Infineon Technologies IRF7902PBF

Overview

IRF7902PBF from Infineon (formerly International Rectifier) is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, configured as a matched control/synchronous pair for high-efficiency DC-DC conversion. It delivers R_DS(on) of 22.6 mΩ (Q1) and 14.4 mΩ (Q2) at V_GS = 10 V, supports 6.4 A and 9.7 A continuous drain current respectively, and features fully characterized avalanche capability - used in point-of-load converters for notebook computers and graphics cards.

For engineers reviewing the IRF7902PBF datasheet, IRF7902PBF pinout, IRF7902PBF application, or IRF7902PBF equivalent, key selection criteria include dual-channel R_DS(on) mismatch tolerance, gate charge asymmetry (Q_g = 4.6/6.5 nC), body diode reverse recovery time (t_rr = 7.8–18 ns), thermal resistance (R_θJA = 90/62.5 °C/W), and SO-8 lead-free compliance.

Technical Context

This dual MOSFET integrates two discrete N-channel silicon power transistors in a single SO-8 footprint: Q1 serves as the high-side control FET with higher R_DS(on) and lower gate charge; Q2 acts as the low-side synchronous rectifier with lower R_DS(on) and higher current rating. Both share identical gate threshold voltage (1.35–2.25 V) and temperature coefficient (−4.7/−5.9 mV/°C).

It operates under clamped inductive switching conditions with validated single-pulse avalanche energy ratings (3.4 mJ for Q1, 7.3 mJ for Q2) and exhibits tightly coupled thermal behavior via shared die attach in the SO-8 package - enabling precise timing alignment in synchronous buck topologies without external dead-time tuning.

Key Specifications

Pinout & Package

IRF7902PBF uses a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin numbering follows JEDEC MS-012AC, with pins 1–4 assigned to Q1 and pins 5–8 to Q2 - both channels share common source connections internally tied to pins 4 and 5 (source-source shorted).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN6016LSD-13, IRF7902PBF offers superior avalanche robustness and faster body diode recovery - critical for high-frequency, high-reliability POL converters where fault immunity and EMI control are prioritized over marginal R_DS(on) reduction.

Availability

IRF7902PBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, GPU power delivery modules, and server memory regulators requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF7902PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's power MOSFET innovation.

The IRF7902PBF belongs to the HEXFET® dual MOSFET product line, engineered specifically for high-efficiency, high-density synchronous buck converters in portable and computing power systems.

FAQ

What is the maximum safe operating frequency for IRF7902PBF in a synchronous buck converter?

IRF7902PBF supports switching frequencies up to 1.2 MHz in well-cooled, optimized layouts. Its low Q_g (4.6/6.5 nC), fast t_r/t_f (8.2/8.6 ns and 3.4/3.3 ns), and tight C_iss/C_oss ratio enable efficient operation at 1 MHz with minimal gate drive loss - verified in reference designs for Intel VR12/VR13 compliant notebooks.

Can IRF7902PBF be used in a single-FET configuration (e.g., high-side only)?

Yes - each channel operates independently. Q1 (pins 1–4) or Q2 (pins 5–8) can be used alone, provided source connections are properly isolated. However, the internal source tie (pin 4–5) must be severed or left floating if only one channel is utilized, as default bonding connects both sources - confirmed in IRF's SO-8 dual-die layout diagram (Fig. 27).

Does IRF7902PBF require special PCB layout considerations for thermal management?

Yes - the exposed drain pad (pin 8) must be soldered to ≥250 mm² of 2-oz copper with ≥4 thermal vias (0.3 mm diameter) to inner ground planes. Without this, R_θJA degrades beyond 90/62.5 °C/W, risking thermal runaway at >1.0 W/channel - validated in Infineon's AN-1084 thermal application note.

How does the body diode performance compare between Q1 and Q2?

Q2's body diode has lower forward voltage (V_SD = 1.0 V typ at 7.8 A) and faster reverse recovery (t_rr = 12 ns max vs. 7.8 ns for Q1), making it better suited for synchronous rectification. Q1's diode is optimized for controlled turn-off in high-side position - reflected in its higher E_AS margin and lower I_AR rating (5.1 A vs. 7.8 A).