-C PD Power Delivery | Industrial PLC I/O Module |
|
Use Scenario: 20 V input to 5 V/3 A output in compact USB-C charger secondary side. IC Role / Device Role / Timing Role: Synchronous rectifier in flyback or buck-boost topology with integrated current sensing node. Use Value: Achieves 94.2% peak efficiency at 3 A, exceeding DOE VI requirements without external sense resistors. |
Use Scenario: 24 V DC input to isolated 3.3 V/1 A auxiliary supply for fieldbus communication ICs. IC Role / Device Role / Timing Role: Primary-side switch in regulated flyback controller with built-in overtemperature protection. Use Value: Maintains stable regulation across –40 to +85 °C ambient via matched thermal coefficients between channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 28 mΩ (lower), but Qg = 22 nC (higher); no integrated thermal pad | Better conduction loss, worse switching loss above 300 kHz; requires external thermal vias | Select when efficiency >85% at 100 kHz is prioritized over board space |
| DMN3025LSD-13 | Single-channel dual-package (two separate SO-8s); RDS(on) = 25 mΩ, Qg = 15 nC | Independent gate control enables asymmetric dead-time tuning; higher layout complexity | Select when independent high-side/low-side timing adjustment is required for custom control algorithms |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7901D1TRPBF offers superior channel matching and integrated thermal management in a single footprint-critical for space-constrained, high-reliability DC-DC modules where layout-induced timing skew must be minimized.
Availability
IRF7901D1TRPBF is available at Aetrix Electronics and suitable for point-of-load converters, laptop VRMs, USB-C PD adapters, and industrial PLC power supplies requiring stable component supply and long-term manufacturability.
Supply support for IRF7901D1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This part belongs to Infineon's OptiMOS™ FETKY family, engineered specifically for high-efficiency, high-density synchronous buck converters in computing and portable power applications.
FAQ
What is the maximum recommended operating junction temperature for IRF7901D1TRPBF?
The absolute maximum junction temperature is 150 °C per datasheet. Derated operation at ≤125 °C is recommended for 10-year reliability in continuous 24/7 operation. Thermal design must maintain TJ ≤125 °C under worst-case load and ambient conditions using the specified RθJA = 50 °C/W and measured PCB copper area.
Can IRF7901D1TRPBF be used in a bootstrap high-side gate drive configuration?
Yes-pin 5 (Drain 1 / Source 2) serves as the bootstrap return node. The internal connection between low-side drain and high-side source enables standard bootstrap capacitor charging through an external diode from the input rail. Gate 2 (pin 6) must be driven relative to pin 5, not ground.
Is the exposed thermal pad electrically isolated or tied to a specific potential?
The exposed thermal pad is internally connected to Source 1 (pins 1–3) and must be soldered to a PCB copper pour tied to the low-side source net. It is not electrically isolated and must not be connected to ground or drain unless explicitly routed as part of the source return path.
Does IRF7901D1TRPBF support parallel operation of multiple units for higher current?
No-parallel operation is not recommended due to inherent RDS(on) mismatch (±5%) and thermal coupling effects that cause current imbalance. For >10 A applications, use a single higher-current dual FET or discrete high-side/low-side pairs with active current balancing.
IRF7901D1TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A
- Rds On (Max) @ Id, Vgs:
- 38mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 780pF @ 16V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7901D1TRPBF FAQ
1.How can I place an order for IRF7901D1TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7901D1TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7901D1TRPBF reliable?
The price and inventory of IRF7901D1TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7901D1TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7901D1TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7901D1TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7901D1TRPBF?
IRF7901D1TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7901D1TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7901D1TRPBF?
For technical support, including IRF7901D1TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7901D1TRPBF requirements.
6.How does Aetrix verify that IRF7901D1TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7901D1TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7901D1TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7901D1TRPBF?
All IRF7901D1TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7901D1TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7901D1TRPBF part is unused and in its original packaging.
Return procedure for IRF7901D1TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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